• Title/Summary/Keyword: Fine-pitch

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미세피치용 Cu/SnAg 더블 범프 플립칩 어셈블리의 신뢰성에 관한 연구 (Reliability Studies on Cu/SnAg Double-Bump Flip Chip Assemblies for Fine Pitch Applications)

  • 손호영;김일호;이순복;정기조;박병진;백경욱
    • 마이크로전자및패키징학회지
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    • 제15권2호
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    • pp.37-45
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    • 2008
  • 본 논문에서는 유기 기판 위에 $100{\mu}m$ 피치를 갖는 플립칩 구조인 Cu(60 um)/SnAg(20 um) 더블 범프 플립칩 어셈블리를 구현하여 이의 리플로우, 고온 유지 신뢰성, 열주기 신뢰성, Electromigration 신뢰성을 평가하였다. 먼저, 리플로우의 경우 횟수와 온도에 상관없이 범프 접속 저항의 변화는 거의 나타나지 않음을 알 수 있었다. 125도 고온 유지 시험에서는 2000시간까지 접속 저항 변화가 관찰되지 않았던 반면, 150도에서는 Kirkendall void의 형성으로 인한 접속 저항의 증가가 관찰되었다 또한 Electromigration 시험에서는 600시간까지 불량이 발생하지 않았는데 이는 Al금속 배선에서 유발되는 높은 전류 밀도가 Cu 칼럼의 높은 두께로 인해 솔더 영역에서는 낮아지기 때문으로 해석되었다. 열주기 시험의 경우, 400 cycle 이후부터 접속 저항의 증가가 발견되었으며, 이는 열주기 시험 동안 실리콘 칩과 Cu 칼럼 사이에 작용하는 압축 변형에 의해 그 사이에 있는 Al 및 Ti 층이 바깥쪽으로 밀려나감으로 인해 발생하는 것으로 확인되었다.

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저온 및 고전류밀도 조건에서 전기도금된 구리 박막 간의 열-압착 직접 접합 (Thermal Compression of Copper-to-Copper Direct Bonding by Copper films Electrodeposited at Low Temperature and High Current Density)

  • 이채린;이진현;박기문;유봉영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.102-102
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    • 2018
  • Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

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Pitch-based carbon fibers from coal tar or petroleum residue under the same processing condition

  • Kim, Jiyoung;Im, Ui-Su;Lee, Byungrok;Peck, Dong-Hyun;Yoon, Seong-Ho;Jung, Doo-Hwan
    • Carbon letters
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    • 제19권
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    • pp.72-78
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    • 2016
  • Spinnable pitches and carbon fibers were successfully prepared from petroleum or coal pyrolysis residues. After pyrolysis fuel oil (PFO), slurry oil, and coal tar were simply filtered to eliminate the solid impurities, the characteristics of the raw materials were evaluated by elemental analysis, 13C nuclear magnetic resonance spectrometer, matrix-assisted laser desorption/ionization time-of-flight mass spectrometer (MALDI-TOF-MS), and so on. Spinnable pitches were prepared for melt-spinning carbon fiber through a simple distillation under strong nitrogen flow, and further vacuum distillation to obtain a high softening point. Carbon fibers were produced from the above pitches by single-hole melt spinning and additional heat treatment, for oxidization and carbonization. Even though spinnable pitches and carbon fibers were processed under the same conditions, the melt-spinning and properties of the carbon fiber were different depending on the raw materials. A fine carbon fiber could not be prepared from slurry oil, and the different diameter carbon fibers were produced from the PFO and coal tar pitch. These results seem to be closely correlated with the initial characteristics of the raw materials, under this simple processing condition.

첨단 반도체 패키징을 위한 미세 피치 Cu Pillar Bump 연구 동향 (Recent Advances in Fine Pitch Cu Pillar Bumps for Advanced Semiconductor Packaging)

  • 노은채;이효원;윤정원
    • 마이크로전자및패키징학회지
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    • 제30권3호
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    • pp.1-10
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    • 2023
  • 최근, 고사양 컴퓨터, 모바일 제품의 수요가 증가하면서 반도체 패키지의 고집적화, 고밀도화가 요구된다. 따라서 많은 양의 데이터를 한 번에 전송하기 위해 범프 크기 및 피치 (Pitch)를 줄이고 I/O 밀도를 증가시킬 수 있는 플립 칩 (flip-chip), 구리 필러 (Cu pillar)와 같은 마이크로 범프 (Micro-bump)가 사용된다. 하지만 범프의 직경이 70 ㎛ 이하일 경우 솔더 (Solder) 내 금속간화합물 (Intermetallic compound, IMC)이 차지하는 부피 분율의 급격한 증가로 인해 취성이 증가하고, 전기적 특성이 감소하여 접합부 신뢰성을 악화시킨다. 따라서 이러한 점을 개선하기 위해 UBM (Under Bump Metallization) 또는 Cu pillar와 솔더 캡 사이에 diffusion barrier 역할을 하는 층을 삽입시키기도 한다. 본 review 논문에서는 추가적인 층 삽입을 통해 마이크로 범프의 과도한 IMC의 성장을 억제하여 접합부 특성을 향상시키기 위한 다양한 연구를 비교 분석하였다.

Sn-3.5wt%Ag 비납솔더를 이용한 미세피치 솔더접합부의 신뢰성에 관한 연구 (Reliability of Fine Pitch Solder Joint with Sn-3.5wt%Ag Lead-Free Solder)

  • 하범용;이준환;신영의;정재필;한현주
    • Journal of Welding and Joining
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    • 제18권3호
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    • pp.89-96
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    • 2000
  • As solder becomes small and fine, the reliability and solderability of solder joint are the critical issue in present electronic packaging industry. Besides the use of lead(Pb) containing solders for the interconnections of microelectronic subsystem assembly and packaging has enviromental problem. In this study, using Sn/Pb and Sn/Ag eutectic solder paste, in order to obtain decrease of solder joint strength with increasing aging time, initial solder joint strength and aging strength after 1000 hour aging at $100^{\circ}C$ were measured by peel test. And in order to obtain the growth of intermetallic compound(IMC) layer thickness, IMC layer thickness was measured by scanning electron microscope(SEM). As a result, solder joint strength was decreased with increasing aging time. The mean IMC layer thickness was increased linearly with the square root of aging time. The diffusion coefficient(D) of IMC layer was found to $1.29{\times}10^{-13}{\;}cm^2/s$ at using Sn/Pb solder paste, 7.56{\times}10^{-14}{\textrm}{cm}^2/s$ at using Sn/Ag solder paste.

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Development of Flight Control Laws for the T-50 Advanced Supersonic Jet Trainer

  • Kim, Chong-Sup;Hur, Gi-Bong;Hwang, Byung-Moon;Cho, In-Je;Kim, Seung-Jun
    • International Journal of Aeronautical and Space Sciences
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    • 제8권1호
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    • pp.32-45
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    • 2007
  • The T-50 advanced supersonic jet trainer employs the Relaxed Static Stability (RSS) concept to improve the aerodynamic performance while the flight control system stabilizes the unstable aircraft and provides adequate handling qualities. The T-50 flight control laws employ a proportional-plus-integral type controller based on a dynamic inversion method in longitudinal axis and a proportional type controller based on a blended roll system with simple roll rate feedback and beta-betadot feedback system. These control laws are verified by flight tests with various maneuver set flight envelopes and the control laws are updated to resolve flight test issues. This paper describes several concepts of flight control laws used in T-50 to resolve those flight test issues. Control laws for solving the roll-off problem during pitch maneuver in asymmetric loading configurations, improving the departure resistance in negative angle of attack conditions and enhancing the fine tracking performance in air-to-air tracking maneuvers are described with flight test data.

마이크로 전자기판의 미세 피치 블라인드 비아홀의 충진 거동 (Via Filling in Fine Pitched Blind Via Hole of Microelectronic Substrate)

  • 이민수;이효수
    • 마이크로전자및패키징학회지
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    • 제13권1호통권38호
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    • pp.43-49
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    • 2006
  • 새로운 잔류 기공 추출 공정을 적용하여 Blind via hole(BVH)의 형상에 따라 발생되는 잔류기공 특성, 거동 및 신뢰성평가를 수행하였다. 잔류 기공 추출 공정을 적용한 시편에서는 잔류기공이 완전히 제거 되었으며, 기존 공정으로 제조된 시편에 비하여 40% 수준의 향상된 결과를 나타내었다. BVH의 형상에 관계없이 1.5기압수준으로 약 30초 이상 동안 추출하면 BVH내부의 잔류기공은 제거 되어지며 JEDEC 기준의 신뢰성으로 평가한 결과 BVH내부에 잔류기공은 존재하지 않았다.

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BUMPLESS FLIP CHIP PACKAGE FOR COST/PERFORMANCE DRIVEN DEVICES

  • Lin, Charles W.C.;Chiang, Sam C.L.;Yang, T.K.Andrew
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 International Symposium
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    • pp.219-225
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    • 2002
  • This paper presents a novel "bumpless flip chip package"for cost! performance driven devices. Using the conventional electroplating and etching processes, this package enables the production of fine pitch BGA up to 256 I/O with single layer routing. An array of circuitry down to $25-50{\mu}{\textrm}{m}$ line/space is fabricated to fan-in and fan-out of the bond pads without using bumps or substrate. Various types of joint methods can be applied to connect the fine trace and the bond pad directly. The resin-filled terminal provides excellent compliancy between package and the assembled board. More interestingly, the thin film routing is similar to wafer level packaging whereas the fan-out feature enables high lead count devices to be accommodated in the BGA format. Details of the design concepts and processing technology for this novel package are discussed. Trade offs to meet various cost or performance goals for selected applications are suggested. Finally, the importance of design integration early in the technology development cycle with die-level and system-level design teams is highlighted as critical to an optimal design for performance and cost.

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단결정 다이아몬드공구 제작 기술을 통한 초정밀 미세패턴 가공 연구 (Research on ultra-precision fine-pattern machining through single crystal diamond tool fabrication technology)

  • 정성택;송기형;최영재;백승엽
    • Design & Manufacturing
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    • 제14권3호
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    • pp.63-70
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    • 2020
  • As the consumer market in the VR(virtual reality) and the head-up display industry grows, the demand for 5-axis machines and grooving machines using on a ultra-precision machining increasing. In this paper, ultra-precision diamond tools satisfying the cutting edge width of 500 nm were developed through the process research of a focused ion beam. The material used in the experiment was a single-crystal diamond tool (SCD), and the equipment for machining the SCD used a focused ion beam. In order to reduce the influence of the Gaussian beam emitted from the focused ion beam, the lift-off process technology used in the semiconductor process was used. 2.9 ㎛ of Pt was coated on the surface of the diamond tool. The sub-micron tool with a cutting edge of 492.19 nm was manufactured through focused ion beam machining technology. Toshiba ULG-100C(H3) equipment was used to process fine-pattern using the manufactured ultra-precision diamond tool. The ultra-precision machining experiment was conducted according to the machining direction, and fine burrs were generated in the pattern in the forward direction. However, no burr occurred during reverse machining. The width of the processed pattern was 480 nm and the price of the pitch was confirmed to be 1 ㎛ As a result of machining.

Dosimetry Check™를 이용한 MVCT 선량계산 모델 구축에 관한 연구 (A Study on the Construction of MVCT Dose Calculation Model by Using Dosimetry Check™)

  • 엄기천;김창환;전수동;백금문
    • 대한방사선기술학회지:방사선기술과학
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    • 제43권6호
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    • pp.431-441
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    • 2020
  • The purpose of this study was to construct a model of MVCT(Megavoltage Computed Tomography) dose calculation by using Dosimetry Check™, a program that radiation treatment dose verification, and establish a protocol that can be accumulated to the radiation treatment dose distribution. We acquired sinogram of MVCT after air scan in Fine, Normal, Coarse mode. Dosimetry Check™(DC) program can analyze only DICOM(Digital Imaging Communications in Medicine) format, however acquired sinogram is dat format. Thus, we made MVCT RC-DICOM format by using acquired sinogram. In addition, we made MVCT RP-DICOM by using principle of generating MLC(Multi-leaf Collimator) control points at half location of pitch in treatment RP-DICOM. The MVCT imaging dose in fine mode was measured by using ionization chamber, and normalized to the MVCT dose calculation model, the MVCT imaging dose of Normal, Coarse mode was calculated by using DC program. As a results, 2.08 cGy was measured by using ionization chamber in Fine mode and normalized based on the measured dose in DC program. After normalization, the result of MVCT dose calculation in Normal, Coarse mode, each mode was calculated 0.957, 0.621 cGy. Finally, the dose resulting from the process for acquisition of MVCT can be accumulated to the treatment dose distribution for dose evaluation. It is believed that this could be contribute clinically to a more realistic dose evaluation. From now on, it is considered that it will be able to provide more accurate and realistic dose information in radiation therapy planning evaluation by using Tomotherapy.