• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.153-156
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• 2004

A newly developed flexible active-matrix (AM-) electrophoretic display (EPD) is reported. The AM-EPD features: (1) low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology, (2) fully integrated scan- and data-drivers, (3) flexibility and light-weight realized by transferring the whole circuits onto a plastic substrate using $SUFTLA^{TM}$ (Surface Free Technology by Laser Annealing/Ablation) process. A large storage capacitor is formed in each pixel so that driving electric field can be kept sufficiently strong during a writing period Two-phase driving scheme, a reset-phase which erases a previous image and a writing-phase for writing a new image, was chosen to cope with EPD's high driving voltage. The flexible AM-EPD has been successfully operated with a driving voltage of 8.5 V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.174-180
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• 2009

A new flexible electronics technology, named P-FCB (Planar Fashionable Circuit Board), is introduced. P-FCB is a circuit board technology implemented on the plain fabric patch for wearable electronics applications. In this paper, the manufacturing of P-FCB, and its electrical characteristics such as sheet resistance, maximum current density, and frequency characteristics are reported. The fabrication methods and their electrical characteristics of passive devices such as resistor, capacitor, and inductor in P-FCB are discussed. In addition, how to integrate silicon chip directly to the fabric for the flexible electronics system are described. Finally, examples of P-FCB applications will be presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.257-260
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• 2007

Hydrogenated amorphous silicon thin film transistors were fabricated on a flexible metal substrate. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and gate electrode. This can recover the shifted-threshold voltage to an original value.

• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.90-96
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• 2014

Flexible $ZrO_2$ films as dielectric materials for high-energy-density capacitors were deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $ZrO_2$ films were dependent on the sputtering pressure and gas ratio. Although $ZrO_2$ films were deposited at room temperature, all films showed a tetragonal crystalline structure regardless of the sputtering variables. The surface of the film became a surface with large white particles upon an increase in the $O_2/Ar$ gas ratio. The RMS roughness and crystallite size of the $ZrO_2$ films increased with an increase in the sputtering pressure. The electrical properties of the $ZrO_2$ films were affected by the microstructure and roughness. The $ZrO_2$ films exhibited a dielectric constant of 21~38 at 1 kHz and a leakage current density of $10^{-6}{\sim}10^{-5}A/cm^2$ at 300 kV/cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.442-442
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• 2014

Although electrochemical capacitors (ECs), also known as supercapacitors or ultracapacitors, is one of the most promising energy-storage devices because of its high power density, super-high cycle life, and safe operation. We herein report a synthesis of graphene-based flexible films by kneading method. Thus, a device can be readily made by sandwiching a polymer membrane included ionic liquid electrolytes between two identical graphene-based flexible films. Devices made with these electrodes exhibit ultrahigh energy density values while maintaining the high power density and excellent cycle stability of ECs. Moreover, these ECs maintain excellent electrochemical attributes under high mechanical stress and thus hold promise for high-energy, flexible electronics.

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.207-213
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• 2014

Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.190-196
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• 2014

Flexible $TiO_2$ films were deposited as dielectric materials for high-energy-density capacitors on polyethylene terephthalate (PET) substrates using a roll-to-roll sputtering method. Both the growth behavior and electrical properties of the flexible $TiO_2$ films were dependent on the sputtering pressure and $O_2$/Ar gas ratio during the sputtering process. All $TiO_2$ films had an amorphous structure regardless of the sputtering conditions due to the low substrate temperature. Microstructural characteristics such as the surface morphology and roughness of the films degraded with an increase in the sputtering pressure and $O_2$ gas concentration. The $TiO_2$ films deposited at a low pressure showed better electrical properties than those of films deposited at a high pressure. The $TiO_2$ films prepared at 10 mTorr exhibited a dielectric constant of approximately 90 at 1 kHz and a leakage current density of $5{\sim}6{\times}10^{-7}A/cm^2$ at 3 MV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.42-42
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• 2007

In the future, electronic components will be integrated on flexible polymer substrates and then miniaturized by thin films using suitable thin film technologies. In this article, the concept of a room temperature CVD is demonstrated using $Bi_3NbO_7$ (BNO) films with a cubic fluorite structure and their structural and electrical properties were investigated in films deposited without substrate heating. Effects of substrate temperature on electrical properties of BNO films were also studied. Films deposited without substrate heating (real temperature of $50^{\circ}C$) show partially crystallized BNO single phases with grain size of approximately 6.5 nm. Their dielectric and leakage properties are comparable to those of films deposited by pulsed laser deposition at room temperature. The concept of room temperature CVD will become a new paradigm in the deposition of dielectric thin films for flexible electron device applications.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1261-1268
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• 2013

This study proposes a voltage and reactive coordinative control strategy with distributed generator (DG) in a distribution power system. The aim is to determine the optimum dispatch schedules for an on-load tap changer (OLTC), distributed generator settings and all shunt capacitor switching on the load and DG generation profile in a day. The proposed method minimizes the real power losses and improves the voltage profile using squared deviations of bus voltages. The results indicate that the proposed method reduces the real losses and voltage fluctuations and improve receiving power factor. This paper proposes coordinated voltage and reactive power control methods that adjust optimal control values of capacitor banks, OLTC, and the AVR of DGs by using a voltage sensitivity factor (VSF) and dynamic programming (DP) with branch-and-bound (B&B) method. To avoid the computational burden, we try to limit the possible states to 24 stages by using a flexible searching space at each stage. Finally, we will show the effectiveness of the proposed method by using operational cost of real power losses and voltage deviation factor as evaluation index for a whole day in a power system with distributed generators.

• Proceedings of the KIPE Conference
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• 2014.11a
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• pp.163-164
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• 2014

전력계통은 전력수요의 지속적인 성장에 따라서 전력설비의 추가를 지속적으로 추진하고 있지만, 심해지는 환경문제 등으로 인해 용지 확보에 어려움이 있다. 이로 인해 송전선로 장거리화, 용량부족량 등 전력계통에 여러 가지 복잡한 문제가 야기되는데. 이것은 곧 전력계통의 안정도와 직결된다. 이러한 문제를 효과적이면서 경제적인 해결방법으로 FACT(Flexible AC Transmission System)기술이 주목 받고 있다. FACTS 기기 중 SVC(Static Var Compensator)는 상용운전 중이며, 기존 동기조상기에 비해 저렴하고, 신속 정확한 전압제어를 하는 장점이 있다. SVC는 TCR(Thyristor Controlled Reactor)과 TSC(Thyristor Switched Capacitor), FC(Fixed Capacitor)등 여러 종류의 구성을 가지고 있다. 합성시험회로설비(Synthetic Test Circuit)는 Thyristor로 구성된 TCR, TSC Valve를 실제 운전조건으로 동작시켜 SVC Valve의 신뢰성을 검증하는 설비이다. 특히, TSC Valve는 운전시 초기 과전류가 발생하는 운전특성상 이에 대한 평가기준에 따른 시험을 통해 신뢰성을 반드시 검증하여야 한다. 본 논문에서는 IEC 61954에서 제시하는 시험평가 기준에 의거하여 TSC의 Overcurrent Test를 위한 STC 평가 방법를 기술하고 설계된 TSC 시험을 위한 STC topology와 Simulation으로 검증 방법을 기술한다.