• 공업화학
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• 제34권2호
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• pp.170-174
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• 2023

CO₂는 지구온난화의 원인 중 하나로 알려져 있으며 포집을 위하여 다양한 연구가 진행되고 있다. 본 연구에서는 표면특성 변화를 통하여 활성탄소의 CO₂ 흡착 능력을 향상시키고자 사불화탄소 플라즈마 반응을 진행하였으며, 반응 시간에 따른 흡착 특성을 고찰하였다. 플라즈마 반응 이후 활성탄소의 미세기공 부피가 모두 늘어났으며, 최대 1.03 cm³/g까지 증가하였다. 또한 반응 시간의 증가에 따라 활성탄소 표면에 존재하는 불소 함량이 0.88%까지 증가하였다. 결과적으로 본 실험을 통하여 활성탄소의 기공 특성과 표면 작용기를 동시에 조절할 수 있었다. 본 연구에서 표면처리된 활성탄소의 CO₂ 흡착량은 미처리 활성탄소에 비하여 최대 7.44%까지 향상되어, 반응 시간이 60 s일 때 3.90 mmol/g으로 가장 우수한 성능을 보였다. 이는 활성탄소 표면에 도입된 불소 작용기와 식각 효과에 의하여 증가된 미세기공 부피에 의한 시너지 효과 때문으로 판단된다. 또한, CO₂ 흡착량이 3.67 mmol/g보다 낮은 구간에서는 미세기공의 부피가 CO₂ 흡착에 더 큰 영향을 미쳤으며, 그보다 높은 구간에서는 도입된 불소의 함량이 더 큰 영향을 미치는 것을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.74-77
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• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2004년도 학술논문집
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• pp.32-42
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• 2004

Recently, plasma surface-cleaning or surface-etching techniques have been focused in respect of the decontamination of spent or used nuclear parts and equipment. In this study the removal rate of metallic cobalt surface is experimentally investigated via its surface etching rate with a $CF_4-o_2$mixed gas plasma. Experimental results reveal that a mixed etchant gas with about 80% $CF_4$-20% $O_2$ (molar) gives the highest reaction rate and the rate reaches 0.06 ${\mu}m$/min at $380^{\circ}C$ and ion-assisted etching dramatically enhances the surface reaction rate. With a negative 300 V DC bias voltage applied to the substrate, the surface reaction initiation temperature lowers and the rate increases about 20 times at $350^{\circ}C$ and up to 0.43 ${\mu}m$/min at $380^{\circ}C$, respectively. Surface morphology analysis confirms the etching rate measurements. Auger spectrum analysis clearly shows the adsorption of fluorine atoms on the reacted surface. From the current experimental findings and the results discussed in previous studies, mechanistic understanding of the surface reaction, fluorination and/or fluoro-carbonylation reaction, is provided.

• 한국항공우주학회지
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• 제45권8호
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• pp.697-703
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• 2017

펄스형 플라즈마 추력기의 성능해석을 위해 Teflon의 승화와 이온화 모델링을 수행하였다. PPT 작동 시 발생하는 방전 전휴의 변화를 예측하기 위해 일차원 lumped circuit model을 적용하였으며 Mickeal Keidar가 제시한 테플론-플라즈마 온도에 따른 테플론 승화 모델을 적용하였다. Saha 방정식을 이용하여 테플론 구성 원소인 탄소와 불소분자의 이온화를 예측하였다. 프로그램 검증을 위해 선행실험 결과와 비교하여 유사함을 확인하였으며 PPT 작동 전압에 따른 전류 변화정도를 고찰하였다.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.911-914
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• 2011

We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and $SF_6$ plasma treatments of ITO/Al reflector, the specific contact resistance decreased from $1.04{\times}10^{-3}\;{\Omega}{\cdot}cm^2$ to $9.21{\times}10^{-4}\;{\Omega}{\cdot}cm^2$, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.714-719
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• 2001

SrBi$_2$Ta$_2$$O_{9}$ thn films were etched in inductively coupled Cl$_2$/CF$_4$/Ar plasma. THe maximum etch rate was 1060 $\AA$/min at a Cl$_2$/(Cl$_2$+CF$_4$+Ar)=0.2. The 20% additive Cl$_2$ into CF$_4$/Ar plasma decreased carbon and fluorine radicals, but increased Cl radicals. Sr was effectively removed by reacting with Cl radical because the boiling point of SrCl$_2$(125$0^{\circ}C$) is lower than that of SrF$_2$(246$0^{\circ}C$). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching profile was evaluated by using scanning electron microscopy.y.

• 한국표면공학회지
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• 제34권5호
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• pp.391-394
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• 2001

A new type plasma reactor is proposed to decompose CF4 diluted with N2 gas in atmospheric pressure. The arc plasmas is surrounded with a waterwall which acts as a source of water vapor, the solvent of HF, resultant product after decomposition, and conveyer to take away fluorine compound from exhaust gas. Abatement more than 99% is achieved by small size plasmas such as 1 cm in diameter, 25cm in length and 3.4KW of DC discharge power in such gas as the mixture of 100 sccm of CF4 and 15 slm of N2. Reactors of this type are to be expanded to such a system as Nitrogen flow of 50 slm with 200 sccm of CF4 and 7-8 KW discharge power.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.202-202
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• 2012

염료감응태양전지(DSSC)의 광변환 효율을 향상시키기 위하여 진공챔버에서 450도 고온에서 O2, Ar, and N2 혼합가스를 주입하여 다양한 plasma로 TiO2 박막을 처리하면서 소성시켰다. TiO2 표면을 cleaning하고 활성화함으로서 염료의 결합력을 향상시키는 것 외에 TiO2 내부의 oxygen vacancy를 변화를 관찰하였다. 실험에 사용한 박막은 glass 위에 FTO 박막을 입히고, 다공성 TiO2 나노입자 박막을 코팅하여 제조하였다(porous TiO2 나노입자(${\sim}12{\mu}m$)/FTO(Fluorine doped Tin oxide; $1{\mu}m$)/glass). 완성된 광전극에 대해서 XRD, XPS, EIS, FE-SEM 등을 이용하여 분석하였다. 또한 이렇게 전처리된 광전극을 사용한 DSSC를 제작하였다. 그리고 Solar-simulator를 통해 그 효율을 측정하여 '플라즈마환경에서 소성된 광전극에 대한 DSSC의 광변환효율에 미치는 효과'을 고찰하였다.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.221-225
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• 2014

Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

• 한국표면공학회지
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• 제29권5호
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• pp.577-584
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• 1996

Silicon oxide films with high hardness and water repellency were prepared by microwave plasma-enhanced CVD using four kind of organosilicon compound-fluoro-alkyl silane mixtures as source gases. An argon gas was used as a carrier gas for fluoro-alkyl silane. The substrate temperatures during deposition were controlled by resistant heating at a constant value between 50 and $300^{\circ}C$. The hardness of the films increased, but the deposition rate and the contact angle for a water drop decreased with increasing substrate temperature. The number of methoxy groups also affected the water repellency and hardness. The deposited films became more inorganic with increasing substrate temperature because of the thermal dissociation of reactants.