• Title/Summary/Keyword: Film stress

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Methods on Simple Radiography of Impingement Syndrome in Shoulder Joint (견관절 충돌증후군의 단순X선촬영 방법에 대한 검토)

  • Kweon, Dae-Cheol;Kim, Moon-Sun;Kim, Yong-Seob;Chung, Kyung-Mo
    • Journal of radiological science and technology
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    • v.23 no.1
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    • pp.21-27
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    • 2000
  • To evaluation of patients who have shoulder impingement syndrome is by diagnostic radiography. Shoulder impingement is a problem which occurs in young, active individuals as well as older individuals. In fact, the pain is probably caused by repetitive stress placed on the shoulder joint either through recreational activities of your occupation. Impingement series approach to radiographic examination of the shoulder is take five projections. First anteroposterior oblique projection. Second standard anteroposterior projection. Third superoinferior axial projection. Fourth supraspinatus outlet projection offers a view of the outlet of the supraspinatus tendon unit as it passes under the coraacromial arch. Fifth anteroposterior $30^{\circ}$ caudal projection will adequately demonstrate the anterior acromial spur or ossification in the coraacromial ligament and more reliable to demonstrate spurring of the anterior acromion than supraspinatus outlet projection. This decreased the need for additional radiographic veiws, reduces the patient's exposure to x - ray radiation and decreases use of film. This can lower the cost of the evaluation and improve patient satisfaction.

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Influence of Neutral Particle Beam Energy on the Structural Properties of Amorphous Carbon Films Prepared by Neutral Particle Beam Assisted Sputtering

  • Lee, Dong-Hyeok;Jang, Jin-Nyeong;Gwon, Gwang-Ho;Yu, Seok-Jae;Lee, Bong-Ju;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.194-194
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    • 2011
  • The effects of argon neutral beam (NB) energy on the amorphous carbon (a-C) films were investigated, while the a-C films were deposited by neutral particle beam assisted sputtering (NBAS) system. The energy of neutral particle beam can be controlled by reflector bias voltage directly as a unique operating parameter in this system. The deposition characteristics of the films investigated of Raman spectra, UV-visible spectroscopy, electrical conductivity, stress measurement system, and ellipsometer indicate the properties of amorphous carbon films can be manipulated by only NB energy (or reflector bias voltage) without changing any other process parameters. We report the effect of reflector bias voltage in the range from 0 to -1KV. By the increase of the reflector bias voltage, the amount of cross-linked sp2 clusters as well as the sp3 bonding in the a-C film coated by the NBAS system can be increased effectively and the composition of carbon thin films can be changed from nano-crystalline graphite phase to amorphous carbon phase.

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Structure & Mechanical Behavior of TiCN Thin Films by rf Plasma Deposition (RF Plasma법으로 증착된 TiCN박막의 구조 및 기계적 거동에 관한 연구)

  • Baeg, C.H.;Park, S.Y.;Hong, J.W.;Wey, M.Y.;Kang, H.J.
    • Journal of the Korean Society for Heat Treatment
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    • v.13 no.2
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    • pp.91-97
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    • 2000
  • The structure and mechanical properties of TiN and TiCN thin films deposited on STD61 steel substrates by the RF-sputtering methods has been studied by using XPS, XRD, micro-hardness tester, scratch tester, and wear-resistance tester. XPS results showed that the TiCN thin film formed with chemical bonding state. The TiN thin films grew with (111) orientation having the lowest strain energy by compressive stress, whereas the TiCN thin films grew with both (111) and (200) orientation, but (200) orientation having the lowest surface energy becomes dominant as carbon contents increase. The pre-etching treatment of substrate did not affect on the preferred orientation of thin films, but it played an important role in improving mechanical properties of thin films such as the hardness, adhesion and wear- resistance. Especially, the TiCN thin films showed the superior wear resistances due to high hardness and low friction coefficient compared with TiN thin films.

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Low voltage stability of a-Si:H TFTs with $SiN_x$ dielectric films prepared by PECVD using Taguchi methods

  • Wu, Chuan-Yi;Sun, Kuo-Sheng;Cho, Shih-Chieh;Lin, Hong-Ming
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.272-275
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    • 2005
  • The high stability of a-Si:H TFTs device is studied with different deposited conditions of $SiN_x$ films by PECVD. The process parameters of $N_2$, $NH_3$ gas flow rate, RF power, and pressure s of hydrogenated amorphous silicon nitride are taken into account and analyzed by Taguchi experimental design method. The $NH_3$ gas flow rate and RF power are two major factors on the average threshold voltage and the a-SiNx:H film's structure. The hydrogen contents in $SiN_x$ films were measured by FTIR using the related Si-H/N-H bonds ratio in $a-SiN_x:H$ films. After the 330,000 sec gate bias stress is applied, the threshold voltages ($V_th$) shift less than 10%. This result indicates that the highly stable a-Si:H TFTs device can be fabricated with optimum gate $SiN_x$ insulator.

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A study on the deposition of DLC thin films by using an FCVA technique (FCVA 방법에 의한 DLC 박막의 제작에 관한 연구)

  • Lee, Hae-Seung;Uhm, Hyun-Seok;Kim, Jong-Kuk;Choi, Byoung-Ryong;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1379-1382
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    • 1997
  • Diamond-like carbon(DLC) thin films are produced by using a filtered cathodic vacuum arc(FCVA) deposition system. Different magnetic components, namely steering, focusing, and filtering plasma-optic systems, are used to achieve a stable arc plasma and to prevent the macroparticles from incorporating into the deposited films. Effects of magnetic fields on plasma behavior and film deposition are examined. The carbon ion energy is found to be varied by applying a negative (accelerating) substrate bias voltage. The deposition rate of DLC films is dependent upon magnetic field as well as substrate bias voltage and at a nominal deposition condition is about $2{\AA}/s$. The structural properties of DLC films, such as internal stress, relative fraction of tetrahedral($sp^3$) bonds, and surface roughness have also been characterized as a function of substrate bias voltages and partial gas($N_2$) pressures.

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The Introduction of Shaft Alignment Calculation for very Large Container Vessel (초대형 콘테이너선의 축계정렬 계산 사례 소개)

  • Kang Dong Chun;Park Kun Woo;Kim Kyoung Ho
    • Special Issue of the Society of Naval Architects of Korea
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    • 2005.06a
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    • pp.138-143
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    • 2005
  • Recently, it is much more required to approach the accurate shaft alignment analysis according to the tendency of active showing in large container vessel and that of the heavy weight of propeller in connection with it. Shaft alignment calculation lies upon how the pressure apply on bearings properly in operation of main engine and how the stress of shaft puts within that of limit of bearing material and how the movement of shaft is prospected owing to propeller forces and moments. Therefore, we have conducted the shaft alignment calculation of very large container vessel considering the deformation of hull structure and the propeller forces and moments and the static and dynamic condition of shaft. The calculation results show the pressure distribution of aft bush and the movement of shaft in bearing. The shaft alignment calculation helps the stable application of shaft alignment, which was proved in sea trial.

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Polymer semiconductor based transistors for flexible display

  • Lee, Ji-Yeol;Lee, Bang-Rin;Kim, Ju-Yeong;Jeong, Ji-Yeong;Park, Jeong-Il;Jeong, Jong-Won;Gu, Bon-Won;Jin, Yong-Wan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.59.1-59.1
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    • 2012
  • Organic thin-film transistors (OTFTs) with printable semiconductors are promising candidate devices for flexible active-matrix (AM) display applications. Yet, stable operation of actual display panels driven by OTFTs has seldom been reported up to date. Here, we demonstrate a flexible reflective type polymer dispersed liquid crystal (PDLC) display, in which inkjet-printed OTFT arrays are used as driving elements with excellent areal uniformity in terms of device performance. As the active semiconductor, a novel, ambient processable conjugated copolymer was synthesized. The stability of the devices with respect to electrical bias stress was improved by applying a channel-passivation layer, which suppresses the environmental effects and hence reduces the density of trap states at the channel/dielectric interface. The combination of high performance and high stability OTFT devices enabled the successful realization of stable operating flexible color-displays by inkjet-printing.

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Fabrication and characterization of SiO2 based waveguide co-doped with Si-nanocrystal and Er3+ (Si 나노 입자와 Er3+를 공첨가한 SiO2계 도파로의 제작과 평가)

  • Choi, Se-Weon;Ko, Young-Ho;Chang, Se-Hun;Oh, Ik-Hyun;Kang, Chang-Seog
    • Korean Journal of Materials Research
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    • v.17 no.4
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    • pp.222-226
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    • 2007
  • [ $SiO_2$ ]thin films containing Si-nanocrystals and $Er^{3+}$ were fabricated by the RF-sputtering method. Intense emission of $Er^{3+}$ was observed at 1530 nm region after the annealing of the film at $1050^{circ}C$ for 5 min. Channel waveguides were fabricated using such films for the core. The films containing Si higher than 2.4 at% exhibited the change in stress from compression to tension after annealing, which induced the fatal loss-increase in waveguide. The optical gain might be attained by the Er-doped waveguide with Si lower than 2.4 at% by a visible-light-excitation.

Interfacial Friction Factors for Air-Water Co-current Stratified Flow in Inclined Channels

  • Choi, Ki-Yong;No, Hee-Cheon
    • Proceedings of the Korean Nuclear Society Conference
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    • 1997.10a
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    • pp.481-486
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    • 1997
  • The interfacial shear stress is experimentally investigated for co-current air-water stratified flow in inclined rectangular channels having a length of 1854mm, width of 120mm and height of 40mm at almost atmospheric pressure. Experiments are carried out in several inclinations from $0^{\circ}\;up\;to\;10^{\circ}$. The local film thickness and the wave height are measured at three locations, i.e., L/H = 8,23, and 40. According to the inclination angle, the experimental data are categorized into two groups; nearly horizontal data group ($0^{\circ}\;{\leq}\;{\theta}\;{\leq}\;0.7^{\circ}$), and inclined channel data group ($0.7^{\circ}\;{\leq}\;{\theta}\;{\leq}\;10^{\circ}$). Experimental observations for nearly horizontal data group show that the flow is not fully developed due to the water level gradient and the hydraulic jump within the channel. For the inclined channel data group, a dimensionless wave height, $\Delta$h/h, is empirically correlated in terms of $Re_{G}$ and h/H. A modified root-mean-square wave height is proposed to consider the effects of the interfacial and wave propagation velocities. It is found that an equivalent roughness has a linear relationship with the modified root-mean-square wave height and its relationship is independent of the inclination.

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Interfacial shear stresses and friction factors in nearly-horizontal countercurrent stratified two-phase flow (근사수평 반류성층 2상유동에서의 계면전단응력 및 마찰계수)

  • 이상천;이원석
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.12 no.1
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    • pp.116-122
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    • 1988
  • Interfacial shear stresses have been determined for countercurrent stratified flow of air and water in a nearly-horizontal rectangular channel, based upon measurements of pressure drop, gas velocity profiles and mean film thickness. A dimensionless correlation for the interfacial friction factor has been developed as a function of the gas and liquid Reynolds numbers. Equivalent surface roughnesses for the interfacial friction factor have been calculated using the Nikuradse correlation and have been compared with the intensity of the wave height fluctuation on the interface. The results show that the interfacial shear stress is mainly affected by turbulent mixing near the interface due to the wave motion rather than by the roughened surface.