• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.489-492
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• 2000

Film Bulk Acoustic Wave Resonator(FBAR) used in microwave region was analyzed with Finite Difference Time-Domain Methods(FDTD) in this paper. FBAR have been analyzed with one dimensional Mason model analysis or Finite Element methods(FEM), but the first couldn't analyze effect of area variation and spurious characteristics, the second had difficulty in element separation because of thin electrode. So in this paper FBAR was analyzed by Finite Difference Time-Domain Methods and it's results were transformed to frequency domain using Discrete Fourier Transform.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.3
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• pp.10-17
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• 2003

In this paper, genetic algorithm (GA)-based Thin Film Bulk Acoustic Resonator (FBAR) RF filter design technique is proposed. Since the BVD(Butterworth-Van Dyke) lumped element model is valid only around the resonance, FBAR filter design technique based on BVD circuit has an approximate error. Instead of using BVD model, optimizing filter design method utilizes an analytical electrical impedance equation of FBAR. The geometry of FBAR such as thickness of the piezoelectric layer and area which significantly affect the filter response is optimized by GA. US-PCS Rx Bandpass filter obtained by the proposed technique shows a better response comparing with the typical and BVD-based filter.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.7
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• pp.1321-1325
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• 2001

In this article, piezoelectric films and their application for film bulk acoustic resonator (FBAR) devices are presented. The FBAR is composed of piezoelectric film sandwiched between top and bottom electrodes and an acoustic reflector of SiO2/W stacked multilayers. Various FBAR devices were fabricated and evaluated through simulation and measurement. The insertion loss, return loss and Q-factor were observed to be reasonably high and good. The FBAR technology seems very promising particularly for RF band filter application.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.621-625
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• 2001

In this article, piezoelectric films and their application for film bulk acoustic resonator (FBAR) devices are presented. The FBAR is composed of piezoelectric film sandwiched between top and bottom electrodes and an acoustic reflector of SiO$_2$/W slatted multilayers. Various FBAR devices were fabricated and evaluated through simulation and measurement. The insertion loss, return loss and Q-factor were observed to be reasonably high and good. The FBAR technology seems very promising particularly for RF band filter application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.152-155
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• 2007

In this study, we fabricated FBAR(film bulk acoustic resonator) by using $Li_{2}CO_{3}:ZnO$ as a function of annealing temperature and concentrated on effect of frequency characteristic of FBAR. The results show that the annealing affects resistivity and crystallity. The optimum properties were observed for film annealed at $500^{\circ}C$. The resistivity was $1.5{\times}10^{11}\;{\Omega}{\cdot}cm$ and the roughness was 21.10 nm. And the return loss is improved from -24.9 at $300^{\circ}C$ to -29.8 at $500^{\circ}C$ without the resonant frequency change. We finally confirmed the improvement on the frequency characteristics of FBAR device by annealing process at the optimized condition.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.915-920
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• 2007

AIN-based film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration such as Mo/AIN/bottom-metal/Si are fabricated by employing a novel process. The proposed resonator structure does not require any supporting layer above the substrate, which leads to the reduction in energy loss of the resonators. For all the FBAR devices, the frequency response characteristics are measured and the device parameters, such as return loss and input impedance, are extracted from the frequency responses, and analyzed in terms of the various metals such as Al. Cu, Mo, W used in the bottom-electrode. The mass-loading effect caused by the used bottom-electrode metals is found to be the main reason for the difference revealed in the measured characteristics of the fabricated FBAH devices. The results obtained in this study also show that the degree of match in lattice constant and thermal expansion coefficient hetween piezoelectric layers and electrode metals is crucial to determine the device performance of FEAR.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.57-60
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• 2003

This paper describes the modeling and simulation results for film bulk acoustic resonators(FBAR). We present the frequency tuning mechanisms, analytical solutions of the wave equation and the influence of the thickness of the electrodes. The impedance for PZT based FBAR is derived utilizing proper boundary conditions and their material parameters. Ferroelectrics-based RF filter composed of FBARs are designed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.59-62
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• 2008

In this paper, we study ZnO-based a film bulk acoustic resonator (FBAR) using a multi-layered Bragg reflector. We insert chromium adhesion layers of 0.03 mm-thick to the Bragg reflector and improve the performance using thermal treatments. At operating frequency about 2.5 GHz, excellent resonance characteristics are observed in terms of good return loss and high quality factor.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.56-56
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• 2003

최근 정보통신 분야의 급격한 발달로 인하여 무선통신에 사용되는 주파수 영역 또한 계속 높아짐에 따라 대역통과 필터 소자의 삽입 손실, 소비 전력, 크기, MMIC화에 대한 많은 연구가 진행되고 있다 압전 현상을 이용한 박막형 공진기가 이러한 요구를 충족시키고, 현재의 SAW filter를 대체할 소자로 떠오르고 있다. 본 실험에서는 단결정 미세 구조를 만들 수 있고, 압전 효과 또한 우수하며, Surface Micromachining보다 비교적 제조 공정이 간단하고 선택적 에칭이 가능한 Bulk Micromachining을 이용하여 Si$_3$N$_4$ Membrane을 이용한 중심주파수 5.2GHz인 두께 진동모드 Film Bulk Acoustic Wave Resonator(FBAR)를 제작하고 공진기의 고주파 특성을 평가하였다. Membrane구조 형성을 위해 Backside면인 Si$_3$N$_4$, Si은 RIE(Reactive Ion Etching)와 선택적 에칭용액인 KOH로 각각 에칭하여 Membrane을 갖는 구조로 중심주파수 5.2GHz인 두께 진동모드 FBAR를 설계 및 제조하였다. 체적 탄성파 공진 현상은 r.f Magnetron Sputtering법으로 증착한 AIN 압전박막과 Mo전극으로부터 발생 가능하였다. 본 연구에서는 0.9$\mu\textrm{m}$-Si$_3$N$_4$ Membrane을 이용해 FBAR를 제작/평가하고, RIE을 통해 Membrane을 제거해 가면서 공진기의 특성 즉, Quality factor와 유효전기기계결합계수(K$_{eff}$) 및 S parameter특성을 비교 측정해 보았다. 측정해본 결과 Membrane Free일때가 훨씬더 공진 특성이 우수함을 볼 수 있다

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.95-98
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• 2000

Film bulk acoustic resonator used in microwave region can be analyzed by one-dimension Mason's model and one-dimensional numerical method, but it had several constraints to analyze effects of area variation, electrode-area variation, electrode-shape variation and spurious characteristics. To overcome these constraints film bulk acoustic resonator must be analysed by three dimensional numerical method. So, in this paper three dimensional finite element method was used to analyze several moles of resonance and was compared with the one dimension Mason's model analysis and analytic solution.