• Journal of computational fluids engineering
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• v.20 no.1
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• pp.92-98
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• 2015

Thermal-fluid analysis is performed numerically to figure out the characteristics of heat transfer in a thermosyphon varying with the aspect ratio of geometry and the filling ratio of working fluid. The computational results are reasonable compared with the experimental data and visualized. The thermal resistance and the convective heat transfer coefficients are evaluated with the aspect ratio of thermosyphon and the filling ratio of working fluid, respectively. In conclusion, the thermal resistance decreases as the length of evaporator increases. However, the variation of a condenser length is nearly independent on the thermal resistance. In order to raise the performance of thermosyphon, the working fluid needs to be filled over 75%. In addition, Nusselt numbers in the evaporator and the condenser show 275 and 304, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.370-370
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• 2012

Feature size of Cu interconnects keep shrinking into several tens of nanometer level. For this reason, the Cu interconnects face challenging issues such as increase of electro-migration, line-width dependent electrical resistivity increase, and gap-filling difficulty in high aspect ratio structures. As the thickness of the Cu film decreases below 30 nm, the electrical resistivity is not any more constant, but rather exponential. Research on alloying with other elements have been started to inhibit such escalation in the electrical resistivity. A faint trace of Al added in Cu film by sputtering was reported to contribute to suppression of the increase of the electrical resistivity. From an industrial point of view, we introduced cyclic metal organic chemical vapor deposition (MOCVD) in order to control Al concentration in the Cu film more easily by controlling the delivery time ratio of Cu and Al precursors. The amount of alloying element could be lowered at level of below 1 at%. Process of the alloy formation was applied into gap-filling to evaluate the performance of the gap-filling. Voidless gap-filling even into high aspect ratio trenches was achieved. In-depth analysis will be discussed in detail.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.334-341
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• 2011

The mechanism behind super-filling of high-aspect-ratio features with Cu by catalyst-enhanced chemical vapor deposition (CECVD) coupled with plasma treatment is described and the metrology required to predict the filling feasibility is identified and quantified. The reaction probability of a Cu precursor was determined as a function of substrate temperature. Iodine adatoms are deactivated by the bombardment of energetic particles and also by the overdeposition of sputtered Cu atoms during the plasma treatment. The degree of deactivation of adsorbed iodine was experimentally quantified. The quantified factors, reaction probability and degree of deactivation of iodine were introduced to the simulation for the prediction of the trench filling aspect by CECVD coupled with plasma treatment. Simulated results show excellent agreement with the experimental filling aspects.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.655-656
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• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.543-544
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• 2010

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.6
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• pp.713-721
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• 1999

A composite plastic, where long metallic fibers are used as filling materials, is transformed from nonconducting to conducting medium as the volume fraction of filling metallic fibers is increased from zero : such drastic change in property is called the percolation. It is desired both for practical and theoretical purposes to understand the physics underlying the percolation and to estimate the percolation threshold that is defined by the minimum volume fraction of the metallic fibers for which the percolation occurs. In this study, percolation thresholds are calculated by Monte Carlo Computer simulation. Both lattice and continuum spaces are considered and detailed microstructures of metallic fibers are modelled as rigid and flexible bodies for both model spaces. Simulations are carried out for wide range of aspect ratios and discussions are given.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1124-1128
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• 2008

Thin-wall injection molding is associated with many advantages, including increased portability, the conserving of materials, and the reduction of the molding cycle times. In the application of the thin-wall molding, a considerable reduction of the effective flow thickness results in filling difficulty. High-frequency induction is an efficient way to overcome this filling difficulty by means of heating the mold surface by electromagnetic induction. The present study applies the induction heating to the injection molding of thinwalled micro structures with high aspect ratio. The feasibility of the proposed heating method is investigated through a numerical analysis. The estimated filling characteristics of the micro-features are investigated with variations of mold temperature and part thickness, of which results are also compared with experimental measurements.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.302-305
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• 2007

In recent years, many researches on new storage media with high capacity and information are developing. For manufacture of optical storage with high capacity, the injection molding process is generally used. In order to increase the filling ratio of the injection molding structure, the injection molding process required for high injection pressure, packing pressure and temperature control of the mold. However, conventional injection molding process is difficult to increase the filling ratio using injection master with the range of several nanometers and high aspect ratio. In order to improve and increase filling ratio of nano-structure with high aspect ratio, the active temperature control of injection mold was used. Experimental conditions were used injection pressure, time and temperature. Consequently, by using the peltier device into injection mold, we carried out the efficient and active temperature control of mold at low cost.

• Design & Manufacturing
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• v.6 no.1
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• pp.52-57
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• 2012

Aspect of filling imbalance that is originated from imbalanced share rate in runner is changed by material property, runner layout that are factors of changing viscosity and by injection pressure, injection speed, melt temperature and mold temperature that are injection conditions. In this paper, we made a study of runner system that is one of factor of filling imbalance and Sharp Conner Effect and Groove Corner Effect that are recently released. The study are showed that filling rate of between inside and outside cavity was influenced on shape of runner. Also, we suggested runner system for filling imbalance by adapting the two effects at multi cavity of unary branch type and theoretical investigated flow in the Shrap Conner runner type.