• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.67-74
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• 2011

Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.09a
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• pp.21-30
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• 2002

According the difference of flex substrate, (reel tape), there are three kind assembly types of LCD driver IC is COG, TCP and COF, respectively. The TCP is the maturest in these types for stability of raw material supply and other specification. And TCP is the major assembly type of LCD driver IC and the huge demand from Taiwan's large TFT LCD panel house since this spring. But due to its package structure and the raw material applied in this package, there is some limitation in fine pitch application of this package type, (TCP). So, COF will be very potential in compact and portable application comparison with TCP in the future. There are three kinds assembly methods in COF, one is ACF by using the anisotropic conductive film to connect the copper lead of tape and gold bump of IC, another is eutectic bonding by using the thermo-pressure to joint the copper lead of tape and gold bump of IC, and last is NCP by using non-conductive paste to adhere the copper lead of tape and gold bump of IC. To have a global realization, this paper will briefly review the status of Taiwan's large TFT panel house, the internal driver IC design house, and the back-end assembly house in the beginning. The different material property of raw material, PI tape is also compared in the paper. The more detail of three kinds of COF assembly method will be described and compared in this paper.

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.873-878
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• 2000

Semiconductor packaging technology is changed rapidly according to the trends of the micro miniaturization of multimedia and information equipment. For I/O limitation and fine pitch limitation, DIP and SOP/QFP are replaced by BGA/CSP. This is one of the surface mount technology(SMT). Solder ball is bumped n the die pad and connected onto mounting board. In ball bump formation, vacuum suction type ball alignment process is widely used, However this type has some problems such as ionization, static electricity and difficulty of fifo(first-input first-out) of solder balls. Seesaw type is reducing these problems and has a structural simplicity and economic efficiency. Ball cartridge velocity and ball aligned plate angle are Important variables to improve the ball alignment Process. In this paper, seesaw-type CSP solder ball loader is developed and the optimal velocity and plate angle are proposed.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.43-55
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• 2000

In traditional electronic packages the die and the substrate are interconnected with fine wire. Wire bonding technology is limited to bond pads around the peripheral of the die. As the demand for I/O increases, there will be limitations with wire bonding technology. Flip chip technology eliminates the need for wire bonding by redistributing the bond pads over the entire surface of the die. Instead of wires, the die is attached to the substrate utilizing a direct solder connection. Although several steps and processes are eliminated when utilizing flip chip technology, there are several new problems that must be overcome. The main issue is the mismatch in the coefficient of thermal expansion (CTE) of the silicon die and the substrate. This mismatch will cause premature solder Joint failure. This issue can be compensated for by the use of an underfill material between the die and the substrate. Underfill helps to extend the working life of the device by providing environmental protection and structural integrity. Flux residues may interfere with the flow of underfill encapsulants causing gross solder voids and premature failure of the solder connection. Furthermore, flux residues may chemically react with the underfill polymer causing a change in its mechanical and thermal properties. As flip chip packages decrease in size, cleaning becomes more challenging. While package size continues to decrease, the total number of 1/0 continue to increase. As the I/O increases, the array density of the package increases and as the array density increases, the pitch decreases. If the pitch is decreasing, the standoff is also decreasing. This paper will present the keys to successful flip chip cleaning processes. Process parameters such as time, temperature, solvency, and impingement energy required for successful cleaning will be addressed. Flip chip packages will be cleaned and subjected to JEDEC level 3 testing, followed by accelerated stress testing. The devices will then be analyzed using acoustic microscopy and the results and conclusions reported.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.43-49
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• 2006

The properties, behavior and reliability of the residual void in blind via hole(BVH) were carried out for the shape of BVH using the void extraction process. The residual void was perfectly removed in the specimens applied by the void extraction process, which was improved by 40% rather than the conventional process. The residual void in BVH was to be eliminated under a condition of 1.5 atm for more 30 sec with regardless of the shape of BVH. It was also observed that the residual void in BVH was not formed after the reliability test with JEDEC standard.

• Laser Solutions
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• v.2 no.1
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• pp.38-42
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• 1999

As very large scale integration technology has been developed, much more accurate, reliable technology is needed for outer lead bonding. Laser soldering has been researched as an alternative for fine pitch device bonding. This study is focused on how to select optimal laser soldering variables with which solder wets parent material, the microstructural results of laser soldering and the reliability test One of popular packages, QFP100 was soldered successfully with two kinds of solder. The inspection of the joint for reliability was carried out by optical microscope, SEM, EDAX and pull test, which demonstrated the superiority of laser soldering.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.21-26
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• 1998

대용량, 고속데이터 처리가 요구되는 System 개발은 이들의 복잡하고 고기능의 회 로 구현이 가능하냐에 달려 있고 또한 이들고기능 요구를 가장 잘 만족할수 있는 패키지는 MCM 이라 할 수있다. 시스템의 고속화, 소형화는 회로의 복잡성을 요구하는 있는 이를 패 키지로 구현하는 MCM은 시험성 확보에 심각한 문제점으로 나타나고 있다. 본 논문에서는 고밀도 구조의 MCM 기판에 대한 Interconnetion Line 시험검증을 위한 Flying Prober의 적 용 및 모듈 패키징 공정에 대한 조립성 검증을 위한 BST에 대해 설명한다. 연구에 사용된 MCM 모듈은 MCM-D 공정으로 제작되었으며 31um 신호선폭, 50um Via Hole Dia. 5신호 선층 5절연층 및 455 Net의 기판으로절연층은 Dow chemical의 BCB-4024/4026을 적용하였 다. 조립은 3 ASIC, 24소자 실장 및 2000 Wire Bonding으로 이루어지며 패키지는 방열특성 을 고려한 BGA(491 I /O,50mil pitch)를 개발하여 사용하였다. MCM 기판의미세패턴으로 구성된 Interconnection Line에 대해 Fine Ptich Probing이 가능한 Flying Prober를 사용하 여 평가하였으며 BST를 이용하여 실장소자의 KGD평가 및 능동, 수동소자가 실장된 MCM Package의 조립시험성을 확보할수 있었다.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.23-34
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• 2013

Over the past several decades in the microelectronics industry, devices have gotten smaller, thinner, and lighter, without any accompanying degradation in quality, performance, and reliability. One permanent and deniable trend in packaging as well as wafer fabrication industry is system integration. The proliferating options for system integration, recently, are driving change across the overall semiconductor industry, requiring more investment in developing, ramping and supporting new die-, wafer- and board-level solution. The trend toward 3D system integration and miniaturization in a small form factor has accelerated even more with the introduction of smartphones and tablets. In this paper, the key issues and state of the art for system integration in the packaging process are introduced, especially, focusing on ease transition to next generation packaging technologies like through silicon via (TSV), 3D wafer-level fan-out (WLFO), and chip-on-chip interconnection. In addition, effective solutions like fine pitch copper pillar and MEMS packaing of both advanced and legacy products are described with several examples.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.1-10
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• 2023

Recently, as the demand for high-performance computers and mobile products increases, semiconductor packages are becoming high-integration and high-density. Therefore, in order to transmit a large amount of data at once, micro bumps such as flip-chip and Cu pillar that can reduce bump size and pitch and increase I/O density are used. However, when the size of the bumps is smaller than 70 ㎛, the brittleness increases and electrical properties decrease due to the rapid increase of the IMC volume fraction in the solder joint, which deteriorates the reliability of the solder joint. Therefore, in order to improve these issues, a layer that serves to prevent diffusion is inserted between the UBM (Under Bump Metallization) or pillar and the solder cap. In this review paper, various studies to improve bonding properties by suppressing excessive IMC growth of micro-bumps through additional layer insertion were compared and analyzed.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.35-39
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• 2023

ESG (Environment, Social, Governance) has become a major guideline for many companies to improve corporate value and enable sustainable management. Among them, the environment requires a technological approach. This is because technological solutions are needed to reduce or prevent environmental pollution and save energy. Semiconductor package technology has been developed to better satisfy the essential roles of semiconductor packaging: chip protection, electrical/mechanical connection, and heat dissipation. Accordingly, technologies have been developed to improve heat dissipation effect, improve electrical/mechanical properties, improve chip protection reliability, stacking and miniaturization, and reduce costs. Among them, heat dissipation technology increases thermal efficiency and reduces energy consumption for cooling. Also, technology to improve electrical characteristics has had an impact on the environment by reducing energy consumption. Technologies that recycling or reducing material consumption reduce environmental pollution. And technologies that replace environmentally harmful substances contribute to environmental improvement, in particular. In this paper, I summarize trends in semiconductor package technologies to prevent pollution and improve environment.