• Title/Summary/Keyword: Film orientation

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Thermal Process Effects on Grain Size and Orientation in $(Bi,La)_4Ti_3O_{12}$ Thin Film Deposited by Spin-on Method (스핀 코팅법으로 증착한 $(Bi,La)_4Ti_3O_{12}$ 박막의 후속 열공정에 따른 입자 크기 및 결정 방향성 변화)

  • Kim, Young-Min;Kim, Nam-Kyeong;Yeom, Seung-Jin;Jang, Gun-Eik;Ryu, Sung-Lim;Kweon, Soon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.192-193
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    • 2006
  • A 16Mb ITIC FeRAM device was fabricated with BLT capacitors. The average value of the switchable 2 polarization obtained m the 32k-array (unit capacitor size: 068 ${mu}m^2$) capacitors was about 16 ${\mu}C/cm^2$ at 3V and the uniformity within an 8-inch wafer was about 2.8%. But a lot of cells were failed randomly during the measuring the bit-line signal of each cell. It was revealed that the Grain size and orientation of the BLT thin film were severely non-uniform. Therefore, the uniformity of the grain size and orientation was improved by changing the process conditions of post heat treatment. The temperature of nucleation step was the very effective on varying the microstructure of the BLT thin film. The optimized temperature of the nucleation step was $560^{\circ}C$.

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Crystallograpic Characteristic of $Co_{77}Cr_{20}Ta_{3}$ Thin Films by Two-Step Sputtering (Two-Step 스퍼터링 법에 의한 $Co_{77}Cr_{20}Ta_{3}$ 박막의 결정학적 특성)

  • Park, Won-Hyo;Lee, Deok-Jin;Park, Yong-Seo;Choi, Hyung-Wook;Son, In-Hwan;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.103-106
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    • 2002
  • We prepared $Co_{77}Cr_{20}Ta_{3}$ thin film with Facing Targets Sputtering Apparatus. which can deposit a high quality thin film CoCrTa magnetic layer for Perpendicular magnetic recording media. In order to obtain Good Crystal orientation of CoCrTa thin films. We prepared Thin Films on slide glass substrate. The thickness of Buffer-layer were varied from 10 to 50 nm and Magnetic layer thickness fixed 100[nm]. input current was varied from 0.2[A] to 0.5[A]. Substrate temperature was varied from room temperature to ${250^{\circ}C}$ respectively. The crystal orientation of the CoCrTa film were examined with XRD. Introduce Buffer-layer thin films showed improvement of dispersion angle of c-axis orientation (${\Delta\theta}_{50}$).

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Orientation of Evaporated Pentacene Molecules on Rubbed Polyvinylcinnamate Film (러빙한 Polyvinylcinnamate 필름 위에 종착된 Pentacene 분자의 배향)

  • Park, Sun-Hee;Song, Ki-Gook
    • Polymer(Korea)
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    • v.32 no.3
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    • pp.290-294
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    • 2008
  • Induction mechanism of molecular orientations for a rubbed polymer film as an alignment layer was investigated using polarized UV/Vis spectroscopic experiments for polyimide and polyvinylcinnamate whose conjugated electrons are located along main chain and side chain, respectively. By determining anisotropy formed in the rubbed film, LC director formed in the LC cell, and orientation direction of deposited pentacene molecules, it was found that LC orientation was induced mainly by molecular interactions whereas surface microgrooves formed by the rubbing process affect the orientation direction of deposited pentacene molecules.

A study on the crystalline orientation and electric properties of sol-gel PZT thin film for piezoelectric sensors (졸겔 법으로 제조한 압전 센서용 PZT 박막의 결정 배향 및 전기적 특성 연구)

  • Byun, Jin-Moo;Lee, Ho-Nyun;Lee, Hong-Kee;Lee, Seong-Eui;Lee, Hee-Chul
    • Journal of Sensor Science and Technology
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    • v.19 no.3
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    • pp.202-208
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    • 2010
  • This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti/$SiO_2$/Si substrates. The 1-${\mu}m$-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are $24.16\;{\mu}C/cm^2$, 2808, and 159 pC/N, respectively.

A Study on the Characteristics of TiN film deposited using Reactive Magnetron Sputter ion Plating (Reactive Magnetron Sputter ion Plating법으로 증착된 TiN 박막의 특성에 관한 연구)

  • 이민구;김흥회;김선재;이창규;김영석
    • Journal of Surface Science and Engineering
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    • v.33 no.2
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    • pp.115-125
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    • 2000
  • TiN films were deposited onto Stellite 6B alloy (Co base) by the reactive magnetron sputter ion plating. As the bias increases, TiN film changes from columnar structure to dense structure with great hardness and smooth surface due to densification and resputtering by ion bombardment. The content of oxygen and carbon impurities in the TiN film decreases greatly when the substrate bias is applied. The preferred orientation of the TiN films changes from (200) to (111) with decreasing $N_2$/Ar ratio, and from (200) to (111) and then (220) with increasing the substrate bias. The change of the preferred orientation is discussed in terms of surface energy and strain energy which are related to the impurity contents and the ion bombardment damage. The hardness of the TiN film increases with increasing compressive stress generated in the film by virtue of ion bombardment. It becomes as high as up to 3500kgf/mm$^2$ when an appropriate substrate bias is applied.

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Preparation AZO(ZnO:Al) thin film for FBAR by FTS method (대향타겟스퍼터링법에 의한 FBAR용 AZO(ZnO:Al) 전극의 제작)

  • Keum, M.J.;Shin, S.K.;Ga, C.H.;Chu, S.N.;Kim, K.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.172-175
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    • 2003
  • ZnO:Al thin film for application to FBAR's bottom electrode using ZnO piezoelectric thin film were prepared by FTS, in order to improve the crystallographic properties of ZnO thin films because the ZnO:Al thin film and ZnO thin films structure is equal each other. So we prepared the ZnO:Al thin film with oxygen gas flow rate. Thickness and c-axis preferred orientation and electric properties of ZnO:Al bottom electrode were evaluated by $\alpha$-step, XRD and 4-point probe..

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Epitaxial Growth of Polyurea Film by Molecular Layer Deposition

  • Choe, Seong-Eun;Gang, Eun-Ji;Lee, Jin-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.264.2-264.2
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    • 2013
  • Molecular layer deposition (MLD) is sequential, self-limiting surface reaction to form conformal and ultrathin polymer film. This technique generally uses bifunctional precursors for stepwise sequential surface reaction and entirely organic polymer films. Also, in comparison with solution-based technique, because MLD is vapor-phase deposition based on ALD, it allows epitaxial growth of molecular layer on substrate and is especially good for surface reaction or coating of nanostructure such as nanopore, nanochannel, nanwire array and so on. In this study, polyurea film that consisted of phenylenediisocyanate and phenylenediamine was formed by MLD technique. In situ Fourier Transform Infrared (FTIR) measurement on high surface area SiO2 substrate was used to monitor the growth of polyurethane and polyurea film. Also, to investigate orientation of chemical bonding formed polymer film, plan-polarized grazing angle FTIR spectroscopy was used and it showed epitaxial growth and uniform orientation of chemical bones of polyurea films.

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THE EFFECT OF PROCESS CONDITIONS ON THE PHYSICAL PROPERTIES OF SILVER FILMS PREPARED BY USING SPUTTERING ON POLYESTER SUBSTRATE

  • Hoang, Tae-Su;Ri, Eui-Jae
    • Journal of Surface Science and Engineering
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    • v.32 no.3
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    • pp.401-405
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    • 1999
  • Reflective silver films with high quality were prepared on polyester substrate by using sputter deposit on techniques. Best reflectivity thin films of silver were produced with process parameters of $10^{-6}$ Torr as base pressure, 50 W as R.F. power, 5 mTorr as working pressure, and 10 sccm as Ar flow rate. Being deposited with an R.F. power of 50 W, Ag films revealed the highest 96.3 % reflectance as illuminated with a light of 700 nm wavelength. The adhesion of sample films showed as high as 14 to $20{\;}kg/\textrm{cm}^2$, which is suitable for industrial purposes. Their film crystallinity and orientation resulted in the planes of (111) and (200) for the growth with a preferred orientation of <111>, in general. The cross-sections of thin film specimens showed columnar structures. It is noted that columns became coarsened and less dense as R.F. power increased, resulting in a low reflectivity for the product film.

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Identity and Construction in Postmodern Context of Art Film Blue is the Warmest Color

  • Li, Nan;Jung, Heonyong
    • International Journal of Advanced Culture Technology
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    • v.10 no.1
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    • pp.10-16
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    • 2022
  • This paper focuses on the aesthetic ideology and aesthetic style embodied in the work of 'Blue is the Warmest Color' to dissect it and examine the identity and construction of identity as a minority group in a postmodern context. Blue is the Warmest Color is a film that focuses on homosexual emotions in adolescent development, showing the budding love and emotional orientation of a 15-year-old girl's adolescence, and the ecstsy and torment that comes with an awakened consciousness. The evolutionary process of the characters' emotional orientations is dissected, pointing out that the central theme of the film is the concern for fluid identity and self-identity. Through the narrative and the setting of the characters' emotional patterns and the "Body Writing" of women, this paper further examine the typical variability and fragmentation of postmodern identity, and interpret in detail the content, messages and effects of the characters' dialogues in the film to illustrate the way in which the work expresses class and identity differences. The research method is based on textual analysis and theoretical research.

Deposition Characteristics of AlN Thin Films Prepared by RF Magnetron Sputtering (RF 마그네트론 스퍼터링에 의해 제조된 AlN 박막의 증착 특성)

  • Song, Jong-Han;Chun, Myoung-Pyo;Choi, Duck-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.12
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    • pp.969-973
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    • 2012
  • AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.