• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.7
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• pp.992-1000
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• 1998

In the present study the behavior of laminar-wavy film flowing down a vertical plate was studied analytically. The effects of film Reynolds number and interfacial shear stress on the mean film thickness, wave amplitude, wave length, and wave celerity were analysed. The anayltical results on the periodic-wave falling film showed good agreements with experimental data for Re < 100. As the film Reynolds number increased, mean film thickness, wave amplitude, and wave celerity increased, but wave length decreased. Depending on the direction of interfacial shear stress, the shape of wavy interface was disturbed significantly, especially for the intermediate-wave. As the interfacial shear stress increased, for the periodic-wave film, wave amplitude and wave celerity increased, but mean film thickness and wave length decreased.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.820-823
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• 2002

MEMS structures Generally have been fabricated using surface-machining, but the interface failure between silicon substrate and evaporated thin film frequently takes place due to difference of linear coefficient of thermal expansion. Therefore this paper studied the effect of the residual stress caused by variable external loads. This study did not analyzed accurate quantity of the residual stress but trend for the effect of residual stress. Several specimens were fabricated using other material(Al, Au and Cu) and thermal load was applied. The residual stress was measured by nano-indentation using AFM. The results showed the existence of the residual stress due to thermal load. The indentation area of the thermal loaded thin film reduced about 3.5% comparing with the virgin thin film caused by residual stress. The finite element analysis results are similar to indentation test.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.357-361
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• 2005

Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.793-798
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• 1995

The relaxation of the intrinsic stresses in the diamond films fabricated by the hot filament CVD was studied, and it was confirmed that the tensile intrinsic stresses in the films could be controlled without any degradation in the quality of the diamond films. The tensile intrinsic stresses in the films decreased from 2.97 to 1.42 GPa when the substrate thickness increased from 1 to 10mm. This result showed that the residual stress was affected by the substrate thickness as well as by the interaction between grains. Applying of ＋50 V between the W filament and the Si substrate during deposition, the tensile intrinsic stress in the film deposited at 0 V was decreased from 2.40 GPa to 0.71 GPa. Such large decrease in the tensile intrinsic stress was due to $\beta$-SiC which acted as a buffer layer for the stress relaxation. However, the application of the large voltage above ＋200V resulted in the change of quality of the diamond film, and nearly had no effect on relaxation in the tensile intrinsic stress.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.25-30
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• 2003

The total relaxed stress in annealing and the thermal strain/stress were obtained from the identification of the residual stress-free state using electronic speckle pattern interferometry (ESPI). The residual stress fields in case of both single and film/substrate systems were modeled using the thermo-elastic theory and the relationship between relaxed stresses and displacements. We mapped the surface residual stress fields on the indented bulk Cu and the 0.5 ${\mu}m$ Au film by ESPI. In indented Cu, the normal and shear residual stress are distributed over -1.7 GPa to 700 MPa and -800 GPa to 600 MPa respectively around the indented point and in deposited Au film on Si wafer, the tensile residual stress is uniformly distributed on the Au film from 500 MPa to 800 MPa. Also we measured the residual stress by the x-ray diffractometer (XRD) for the verification of above residual stress results by ESPI.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2533-2535
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• 1998

In this paper, an effect of drive-in process temperature on the residual stress profile of the p+ silicon film has been investigated. The residual stress profile has been calculated as the fourth-order polynomials. All coefficients of the polynomials have been determined from the measurement of the vertical deflections of the p+ silicon cantilevers with various thickness and the tip displacement of the p+ silicon rotating beam. From the determination results of the residual stress profile, the average stress of the film thermally oxidized at 1000 $^{\circ}C$ is 15 MPa and that of the film oxidized at 1100 $^{\circ}C$ is 25 MPa. The profile of the residual stress through the high temperature drive-in process has a steeper gradient than the other case.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.157-163
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• 2004

Dependence of residual compressive stress of diamond-like carbon (DLC) films on relative humidity was investigated. Polymeric, graphitic and diamond-like carbon films were prepared by r.f.-PACVD using methane or benzene with the negative self bias voltage of the substrate ranging from -100 to -800 V. In-situ measurements of the residual stress were carried out in an environment chamber where the relative humidity was varied from 10％ to 90％. In dense DLC film of high residual compressive stress and hardness, we could not observe any change in the residual compressive stress with relative humidity. However, in the cases of graphitic and polymeric DLC films, abrupt change in the residual stress occurred by changing the relative humidity. The quantity of the stress change was inversely proportional to the film thickness, which means that the stress change with humidity is not due to the penetration of the water molecule into the film structure, but due to surface interaction between water molecules and film surface.

• Journal of Surface Science and Engineering
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• v.47 no.6
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• pp.303-310
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• 2014

In this study, the average in-situ stress in metallic thin film was measured during deposition of the Cu thin films on the Si(111) wafer and then the phenomenon of stress shift by the interruption of deposition was measured using Cu thin films. We have observed the stress shift in accordance with changing amount of atom's movement between the surface and grain boundary through altering the grain size of the Cu thin film with variety of parameters. The grain size is known to be affected on the deposition rate, film thickness and deposition temperature. As a experimental results, the these parameters was not adequate to explain stress shift because these parameters affect directly on the amount of atom's movement between the surface and grain boundary as well as the grain size. Thus, we have observed the stress shift toward tensile side in accordance with the grain size changing through the interlayer deposition. From an experiment with inserting interlayer before deposit Cu, in thin film which has big grain size with high roughness, amount of stress movement is higher along direction of tensile stress after deposition that means, after deposition process, driving force of atoms moving in grain boundary and on the surface of the film is relatively higher than before.

• Journal of Surface Science and Engineering
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• v.43 no.3
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• pp.127-131
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• 2010

Adhesion of DLC film is very significant property that exhibits wear resistance, chemical inertness and high hardness when being deposited to metal substrate. This study was considered that change adhesion of DLC film produced by Plasma Enhanced Chemical Vapor Deposition can be presented through inserting interlayer (Cr, Si-C:H). The thickness of interlayer was result of changing adhesion and residual stress. It was showed that the maximum 12 N of adhesion is on DLC film of Cr interlayer, and that a tendency is to be increased residual stress depend on the thickness. DLC film of Si-C:H interlayer represented 16 N of adhesion at $1{\mu}m$, whereas adhesion is decreased when the thickness is increased. For the interlayer at multi-layer, it was the best that adhesion of Cr/Si-C:H/DLC film was 33 N. Si-C:H interlayer at DLC film controled adhesion of the whole film. It was relaxed the internal stress of DLC film produced by inserting Cr, Si-C:H interlayer.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.10
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• pp.1158-1162
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• 2009

Fatigue limit of the copper film coated by Sn was estimated using Goodman diagram and Gerber diagram. To obtain the high cycle fatigue life curve, S-N curve, of the film, the high cycle fatigue test was carried out by applying the constant amplitude load to the film specimen with three different stress ratio of 0.05, 0.3 and 0.5 and the frequency of 40 Hz at room temperature in air. The free-standing film specimen 15.26${\mu}m$ thick was fabricated by etching process. The fatigue limits and S-N curves at the respective stress ratios were determined from the experimental works. It was shown that the S-N curves were dependent on the stress ratio and the fatigue limit was increased with decreasing the stress ratio. The dependency of the fatigue behavior was presented in empirical relationship. Using these relationships, the fatigue limit was predicted.