• Journal of Electrochemical Science and Technology
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• 제6권4호
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• pp.116-120
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• 2015

Lithium diffusivity of fluorine-free and -doped tin-nickel (Sn-Ni) film model electrodes with improved interfacial (solid electrolyte interphase (SEI)) stability has been determined, utilizing variable rate cyclic voltammetry (CV). The method for interfacial stabilization comprises fluorine-doping on the electrode together with the use of electrolyte including fluorinated ethylene carbonate (FEC) solvent and trimethyl phosphite additive. It is found that lithium diffusivity of Sn is largely dependent on the fluorine-doping on the Sn-Ni electrode and interfacial stability. Lithium diffusivity of fluorine-doped electrode is one order higher than that of fluorine-free electrode, which is ascribed to the enhanced electrical conductivity and interfacial stabilization effect.

• Corrosion Science and Technology
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• 제21권2호
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• pp.121-129
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• 2022

A study on water-based epoxy coated on mild steel using the electroplating method was conducted to optimize the process parameters for dry film thickness to achieve superior paint quality at optimal cost in an automotive plant. The regression model was used to adjust various parameters such as electrode voltage, bath temperature, processing time, non-volatile matter, and surface area to optimize the dry film thickness. The average dry film thickness computed using the model was in the range of 15 - 35 ㎛. The error in the computed dry film thickness with reference to the experimentally measured dry film thickness value was - 0.5809%, which was well within the acceptable limits of all paint shop standards. Our study showed that the dry film thickness on mild steel was more sensitive to electrode voltage and bath temperature than processing time. Further, the presence of non-volatile matter was found to have the maximum impact on dry film thickness.

• 한국환경과학회지
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• 제5권5호
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• pp.593-603
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• 1996

용응탄산염 연료전지의 산소전극성능모사를 위한 이중기공구조의 filmed agglomerate model을 연구하였다. 이 모델에서는 전극과 전해질 계면의 물리, 화학적인 현상 및 전극반응기구를 고려하여 정상상태 에서 전극의 특성을 조업조건에 따라 표시할 수있다. 기존의 연구에서 기하학적인 구조를 가정하여 전극반응면적을 이론적으로 계산한 반면에 본 연구에서는 porosimeter를 이용한 기공도와 기공구조 분포 측정자료를 이용한 방법을 제시하였다. 계산결과는 전극재질, 기체조성, 전극두께, agglomerate 기공도 및 전해질 막의 두께에 따른 영향을 전류밀도와 과전압의 관계로 표시하였다. 또한 전극 재질로 perovskite (La0.8Sr0.2CoO3)와 NiO를 사용하여 실제전지를 이용한 성능을 측정하여 이론치와 비교하였다. 두전 극의 반쪽전지 실험에서 유사한 성능을 나타내었다. Perovskite 전극은 전극 기공도 65%, agglomerate 기공도 12% 그리고 전극두께 1.5~2mm에서 최적의 결과를 보여주었다. NiO전극의 경우 peroxide 반응기구에서 superoxide 반응기구의 계산결과보다 실험치와 일치하는 좋은 결과를 보였다.

• Corrosion Science and Technology
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• 제14권6호
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• pp.261-266
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• 2015

The capacity of passive metal to repassivate after film damage determines the development of local corrosion and the resistance to corrosion failures. In this work, the repassivation kinetics of 316L stainless steel (316L SS) was investigated in borate buffer solution (pH 9.1) using a novel abrading electrode technique. The repassivation kinetics was analyzed in terms of the current density flowing from freshly bare 316L SS surface as measured by a potentiostatic method. During the early phase of decay (t < 2 s), according to the Avrami kinetics-based film growth model, the transient current was separated into anodic dissolution ($i_{diss}$) and film formation ($i_{film}$) components and analyzed individually. The film reformation rate and thickness were compared according to applied potential. Anodic dissolution initially dominated the repassivation for a short time, and the amount of dissolution increased with increasing applied potential in the passive region. Film growth at higher potentials occurred more rapidly compared to at lower potentials. Increasing the applied potential from 0 $V_{SCE}$ to 0.8 $V_{SCE}$ resulted in a thicker passive film (0.12 to 0.52 nm). If the oxide monolayer covered the entire bare surface (${\theta}=1$), the electric field strength through the thin passive film reached $1.6{\times}10^7V/cm$.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2000년도 종합학술발표회 논문집 Vol.10 No.1
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• pp.95-98
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• 2000

Film bulk acoustic resonator used in microwave region can be analyzed by one-dimension Mason's model and one-dimensional numerical method, but it had several constraints to analyze effects of area variation, electrode-area variation, electrode-shape variation and spurious characteristics. To overcome these constraints film bulk acoustic resonator must be analysed by three dimensional numerical method. So, in this paper three dimensional finite element method was used to analyze several moles of resonance and was compared with the one dimension Mason's model analysis and analytic solution.

• 대한기계학회논문집A
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• 제27권6호
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• pp.849-856
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• 2003

A three-dimensional constitutive model for polarization switching in ferroelectric materials is used to predict the formation of switching zones in an atomic force microscopy(AFM) tip/ferroelectric thin film/bottom electrode system via finite element simulation. Initially the ferrolectric film is poled upward and the bottom electrode is grounded. A strong dc field is imposed on a fixed point of the top surface of the film through the AFM tip. A small switching zone with downward polarization is nucleated and grows with time. It is found that initially the shape of the switched zone is that of a bulgy dagger, but later turn to the shape of a reversed cup with the lower part wider than the upper part. It can also be concluded that the size of switching zones increases with the period of applied electric potential. The present results are qualitatively consistent with experimental observations.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.696-699
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• 2003

본 연구에서는 MDFM (Metal-Dielectric-ferroelectric-Metal) 구조의 강유전체 캐패시터와 수정된 Sawyer-Tower 회로를 접목시켜 강유전체의 이력곡선을 정밀하게 계산하기 위한 모델을 제시하였다. 본 모델은 스위칭 쌍극자 분극의 수학적 표현을 수치적분 알고리즘에 적용하였으며, 강유전체와 하부전극사이에 dielectric 층을 포함시켜 피로특성을 고려할 수 있다. 본 모델의 예측치를 PLT(10) 강유전체 박막의 측정결과와 비교하여 본 모델의 유효성을 입증하였다.

• Bulletin of the Korean Chemical Society
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• 제23권5호
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• Journal of Electrochemical Science and Technology
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• 제4권3호
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• pp.108-112
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• 2013

Lithium diffusivity of the silicon (Si)-based materials of Si-Cu and $SiO_x$ (x = 0.4, 0.85) with improved interfacial stability to electrolyte have been determined, using variable rate cyclic voltammetry with film model electrodes. Lithium diffusivity is found to depend on the intrinsic properties of anode material and electrolyte; the fraction of oxygen for $SiO_x$ (x = 0.4, 0.85), which is directly related to electrical conductivity, and the electrolyte type with different ionic conductivity and viscosity, carbonate-based liquid electrolyte or ionic liquid-based electrolyte, affect the lithium diffusivity.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.191-194
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• 1999

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET (Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. We show net switching current decreases due fatigue in the switching model. It indicates that oxygen vacancy strongly suppresses polarization reversal. The difference of saturation drain current of the device before fatigue is shown by the dual threshold voltages in I$_{D}$-V$_{D}$ curve as 6㎃/$\textrm{cm}^2$ and decreases as much as 50% after fatigue. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.lms.