• Title/Summary/Keyword: Film Information

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Indium Tin Oxide (ITO) Thin Film Fabricated by Indium-Tin-Organic sol with ITO Nanoparticle at Low Temperture

  • Hong, Sung-Jei;Chang, Sang-Gweon;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1334-1338
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    • 2006
  • In this work, indium tin oxide (ITO) thin film was fabricated by indium-tin-organic sol including ITO nanoparticle. ITO nanoparticle showed ultrafine size about 5 nm and (222) preferred crystal structure. Also, ITO sol-gel thin film showed good optical transmittance over 83% and electrical resistance less than $7\;{\times}\;10^3\;{\Omega}$.

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Sol-Gel Processing for Preparation of Metal Oxide Films

  • Korobova Natalya;Soh, Dea-Wha
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.259-264
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    • 2000
  • Systematic research of metal alkoxide electrophoretic deposition has been developed. The formation mechanism of electrophoretic deposits has been offered. The structure study of dry and heat-treated electrophoretic deposits has been established. The concrete examples of one and bi-component oxide thin film formation were considered. The new approaches for thin film technology have developed on various substrates of different shapes and sizes. The correlation between thin film structure, mechanism of their formation, and physico-chemical properties has been determined.

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Multi Fingertip Detection Method (다중 손끝점 검출 기법)

  • Yu, Sunjin;Koh, Wan Ki;Kim, Sang Hoon
    • Proceedings of the Korea Information Processing Society Conference
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    • 2013.11a
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    • pp.1718-1720
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    • 2013
  • 본 논문에서는 다중 손 끝점 검출을 위해 특징 추출 기법 및 이를 기반으로 한 손 끝점 검출 알고리즘을 제안한다. 특징 추출을 위해 Local Binary Feature(LBP)을 사용하였고 특징의 차원을 축소하기 위해 Principal Component Analysis(PCA) 기법을 이용하였다. 손 끝점 판별을 위해 Reduced multivariate polynomial Model(RM) Classifier를 사용하여 실험 결과 제안된 손 끝점 검출 기법이 다양한 환경에서 동작 하는 것을 확인 하였다.

The novel encapsulation method for organic thin-film transistor (새로운 방식의 유기박막트랜지스터 패시베이션 기술)

  • Lee, Jung-Hun;Kim, Seong-Hyun;Kim, Ki-Hyun;Lim, Sang-Chul;Cho, Eu-Na-Ri;Jang, Jin;Zyung, Tae-Hyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.177-180
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    • 2004
  • In this study, we report a novel encapsulation method for longevity of an organic thin-film transistor (OTFT) using pentaceneby means of an adhesive multiplayerincluded Al film. For encapsulation of OTFTs, the Al film adhered onto the OTFT in a dry nitrogen atmosphere using a proper adhesive. A lifetime, which was defined as the time necessary to reduce mobility to 2% of initial mobility value, was observed from the typical $I_{D-VD}$ characteristics of the field-effect transistor (FET). The initial field effect mobility ${\mu}$ was measured to be $2.0{\times}10^{-1}\;cm^2/Vs$. The characterization was maintained for long times in air. No substantial degeneration occurred. The performance and the stability are probably due to the encapsulation effect.

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Microcrystalline Silicon Film Growth on a Fluoride Film Coated Glass Substrate

  • Kim, Do-Young;Park, Joong-Hyun;Ahn, Byung-Jae;Yoo, Jin-Su;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.526-529
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    • 2002
  • Various fluoride films on a glass substrate were prepared and characterized in order to determine the best seed layer for a microcrystalline silicon (${\mu}c$-Si) film growth. Among the various group-IIA-fluoride systems, the $CaF_2$films on glass substrates illustrated (220) preferential orientation and a lattice mismatch of less than 0.7% with Si. $CaF_2$ films exhibited a dielectric constant between $4.1{\sim}5.2$ and an interface trap density ($D_{it}$ as low as $1.8{\times}10^{11}\;cm^{-2}eV^1$. Using the $CaF_2$/glass structure, we were able to achieve an improved ${\mu}c$-Si film at a process temperature of 300 $^{\circ}C$. We have achieved the ${\mu}c$-Si films with a crystalline volume fraction of 65%, a grain size of 700 ${\AA}$, and an activation energy of 0.49 eV.

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High temperature poly-Si thin film transistors on a molybdenum substrate

  • Kim, Do-Young;Gangopadhyay, Utpal;Park, Joong-Hyun;Ko, Jae-Kyung;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.523-525
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    • 2002
  • The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.

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Analysis of the Film's Promotional Website - Focus on Motion Graphic (모션그래픽 활용을 중심으로 영화홍보 웹사이트 분석)

  • Min, Jang-Geun;Han, Sang-Hoon
    • Journal of the Korea Society of Computer and Information
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    • v.19 no.7
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    • pp.27-35
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    • 2014
  • Motion Graphic developed in the visual fields such as film and TV is widely used from the fields of arts such as applied paintings to interactive media such as web sites. In particular, Motion Graphic is actively used in the film's promotion websites with the form of a mixture between characteristics of visual media and characteristics of websites. In this study, we analyze the characteristics of film's promotion websites, investigate previous studies for Motion Graphic analysis. And present a model for the analysis of websites including visual elements, media elements and motion elements as main elements. We select some of promotion websites for films among 2013 domestic hot films, carry out a case analysis, and present the direction of development on the base of the results.

Synthesis and Properties of Nickel Complexes for the Thermal Shielding Film (열선 차단 필름용 니켈 착화합물의 합성과 특성)

  • Kwak, Seon-Yeep;Le, Tae-Hoon;Son, Se-Mo
    • Journal of the Korean Graphic Arts Communication Society
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    • v.24 no.2
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    • pp.49-59
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    • 2006
  • In this paper, a transparent film exposed the effect of heat cut-off, reveal as means of the prevention to wrong operation of parts of display and forgery of the credit card, also it will intercept rising of the temperature in interior of a room and car by diminish the influx of near-infrared ray wavelength of solar energy come from the window. As in the past a film which absorb a wavelength of $800{\sim}2500nm$ in near-infrared ray, manufactured in physical vapor deposition(PVD), chemical vapor deposition(CVD) to using ATO, ITO of inorganic materials or sputtering method. but it has lots of problem in manufacture. On the other hand, recently a paper said it easily form a transparent film to using organic dye. This paper show synthesis of many derivatives used in Ni-complex and then it investigate to optical property and durability of flim by make the transparent film.

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A Study on the Surface Structure by Fabrication Method of Organic Thin Film (유기박막의 제작방법에 따른 표면구조에 관한 연구)

  • Choi, Young-Il;Kim, Byung-Geun;Chon, Dong-Kyu;Kim, Young-Keun;Lee, Kyung-Sup
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1580-1582
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    • 2003
  • Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic thin film that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. In this paper Langmuir (L) that is one of basis technology to manufacture of organic matter device using Biology material PBDG that is kind of polypeptide that have Biology adaptedness. Detected of accumulation condition in observing Surface Pressure change by stimulus reaction of Langmuir (L) and Spin-Coating film. Therefore AFM by this confirm and compared.

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Growth of the single and epitaxial MgO film on Fe(001)

  • Kim, Hi-Dong;Dugerjav, Otgonbayar;Seo, Jae-M.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.355-355
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    • 2010
  • The epitaxial growth of MgO film on Fe(001) has been investigated by scanning tunneling microscopy (STM). After confirming the clean Fe(001)-c($2{\times}2$) substrate by STM, Mg was deposited at room temperature (RT) under $O_2$ partial pressure of $10^{-7}\;Torr$. The MgO was grown as clusters, not as an epilayer even after postannealing at $400^{\circ}C$, as shown in Figure (a). On the contrary, when Mg was deposited on Fe(001)-c($2{\times}2$) at RT and post-oxidized through exposing $O_2$ at partial pressure $10^{-7}\;Torr$, the thin-layered film with some clusters was formed. Extended-annealing at $400^{\circ}C$ reduced the cluster density, and finally the single and epitaxial MgO-c($2{\times}2$) film was formed on Fe(001)-c($2{\times}2$) as shown in Figure (b). This ultrathin MgO film formed on Fe is expected to be applied to many technological applications, such as catalysis, microelectronics, and magnetic devices.

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