• Title/Summary/Keyword: Film Information

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Effects of thin-film thickness on device instability of amorphous InGaZnO junctionless transistors (박막의 두께가 비정질 InGaZnO 무접합 트랜지스터의 소자 불안정성에 미치는 영향)

  • Jeon, Jong Seok;Jo, Seong Ho;Choi, Hye Ji;Park, Jong Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.9
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    • pp.1627-1634
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    • 2017
  • In this work, a junctionless transistor with different film thickness of amorphous InGaZnO has been fabricated and it's instability has been analyzed with different film thickness under positive and negative gate stress as well as light illumination. It was found that the threshold voltage shift and the variation of drain current have been increased with decrease of film thickness under the condition of gate stress and light illumination. The reasons for the observed results have been explained by stretched-exponential model and device simulation. Due to the reduced carrier trapping time with decrease of film thickness, electrons and holes can be activated easily. Due to the increase of vertical channel electric field reaching the back interface with decrease of film thickness, more electrons and holes can be accumulated in back interface. When one decides the film thickness for the fabrication of junctionless transistor, the more significant device instability with decrease of film thickness should be consdered.

Characterization of gate oxide breakdown in junctionless amorphous InGaZnO thin film transistors (무접합 비정질 InGaZnO 박막 트랜지스터의 게이트 산화층 항복 특성)

  • Chang, Yoo Jin;Seo, Jin Hyung;Park, Jong Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.22 no.1
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    • pp.117-124
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    • 2018
  • Junctionless amorphous InGaZnO thin film transistors with different film thickness have been fabricated. Their device performance parameters were extracted and gate oxide breakdown voltages were analyzed with different film thickness. The device performances were enhanced with increase of film thickness but the gate oxide breakdown voltages were decreased. The device performances were enhanced with increase of temperatures but the gate oxide breakdown voltages were decreased due to the increased drain current. The drain current under illumination was increased due to photo-excited electron-hole pair generation but the gate oxide breakdown voltages were decreased. The reason for decreased breakdown voltage with increase of film thickness, operation temperature and light intensity was due to the increased number of channel electrons and more injection into the gate oxide layer. One should decide the gate oxide thickness with considering the film thickness and operating temperature when one decides to replace the junctionless amorphous InGaZnO thin film transistors as BEOL transistors.

Study on French Film Fund Policy -Focusing on CNC's support project for film productions (프랑스 영화기금정책 연구 -CNC 제작지원 사업을 중심으로)

  • Kim, Hyun-Hee
    • Journal of the Korea Convergence Society
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    • v.10 no.9
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    • pp.133-140
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    • 2019
  • The Korean Film Council which manages the Film Development Fund carried out a number of projects to support film production, distribution, and film policies. Also, this organization participated in promoting advanced film technology and foreign film location by constituting an incentive support. The projects consist of support for the operation of Namyangju filming studio and the film information system as well. It is necessary to scrutinize the projects regarding support for film production, which is the largest and most important among the whole projects, for continuous development of the Korean film industry. this study reviwed the fundraising status, budget, and support projects of the Center for National Film/Video Center CNC which operates the film fund in France analyzed film production support policy of the CNC. Through this, we verified necessity of stable financing and funding of the Korean Film Development Fund, support for creation of film music and support for overseas filming, and prepared activation plans for film co-production.

Comparison of Resonance Characteristics in FBAR Devices by Thermal Treatments

  • Mai Linh;Song Hae-il;Yoon Giwan
    • Journal of information and communication convergence engineering
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    • v.3 no.3
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    • pp.137-141
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    • 2005
  • The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p}).$ These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.

A Study on the Chemical State in the ONO Superthin Film by Second Derivative Auger Spectra (2차 미분 Auger 스펙트럼을 이용한 ONO 초박막의 결합상태에 관한 연구)

  • 이상은;윤성필;김선주;서광열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.778-783
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    • 1998
  • Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)

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Characterization of channel length and width of p channel poly-Si thin film transistors (P channel poly-Si TFT의 길이와 두께에 관한 특성)

  • Lee, Jeoung-In;Hwang, Sung-Hyun;Jung, Sung-Wook;Jang, Kyung-Soo;Lee, Kwang-Soo;Chung, Ho-Kyoon;Choi, Byoung-Deog;Lee, Ki-Yong;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.87-88
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    • 2006
  • Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TFTs performance. Transfer characteristics of p-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of 2-30 ${\mu}m$ has been investigated. In this paper, we analyzed the data of p-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current ($I_{DSAT}$), and transconductance ($g_m$) of p-channel poly-Si thin film transistors with various channel lengths and widths.

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Automatic Film Line Scratch Removal System using Spatial Information (공간 정보를 이용한 오래된 필름에서의 스크래치 제거 시스템)

  • Ko, Eun-Jeong;Kim, Kyung-Tai;Kim, Eun-Yi
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.45 no.6
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    • pp.162-169
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    • 2008
  • Film restoration is to detect the location and extent of defected regions from a given movie film, and if present, to reconstruct the lost information of each regions. It has gained increasing attention by many researchers, to support multimedia service of high quality. Among artifacts, scratch is the most frequent degradation. In this paper, an automatic film line scratch removal system is developed that can detect and restore all kind of scratches. For this we use the spatial information of scratches: The scratch in old films has lower or higher brightness than neighboring pixels in its vicinity and usually appears as a vertically long thin line. Our systems consists of scratch detection and scratch restoration. The scratches of various types are detected by neural network based texture classifier and morphology-based shape filter and then the degraded regions are restored using bilinear interpolation. To assess the validity of the Proposed method, it has been tested with all kinds of scratches, and then experimental results show that the proposed approach is robust to various scratches and efficient to apply a real film removal system.

A Study on Real-time Movie Information System applied Augmented Reality (증강현실을 응용한 실시간 영화정보 제공 시스템에 관한 연구)

  • Jung, Da-Un;Ma, Jung-Youn;Cho, Woo-Sik;Seo, Yung-Ho;Kim, Tae-Yong;Choi, Jong-Soo
    • 한국HCI학회:학술대회논문집
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    • 2006.02a
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    • pp.1126-1129
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    • 2006
  • 최근 멀티플렉스 극장들이 많이 생기면서 영화 관객들이 한 장소에서 다양한 영화를 선택하여 감상할 수 있게 되었다. 그러나 극장에서 제공하는 영화정보는 비치된 팜플렛과 공중파 광고홍보가 유일하며 더 자세한 정보를 얻기 위해서는 인터넷이나 다른 매체를 통해 사전에 정보를 입수해야 하는 불편함이 존재하고 있다. 본 논문에서는 증강현실 기술을 이용하여 관객이 특정 마커가 부착된 영화팜플렛을 카메라에 비추면 마커에 해당되는 동영상을 찾아 재생하고 이때 스크린에 출력되는 동영상을 통해 영화의 예고편 및 등장인물에 대한 소개 등을 실시간으로 관객에게 제공하는 시스템을 구현한다. 본 시스템을 통해 관객에게 별도의 매체나 시간의 소비 없이 해당 극장에서 다양한 영화에 대한 정보를 쉽게 얻을 수 있고 이는 영화를 선택하는데 있어서 많은 편리함을 제공할 뿐만 아니라 영화를 선택하는 과정에 있어 시각적인 재미를 함께 제공한다.

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Comparison of Time Analysis on the Film Based System Versus PACS in the CT Scanning (CT 검사에서 시간분석에 의한 필름시스템과 PACS의 비교 연구)

  • Kweon, Dae-Cheol;Hong, Sung-Man;Park, Peom
    • IE interfaces
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    • v.15 no.4
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    • pp.439-443
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    • 2002
  • In this paper, we study to evaluate the relative time required to perform the CT scanning in the PACS versus a film-based system and helical versus non-helical studies. Time studies were performed in 175 consecutive CT scanning. Images from 85 examinations were electronically transferred to a PACS, and 90 were printed to film. The time required to obtain and electronically transfer the images or print the images to film and make the current and previous studies available to the radiologists for interpretation was recorded. The time required for a radiological technologist to complete a CT test was reduced by 43% with the PACS compared with the film-based system and nonhelical was reduced 10~20% with helical studies. This reduction was due to the elimination of a transfer and printing, such as the printing at window or level settings. The use of PACS can result in the elimination of time tasks for the radiological technologist, resulting in marked reduction in examination time. This reduction can result in decreased cost and increased productivity in PACS operation.

Investigation of american method in digital film acting - Focus on lee strasberg's affective memory (아메리칸 메소드를 통한 디지털영상연기 연구 - 리 스트라스버그의 감정의 기억을 중심으로)

  • Yoo, Dong-Hyuk
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.4
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    • pp.1007-1012
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    • 2014
  • This study investigates the basic elements of film acting based on Lee Strasberg's emotional memory. Acting in Korean film and TV drama often meets difficult circumstances. Therefore, I strongly suggest Lee Strasberg' American Method to film actors and students. This method refers to affective memory that Lee Strasberg devised for film acting at the Actors Studio. Another main point of this method is to overcome difficulties created from the camera use and shooting process. It is evident practicing affective memory would help actors perform better in their field.