• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.76-79
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• 1999

Low-hydrogenated DLC films were coated on the Mo-tip FEAs by 'layer-by-layer' process based on the plasma-enhanced CVD method. The hydrogen content in the DLC film deposited by the 'layer-by-layer' process was appeared to be remarkably lowered through SIMS analysis. Also, the low-hydrogenated DLC-coated Mo-tip FEA showed good potentiality for FED applications in terms of turn-on voltage, emission current, emission stability and light emitting uniformity.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.8
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• pp.409-413
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• 2001

In the electron-gun of CRT, the Mo-tip FEA was employed as cold cathode in order to replace the conventional thermal cathode. The Mo-tip FEA was designed and fabricated according to CRT specification and mounted on the electron-gun. It was known that fabricated cold cathode electron-gun showed better performance in terms of maximum emission current and switch-on time when compared with the ones of thermal cathode electron-gun, but some geometrical structures in the inside of electron-gun must be changed to reduce the gate leakage current. Finally, the potential applicability was guaranteed by means of operating the 19 inch-sized LG-color CRT using the fabricated cold cathode electron-gun.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.34-36
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• 1997

We have fabricated a patterned diamond field emitter on a silicon substrate. Fine diamond particles were planted on a silicon wafer using conventional scratch method. A silicon oxide film was deposited on the substrate seeded with diamond powder. An array of holes was patterned on the silicon oxide film using VLSI processing technology. Diamond grains were grown using a microwave plasma-assisted chemical vapor deposition. Because diamond could not grow on the silicon oxide barrier, diamond grains filled only the patterned holes in the silicon oxide film, resulting in an array of diamond tips.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.66-66
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• 1999

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.124-127
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• 2000

A new triode type Ti-silicided Si FEA(field emitter array) was realized by Ti-silicidation of Ti coated Si FEA and its field emission properties were investigated. In the fabricated device, the field emission properties through the unit pixel with $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$ tip array in the area of $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$ were as follows : the turn-on voltage was about 70V under high vacuum condition of $10^8Torr$, and the field emission current and steady state current degradation were about 2nA/tip and 0.3%/min under the bias of $V_A=500V\;and\;V_G=150V$. The low turn-on voltage and the high current stability during long term operation of the Ti silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.171-175
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• 1996

Gate insulator for Si field emitter is usually formed by e-beam evaporation. However, the evaported oxide requires densification for a stable process and a reduction of gate leakage which results from its Si-rich and nonstoicheiometric structure. In this study, we have developed the process technology able to densify the evaporated oxide in H$_{2}$O ambient. Using this process, we have fabricted thefield emitter array with 625 emitters per pixel, of which gate hole diameter is 1.4.mu.m, for the pixel, anode current of 14.3.mu.A was extracted at a gate bias of 100V and gate leakage was about 0.27% of the total emission current.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.541-542
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• 2006

In this paper, I propose the field emission tip for the E-beam array system that is made by carbon nanotubes(CNT). CNT is one of the most expected future materials, because of its great mechanical, chemical and electrical characteristics. So CNT can be used for many applications such as electron emitter, sensor, single electron transistor and AFM tip. And CNT will be applied to our E-beam array system as field emission tip so we will improve the system's electrical characteristics.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.28-31
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• 2013

A volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrode deposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of well-controlled sputtering and the high aspect ratio in Si dry etch caused by high RF power, it was possible to obtain Si FEAs with a stable volcano shaped gate structure and to realize the restriction of gate leakage current in field emission characteristics. For 100 tip arrays and 625 tip arrays, gate leakage currents were restricted to less than 1% of the anode current in spite of the volcano-shaped gate structure. It was also possible to keep the emitters stable without any failure between the Si cathode and gate electrode in field emission for a long time.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.301-304
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• 2000

A new triode type Co-silicided Si FEA(field emitter array) was realized by Co-silicidation of Co coated Si FEA and its field emission properties were investigated. The field emission properties of the fabricated device through the unit pixel with $45{\times}45$ tip array in the area of $250{\mu\textrm{m}}{\times}250{\mu\textrm{m}}$ under high vacuum condition of $10^{-8}Torr$ were as follows : the turn-on voltage was about 35V and the anode current was about $1.2\mu\textrm{A}(0.6㎁/tip)$ at the bias of $V_A=500V\;and\; V_G=55V$. The fabricated device showed the stable electrical characteristics without degradation of field emission current for the long term operation except for the initial transient state. The low turn-on voltage and the high current stability of the Co-silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.