• Korean Journal of Materials Research
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• v.23 no.10
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• pp.586-591
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• 2013

The printing of nanomaterials onto certain substrates is one of the key technologies behind high-speed interconnection and high-performance electronic devices. For the printing of next-generation electronic devices, a printing process which can be applied to a flexible substrate is needed. A printing process on a flexible substrate requires a lowtemperature, non-vacuum process due to the physical properties of the substrate. In this study, we obtained well-ordered Ag nanowires using modified gravure printing techniques. Ag nanowires are synthesized by a silver nitrate ($AgNO_3$) reduction process in an ethylene glycol solution. Ag nanowires were well aligned by hydrodynamic force on a micro-engraved Si substrate. With the three-dimensional structure of polydimethylsiloxane (PDMS), which has an inverse morphology relative to the micro-engraved Si substrate, the sub-micron alignment of Ag nanowires is possible. This technique can solve the performance problems associated with conventional organic materials. Also, given that this technique enables large-area printing, it has great applicability not only as a next-generation printing technology but also in a range of other fields.

• Electronic Materials Letters
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• v.14 no.6
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• pp.678-688
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• 2018

The repeated-bending properties of Sn-0.7Cu, Sn-0.3Ag-0.7Cu (SAC0307), and Sn-3.0Ag-0.5Cu (SAC305) solders mounted on flexible substrates were studied using highly accelerated stress testing (HAST), followed by repeated-bending testing. In the Sn-0.7Cu joints, the $Cu_6Sn_5$ intermetallic compound (IMC) coarsened as the HAST time increased. For the SAC0307 and SAC305 joints, the $Ag_3Sn$ and $Cu_6Sn_5$ IMCs coarsened mainly along the grain boundary as the HAST time increased. The Sn-0.7Cu solder had a high contact angle, compared to the SAC0307 and SAC305 solders; consequently, the SAC0307 and SAC305 solder joints displayed smoother fillet shapes than the Sn-0.7Cu solder joint. The repeated-bending for the Sn-0.7Cu solder produced the crack initiated from the interface between the Cu lead wire and the solder, and that for the SAC solders indicated the cracks initiated at the surface, but away from the interface between the Cu lead wire and the solder. Furthermore, the oxide layer was thickest for Sn-0.7Cu and thinnest for SAC305, regardless of the HAST time. For the SAC solders, the crack initiation rate increased as the oxide layer thickened and roughened. $Cu_6Sn_5$ precipitated and grew along the grain and subgrain boundaries as the HAST time increased, embrittling the grain boundary at the crack propagation site.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.111-118
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• 2018

In order to develop a local stiffness-variant stretchable substrate with the soft PDMS/hard PDMS/FPCB configuration consisting of two stiffness-different polydimethylsiloxane (PDMS) parts and flexible printed circuit board, a FPCB was bonded to PDMS using the acrylic-silicone double-sided tape and the interfacial adhesion of the PDMS/FPCB was evaluated. The pull strength of the FPCB, which was bonded to the fully cured PDMS using the silicone adhesive of the double-sided tape, was 259 kPa and the delamination during the pull test occurred at the interface between the PDMS and the silicone adhesive. On the contrary, the bonding process, for which the FPCB was bonded using the silicone adhesive to the PDMS partially cured for 15~20 minutes at $60^{\circ}C$ and then the PDMS was fully cured for 12 hours at $60^{\circ}C$, exhibited the remarkably enhanced pull strength of 1,007~1,094 kPa. With the above mentioned bonding process, the delamination during the pull test was observed at the interface between the FPCB and the acrylic adhesive of the acrylic-silicone double sided tape.

• Journal of Electrochemical Science and Technology
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• v.13 no.4
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• pp.453-461
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• 2022

A chemically sintered and binder-free paste of TiO₂ nanoparticles (NPs) was prepared using a binary-liquid mixture of 1-octanol and CCl₄. The 1:1 (v/v) complex of CCl₄ and 1-octanol easily interacted chemically with the TiO₂ NPs and induced the formation of a highly viscous paste. The as-prepared binary-liquid paste (P_BL)-based TiO₂ film exhibited the complete removal of the binary-liquid and residuals with the subsequent low-temperature sintering (~150℃) and UV-O₃ treatment. This facilitated the fabrication of TiO₂ photoanodes for flexible dye-sensitized solar cells (f-DSSCs). For comparison purposes, pure 1-octanol-based TiO₂ paste (P_O) with moderate viscosity was prepared. The P_BL-based TiO₂ film exhibited strong adhesion and high mechanical stability with the conducting oxide coated glass and plastic substrates compared to the P_O-based film. The corresponding low-temperature sintered P_BL-based f-DSSC showed a power conversion efficiency (PCE) of 3.5%, while it was 2.0% for P_O-based f-DSSC. The P_BL-based low- and high-temperature (500℃) sintered glass-based rigid DSSCs exhibited the PCE of 6.0 and 6.3%, respectively, while this value was 7.1% for a 500℃ sintered rigid DSSC based on a commercial (or conventional) paste.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.224-229
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• 2010

Transparent conductive oxide films have been widely used in the field of flat panel display (FPD). Transparent conductive Indium Zinc Oxide (IZO) thin films with excellent chemical stability have attracted much attention as an alternative material for Indium Tin Oxide (ITO) films. In this study, using $In_2O_3$ and ZnO powder mixture with a ratio of 90 : 10 wt% as a target, IZO films are prepared on polynorbornene (PNB) substrates by electron beam evaporation. The effect of thickness and $O_2$ introduction flow rate on the optical, electrical, structural properties and surface composition of deposited IZO films were investigated by UV/Visible spectrophotometer, 4-point probe method, SEM, XRD and XPS.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.3
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• pp.113-116
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• 2017

100 nm thick Sn doped ZnO (ZTO) single layer, 15 nm thick Ag buffered ZTO (ZTO/Ag), Ag intermediated ZTO (ZTO/Ag/ZTO) and Ag capped ZTO (Ag/ZTO) films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering and then the influence of the Ag thin film on the optical and electrical properties of ZTO films were investigated. As deposited ZTO thin films show the visible transmittance of 81.8%, while ZTO/Ag/ZTO trilayer films show a higher visible transmittance of 82.5% in this study. From the observed results, it can be concluded that the 15 nm thick Ag interlayer enhances the opto-electrical performance of ZTO thin films effectively for use as flexible transparent conducting oxides films in various opto-electrical applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1030-1033
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• 2004

We herewith report for the effect of dielectric surface modification on the electrical characteristics of organic thin-film transistors (OTFTs). The kist-jm-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide ($ZrO_2$) gate dielectric layer. The OTFTs are elaborated on the flexible plastic substrates through 4-level mask process to yield a simple fabrication process. In this work, we also have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.203-204
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• 2009

The Indium Zinc Tin Oxide (IZTO) thin films for flexible display electrode were deposited on poly carbonate (PC) and polyethersulfone(PES) and glass substrates at room temperature by facing targets sputtering (FTS). Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90 wt.%, $SnO_2$ 10 wt.%), the other is IZO ($In_2O_3$ 90 wt.%, ZnO 10 wt.%). As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), an atomic force microscope (AFM) and a Hall Effect measurement system. As a result, we could prepare the IZTO thin films with the resistivity of under $10^{-4}\;[{\Omega}{\cdot}cm]$ and IZTO thin films deposited on glass substrate showed an average transmittance over 80% in visible range (400~800 nm) in all IZTO thin films except in IZTO thin film deposited at $O_2$ gas flow rate of 0.1[sccm].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1009-1013
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• 2009

In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.116.2-116.2
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• 2011

연성 CIGS 태양전지를 제작하기 위해서는 휘어지는 연성 기판재의 적용이 반드시 필요하다. 상용되는 연성 기판재로는 플라스틱, 폴리이미드, 금속재가 있다. 그러나 플라스틱과 폴리이미드는 고효율의 CIGS 흡수층을 제조하기 위한 $500{\sim}600^{\circ}C$의 공정에 접합하지 못하다. 금속 기판재의 경우는 몰리브데늄, 알루미늄, 티타늄, 크롬강, 스테인레스강, 합금재 등이 있다. 이러한 금속 기판재 중에서 Fe-Ni 합금재는 Ni 함량의 변화에 따라 기계적, 자기적, 열팽창 특성이 다르게 나타나는 것으로 알려져 있다. 선행 연구에서 CIGS 태양전지의 기판재로 열팽창 계수가 박막층과 유사한 SUS400번 계열과 Fe-52Ni이 적합하다는 것을 확인 하였다. 따라서 본 연구에서는 유한요소해석(Finite element analysis) 프로그램인 Algor를 이용하여 CIGS solar cell을 설계하고 Fe-52Ni 기판재와 절연층인 SiO2, 흡수층인 CIGS의 두께에 따른 Cell의 잔류응력을 해석하였다.