• 분석과학
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• 제8권4호
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• pp.663-668
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• 1995

Ion transport of a polypyrrole/chloride (PPy/Cl) film and a polypyrrole/poly(styenesulfonate) (PPy/PSS) film as a function of applied dc potential was investigated by employing electrogravimetric impedance technique and electrochemical impedance technique. The cation and anion contribution to the whole charge capacitance and the diffusion coefficients of cation and anion in a PPy/PSS film were calculated by fitting the electrogravimetric impedance data with proposed model circuit. The diffusion coefficients of $Na^+$ in a 1 M $NaClO_4$ solution are over 1 order of magnitude larger than those of $ClO{_4}^-$, and $ClO{_4}^-$ contribution to charge compensation decreases as dc potential lowers. The charge compensation of a PPy/Cl film ir a 1 M CsCl solution is carried out largely by $Cl^-$ at 0.2 V vs. Ag/AgCl and by $Cs^+$ as well as $Cl^-$ at -0.4 V.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.117-123
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• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2007년도 하계종합학술대회 논문집
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• pp.353-354
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• 2007

This paper proposes the method which estimates the pointing region at the real world. This paper uses the technique to easily calibrate a camera of Z. Zhang. First, we calculate the projection matrix of each camera by the technique. Next, we estimate the location of the shoulder and the fingertip. Then we compute the pointing region in 3D real world by using projection matrix of each camera. Experiment result showed that the error between estimated point and the plane center point is less than 5cm.

• Nuclear Engineering and Technology
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• 제53권8호
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• pp.2464-2476
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• 2021

Direct-contact heat transfer of a single saturated droplet upon colliding with a heated wall in the regime of film boiling was experimentally investigated using high-resolution infrared thermometry technique. This technique provides transient local wall heat flux distributions during the entire collision period. In addition, various physical parameters relevant to the mechanistic modelling of these phenomena can be measured. The obtained results show that when single droplets dynamically collide with a heated surface during film boiling above the Leidenfrost point temperature, typically determined by droplet collision dynamics without considering thermal interactions, small spots of high heat flux due to localized wetting during the collision appear as increasing We_n. A systematic comparison revealed that existing theoretical models do not consider these observed physical phenomena and have lacks in accurately predicting the amount of direct-contact heat transfer. The necessity of developing an improved model to account for the effects of local wetting during the direct-contact heat transfer process is emphasized.

• Journal of Mechanical Science and Technology
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• 제17권11호
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• pp.1704-1713
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• 2003

Point contact film thickness in elastohydrodynamic lubrication (EHL) is analyzed by image processing method for the images from an optical interferometer with monochromatic incident light. Interference between the reflected lights both on half mirror Cr coating of glass disk and on super finished ball makes circular fringes depending on the contact conditions such as sliding velocity, applied load, viscosity-pressure characteristics and viscosity of lubricant under ambient pressure. In this situation the film thickness is regarded as the difference of optical paths between those reflected lights, which make dark and bright fringes with monochromatic incident light. The film thickness is computed by numbering the dark and bright fringe orders and the intensity (gray scale image) in each fringe regime is mapped to the corresponding film thickness. In this work, we developed a measuring technique for EHL film thickness by dividing the image patterns into two typical types under the condition of monochromatic incident light. During the image processing, the captured image is converted into digitally formatted data over the contact area without any loss of the image information of interferogram and it is also interpreted with consistency regardless of the observer's experimental experience. It is expected that the developed image processing method will provide a valuable basis to develop the image processing technique for color fringes, which is generally used for the measurement of relatively thin films in higher resolution.

• Current Optics and Photonics
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• 제1권5호
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• pp.505-513
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• 2017

Measuring the thickness of thin films is strongly required in the display industry. In recent years, as the size of a pattern has become smaller, the substrate has become larger. Consequently, measuring the thickness of the thin film over a wide area with low spatial sampling size has become a key technique of manufacturing-yield management. Interferometry is a well-known metrology technique that offers low spatial sampling size and the ability to measure a wide area; however, there are some limitations in measuring the thickness of the thin film. This paper proposes a method to calculate the thickness of the thin film in the following two steps: first, pre-estimation of the thickness with the phase at the peak position of the interferogram at the bottom surface of the thin film, using white-light phase-shift interferometry; second, accurate correction of the measurement by fitting the interferogram with the theoretical pattern through the estimated thickness. Feasibility and accuracy of the method has been verified by comparing measured values of photoresist pattern samples, manufactured with the halftone display process, to those measured by AFM. As a result, an area of $880{\times}640$ pixels could be measured in 3 seconds, with a measurement error of less than 12%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.356-356
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• 2007

Plasma immersion ion beam deposition (PIIBD) technique is a cost-effective process for the deposition of diamond like carbon thin film, the possible solid lubricant on large surface and a complex shape. We used PIIB process for the preparation of DLC thin film on $Al_2O_3$ with deposition conditions of deposition temperature range $200^{\circ}C$, working gas pressure of 1.310-1Pa. DLC thin films were coated by $C_2H_2$ ion beam deposition on $Al_2O_3$ after the ion bombardment of SiH4 as the bonding layer. Energetic bombardment of $C_2H_2$ ions during the DLC deposition to ceramic materials generated mixed layers at the DLC-Si interface which enhanced the interface to be highly bonded. Wear test showed that the low coefficient of friction of around 0.05 with normal load 2.9N and proved the advantage of the low energy ion bombardment in PIIBD process which improved the tribological properties of DLC thin film coated alumina ceramic. Furthermore, PIIBD was recognized as a useful surface modification technique for the deposition of DLC thin film on the irregular shape components, such as molds, and for the improvement of wear and adhesion problems of the DLC thin film, high temperature solid lubricant.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

• 한국자기학회지
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• 제21권5호
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• pp.185-192
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• 2011

박막제조 기술은 과학 기술의 기초가 되는 분야로 양질의 박막을 제조하기 위한 다양한 노력이 경주되고 있다. 박막제조는 표면개질과 함께 표면처리 기술의 한 분야이며 이중 진공증착으로 알려진 물리증착법과 화학증착법은 현대의 과학기술 연구는 물론 산업적으로 폭넓게 이용되는 박막제조 기술 중의 하나이다. 진공증착을 이용한 박막제조 기술은 나노 기술의 등장과 함께 비약적인 발전을 이루었으며 자연모사와 완전화 박막의 제조, 융복합 공정을 이용한 기능성 코팅과 Engineered Structure 구현 그리고 초고속 증착과 원가 저감 기술의 실현이 주요 이슈로 등장하고 있다. 본 논문에서는 물리증착법과 화학증착법을 중심으로 박막제조 기술의 종류와 원리를 설명하고 박막제조 기술의 최신 동향과 기술적 이슈 및 향후 전망에 대해 기술한다.

• 한국재료학회지
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• 제25권1호
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• pp.54-59
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• 2015

Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a $90^{\circ}$ glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at $0^{\circ}$. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.