• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.5
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• pp.628-636
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• 1997

Flow visualization technique incorporating photochromic dye is used to study the flow characteristics of the gravity driven laminar wavy film. The film thickness and wave speed are successfully measured by flow visualization. As the inclination angle increases, the waves have higher peaks and lower substrate thickness. The measured cross stream velocity at the free surface is up to 10% of stream wise velocity, which shows enhanced mixing in the lump of the film. The measured stream wise velocity profiles are close to parabolic profile near the substrate and the peak but show significant velocity defect near the rear side of the wave. The measured wall shear rate distributions show good agreement with the previous workers' numerical results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.346-349
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• 2001

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of diamond like carbon (DLC) thin film. A high pretilt angle of about 4$^{\circ}$ was measured by ion beam(IB) exposure on the DLC thin film surface. A good LC alignment was observed by the IB alignment method on the DLC thin film surface at annealing temperature of 200$^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of 220$^{\circ}C$ . Consequently, the high NLC pretilt angle and the good thermal stability of LC alignment can be achieved by the IB alignment method on the DLC thin film surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.419-422
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• 2002

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a diamond like carbon (DLC) thin film. A high pretilt angle of about $3.5^{\circ}$ by ion beam(IB) exposure on the DLC thin film surface was measured. A good LC alignment by the IB alignment method on the DLC thin film surface was observed at annealing temperature of $200^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of $220^{\circ}C$. Consequently, the high NLC pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the DLC thin film surface can be achieved.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.129-134
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• 2004

The development of fabrication processes of polycrystalline-silicon-thin-film transistors (poly-Si TFTs) at low temperatures is reviewed. Rapid crystallization through laser-induced melt-regrowth has an advantage of formation of crystalline silicon films at a low thermal budget. Solid phase crystallization techniques have also been improved for low temperature processing. Passivation of $SiO_2$/Si interface and grain boundaries is important to achieve high carrier transport properties. Oxygen plasma and $H_2O$ vapor heat treatments are proposed for effective reduction of the density of defect states. TFTs with high performance is reported.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.329-329
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• 2016

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

• Proceedings of the Korea Multimedia Society Conference
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• 2001.11a
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• pp.210-214
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• 2001

PCB관련 제품의 최종 제작단계에서 defect 검사 과정은 제품의 질을 유지하기 위해 필수적인 단계이다. PCB 자동화 검사 시스템은 사람에 의해 이루어지는 품질검사에서 발견되는 비용을 절감하고, 신뢰성있는 제작 프로세스를 유지하기 위해 적극적으로 개발되고 있다. 이 논문에서는 PCB 필름의 defect를 검사하기 위하여 적응적 템플렛 기반 검사 방법을 제시하고자 한다. 고정된 템플릿은 구현하기 편리하고 속도면에서 이점을 발휘할 수 있으나, 강력한 센서의 선택에 제약이 있을 환경 하에서 100%에 근접하는 오류검출률 defect detection rate이 요구되는 고정된 템플릿을 제작하는 것에 문제가 있을 수 있다. 여기서는 템플릿 모델에 유연성을 부여하기 위하여 템플릿의 이미지를 목표 이미지들의 상태에 따라 템플릿을 적응적으로 구축하여 검사과정에 동적으로 적용하는 기법을 개발하고자 한다.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.113-117
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• 2021

A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 1.5~3.5 wt % PVP GQD, Vf changed from 2.16 ~ 2.72 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. The Al + ions are reduced and the device dominates at low resistance. In addition, as the PVP GQD concentration increased, the depth of the interfacial defect decreased, and the repetition of appropriate electrical properties was confirmed through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.3
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• pp.472-479
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• 2013

We carried out research into an environmentally friendly injection molding process that involves filling the mold with polymer after thin films are fixed into the cavity, without the coating, plating process. Film insert injection molding is a new technique in which molten plastic resin is injected into the cavity after films are precisely attached to the side of the mold wall. In the film insert injection molding process, the insert film is moved by the flow of the molten plastic resin. Overlap defects cause a decline in the productivity and the quality of the manufactured goods. To reduce overlap defects, new injection mold parts are proposed to produce automotive exterior parts using thin films. It is suggested that the best possible method would be to fix the thin films to one side of the mold wall, and develop interior pins to fix the films in the mold. Based on this new pin fixing system, the problem of the film being moved by the flow of the molten resin was improved.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2000.04a
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• pp.585-590
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• 2000

Recently, It is gradually raised necessity that thickness of thin film is measured accuracy and managed in industrial circles and medical world. Ultrasonic Signal processing method is likely to become a very powerful method for NDE method of detection of microdefects and thickness measurement of thin film below the limit of Ultrasonic distance resolution in the opaque materials, provides useful information that cannot be obtained by a conventional measuring system. In the present research, considering a thin film below the limit of ultrasonic distance resolution sandwiched between three substances as acoustical analysis model, demonstrated the usefulness of ultrasonic Signal processing technique using information of ultrasonic frequency for NDE of measurements of thin film thickness, sound velocity, and step height, regardless of interference phenomenon. Numeral information was deduced and quantified effective information from the image. Also, pattern recognition of a defected input image was performed by neural network algorithm. Input pattern of various numeral was composed combinationally, and then, it was studied by neural network. Furthermore, possibility of pattern recognition was confirmed on artifical defected input data formed by simulation. Finally, application on unknown input pattern was also examined.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.180-182
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• 1990

Today, according to the temperature lowering of VLSI technology which have been required, the new thin film technology of low temperature have appeared. Plasma CVD method, one of low temperature technologies, have major problems with many interface trap defects. In this paper, we prepared ammonia free SiN film containing small H that acts as a defect impurity, and investigated the electrical properties of Laser assisted deposition film.