• Title/Summary/Keyword: Flexible OLED

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Improvement of Permeation of Solvent-free Multi-layer Encapsulation of Thin Films on Polyethylene Terephthalate (PET) (고분자 기판위에 유기 용매를 사용하지 않은 다층 박막 Encapsulation 기술 개발)

  • Han Jin-Woo;Kang Hee-Jin;Kim Jong-Yeon;Seo Dae-Shik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.8
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    • pp.754-757
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    • 2006
  • The inorganic multi-layer thin film encapsulation was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Polyethylene Terephthalate (PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON, $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the WVTR for PET can be reduced from level of $0.57g/m^2/day$ (bare subtrate) to $1*10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicates that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

Characteristics and Gas Barrier Properties of Mg-Zn-F Films in Various Ratio of $MgF_2$ to Zn

  • Lee, Sung-Youp;Kim, Do-Eok;Shin, Byong-Wook;Kang, Byoung-Ho;Hong, Seok-Min;Kang, Shin-Won;Lee, Hyeong-Rag
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.899-901
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    • 2009
  • The magnesium fluoride ($MgF_2$) has very higher optical transmission than oxide or nitride material applied for gas barrier, so we manufactured Mg-Zn-F films with Mg-Zn-F target mixed in the various ratio of $MgF_2$ to Zn and characterized films' properties. Zn is used to increase packing density of barrier film. Thickness and optical transmission of Mg-Zn-F are 200 nm and over 90 %, respectively. The result of water vapor transmission rate at 38, RH 90 ~ 100% of the Mg-Zn-F film deposited with 4 : 6 ($MgF_2$ : Zn) ratio target reached below $1{\times}10^{-3}g$/($m^2{\cdot}day$), measuring limit of instrument.

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A Study on Wet Etch Behavior of Zinc Oxide Semiconductor in Acid Solutions

  • Seo, Bo-Hyun;Lee, Sang-Hyuk;Jeon, Jea-Hong;Choe, Hee-Hwan;Lee, Kang-Woong;Lee, Yong-Uk;Seo, Jong-Hyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.926-929
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    • 2007
  • A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.

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Fabrication of Flexible OTFT Array with Printed Electrodes by using Microcontact and Direct Printing Processes

  • Jo, Jeong-Dai;Lee, Taik-Min;Kim, Dong-Soo;Kim, Kwang-Young;Esashi, Masayoshi;Lee, Eung-Sug
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.155-158
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    • 2007
  • Printed organic thin-film transistor(OTFT) to use as a switching device for an organic light emitting diode(OLED) were fabricated in the microcontact printing and direct printing processes at room temperature. The gate electrodes($5{\mu}m$, $10{\mu}m$, and $20{\mu}m$) of OTFT was fabricated using microcontact printing process, and source/drain electrodes ($W/L=500{\mu}m/5{\mu}m$, $500{\mu}m/10{\mu}m$, and $500{\mu}m/20{\mu}m$) was fabricated using direct printing process with hard poly(dimethylsiloxane)(h-PDMS) stamp. Printed OTFT with dielectric layer was formed using special coating system and organic semiconductor layer was ink-jet printing process. Microcontact printing and direct printing processes using h-PDMS stamp made it possible to fabricate printed OTFT with channel lengths down to $5{\mu}m$, and reduced the process by 20 steps compared with photolithography. As results of measuring he transfer characteristics and output characteristics of OTFT fabricated with the printing process, the field effect characteristic was verified.

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Development of flexible 3.5' QCIF (176 X144 pixels) OTFT driven OLED;Integration technologies compatible with normal semiconductor processes

  • Kang, Seung-Youl;Ahn, Seong Deok;Oh, Ji-Young;Kim, Gi-Hyun;Koo, Jae Bon;You, In-Kyu;Kim, Chul-Am;Hwang, Chi-Sun;KoPark, Sang-Hee;Yang, Yong-Suk;Chung, Sung-Mook;Lee, Jeong-Ik;Chu, Hye-Yong;Suh, Kyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.62-65
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    • 2007
  • Conventional semiconductor processes have been utilized to fabricate 3.5-inch OTFT-driven OLEDs with a resolution of $176\;{\times}\;144$ pixels on plastic substrates. By using a PC-OVD method to deposit a pentacene layer and optimizing patterning and the following processes, we could complete a uniform and reliable integration procedure for an active matrix organic light emitting devices on a plastic substrate. The technical importance of ours is the applicability of conventional semiconductor process to organic materials on plastic substrates. Although there are many hurdles to overcome, our approach and technical improvements are proved to be applicable to plastic electronics.

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Indium Tin Oxide Thin Films Grown on Polyethersulphone (PES) Substrates by Pulsed-Laser Deposition for Use in Organic Light-Emitting Diodes

  • Kim, Kyung-Hyun;Park, Nae-Man;Kim, Tae-Youb;Cho, Kwan-Sik;Sung, Gun-Yong;Lee, Jeong-Ik;Chu, Hye-Yong
    • ETRI Journal
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    • v.27 no.4
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    • pp.405-410
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    • 2005
  • High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

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Characteristics of organic light-emitting diodes with AI cathode prepared by ITS system (TTS로 성막한 Al 캐소드를 가진 유기발광소자의 특성 분석)

  • Moon, Jong-Min;Lee, Sang-Hyun;Kim, Han-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.74-75
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    • 2007
  • We report on the characteristics of organic light-emitting diodes with Al cathode deposited by specially designed twin target sputter(TTS) system. It was found that the Al cathode films grown by TTS system were amorphous structure with nanocrystallines due to low substrate temperature during sputtering process. Effective confinement of high-density plasma between two Al targets lead to low temperature sputtering process on organic layer. Moreover, organic light-emitting diodes with Al cathode deposited by TTS system exhibited low leakage current density of $4{\times}10^{-6}\;mA/cm2$ at -6 V indicating plasma damage due to bombardment of energetic particles such as ions and $\gamma$-electrons was effectively restricted in the ITS system. Sputtering method using ITS system is expected to be applied in organic electronics and flexible displays due to its low temperature and plasma damage free deposition process.

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ITO/ZnO/Ag/ZnO/ITO Multilayers Films for the Application of a Very Low Resistance Transparent Electrode on Polymer Substrate

  • Ok, Chul-Ho;Han, Jin-Woo;Kim, Jong-Yeon;Kim, Byoung-Yong;Han, Jeong-Min;Moon, Hyun-Chan;Park, Kwang-Bum;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.397-397
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    • 2007
  • Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided(ITO)/zinc oxide(ZnO)/Ag/oxide(ZnO)/ITO. With about 50nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

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The Next Wave in Display Innovation

  • Webster, Steven C.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.4-4
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    • 2008
  • The progress in flat panel displays over the last two decades has been astonishing. In just 20 years, the LCD-TV grew up from a 2-inch curiosity, to an industry that will sell about 120 million flat panel TV's this year, with viewing area up to 4000 times larger. That success is based on continuous innovation, especially in manufacturing processes. For the next decade to bring another doubling of the business, progress will need to continue in four major areas: Human factors, ecological impact, visual quality, and of course continued drive towards affordability. This talk will detail the technology advances that can allow this industry to meet those challenges. Human factors. Today, we adapt our lifestyle to our technology. People organize their offices, and their homes, around displays. We pass around mobile phones to share images, rather than experiencing them as a group. Billions of newspapers continue to be sold daily. Advances in flexible displays can lead to large portable displays. "New era projection" includes the handheld Pico Projectors that are already on the market, and will ultimately appear integrated in mobile phones the same way cameras do today. "Eco" impact. Today TV's are one of the top energy consumers in a U.S. home, and the fastest growing. Watching a large flat panel TV can cost twice as much as running a large refrigerator. With today's concern about energy consumption, regulations are starting to emerge worldwide to limit TV electrical use. Fortunately, good solutions exist in using light management films to eliminate bulbs, saving power without increasing cost. Going forward, LED backlights will drive another step downward. OLED displays might be the ultimate solution. Visual quality. The color of an LCD-TV is still often considered inferior to a far less expensive CRT. And almost all displays suffer from representing a three-dimensional world on a two dimensional surface. The technology to improve color is available today, and will likely move from premium sets into the mainstream as costs come down. 3D is now arriving in movie theaters worldwide, and that will drive up the demand for similar realistic images in home theaters. And the technology is emerging today for 3D representation to move beyond specialized applications into everyday use, on screens large and small. Affordability. The world takes cost-down miracles for granted in consumer electronics. Each of these other advances will be balanced with a drive for affordability, especially as the market grows in emerging countries. The other three challenges must be met without increasing cost. Putting this all together, the next few years will emphasize "eco friendly" designs, and enhanced images such as 3D. By 2013 we will start to see serious penetration by emissive technologies (OLED, high efficiency plasma, or other), with the "ultimate display" likely not in the market for a decade. Lots of opportunities for innovation remain ahead of us.

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Improvement of Electrical Performance and Stability in ZnO Channel TFTs with Al Doped ZnO Layer (Al Doped ZnO층 적용을 통한 ZnO 박막 트랜지스터의 전기적 특성과 안정성 개선)

  • Eom, Ki-Yun;Jeong, Kwang-Seok;Yun, Ho-Jin;Kim, Yu-Mi;Yang, Seung-Dong;Kim, Jin-Seop;Lee, Ga-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.5
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    • pp.291-294
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    • 2015
  • Recently, ZnO based oxide TFTs used in the flexible and transparent display devices are widely studied. To apply to OLED display switching devices, electrical performance and stability are important issues. In this study, to improve these electrical properties, we fabricated TFTs having Al doped Zinc Oxide (AZO) layer inserted between the gate insulator and ZnO layer. The AZO and ZnO layers are deposited by Atomic layer deposition (ALD) method. I-V transfer characteristics and stability of the suggested devices are investigated under the positive gate bias condition while the channel defects are also analyzed by the photoluminescence spectrum. The TFTs with AZO layer show lower threshold voltage ($V_{th}$) and superior sub-threshold slop. In the case of $V_{th}$ shift after positive gate bias stress, the stability is also better than that of ZnO channel TFTs. This improvement is thought to be caused by the reduced defect density in AZO/ZnO stack devices, which can be confirmed by the photoluminescence spectrum analysis results where the defect related deep level emission of AZO is lower than that of ZnO layer.