• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.182-189
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• 2000

A micro-vacuum sensor was fabricated for the measurement of the vacuum level in micro-space. The fact that the field emission current was dependent on the environmental vacuum level was employed as an operating principle. The fabricated lateral-type field emitter triode with a cathode, a gate and a anode separated by using the surface micromachining process showed the emission current variation in the range of $1.20{\sim}2.42\;{\mu}A$ for the vacuum range of $10^{-5}{\sim}10^{-8}\;Torr$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.510-513
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• 2002

띠모양의 에미터와 에미터와 정렬된 띠모양의 케이트 구멍을 가진 탄소나노튜브(CNT) 삼극 구조에 대하여 전계방출 시뮬레이션을 수행하였다. 전자방출은 주로 가장자리에서 발생하였으며 에미터와 게이트사이의 간격이 가까워지면 급격히 증가하였다. 전자방출 특성도 상당히 우수하였다. 한쪽 가장자리만을 사용한 삼극구조의 경우에는 방출된 전자의 궤적이 좁은 띠모양으로 형성되어 방향성이 매우 우수하게 나타났다. 띠모양의 에미터 및 게이트로 이어진 삼극구조는 제작이 용이하고 조립할 때 정렬이 쉬운 장점이 있다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.277-280
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• 2007

Field emission-back light unit (FE-BLU) was fabricated using carbon nanotube (CNT) emitter. Local dimming and local brightening techniques were achieved, which results in very high contrast ratio. In addition, the motion blur phenomenon, one of the serious problems of liquid crystal display (LCD) with cold cathode fluorescent lamp (CCFL)-BLU, was removed from LCD-TV by using FE-BLU.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.508-516
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• 1998

Mo-tip field emitter arrays(FEAs) were fabricated by conventional Spindt process and their life time characteristics and failure mode were evaluated. The fabricated Mo-tip FEA could generate at least $0.35\{mu} A/tip$ emission current for about 320 persistently under a constant gate bias of 140 V and was finally destroyed through self-healing mode. Thin diamond-like carbon films were coated on the M-tip by plasma-enhanced CVD and the dependence of emission properties upon the DLC thickness was investigated. By DLC coating, the turn-on voltage and emission current were appeared to be improved whereas the current fluctuation was increased in the DLC thickness range of $0~1,000\{AA}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.433-433
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• 2016

Carbon nanotubes (CNT) emitter has widely become an attractive mechanism that draws growing interests for cold cathode field emission. CNT yarns have demonstrated its potential as excellent field emitters. It was demonstrated that a small focal spot size was achieved by manipulating some electrical parameters, such as applied bias voltage at the mesh gate, and electrostatic focal lenses, geometrical parameters, such as axial distances of the anode, and the electrostatic focal lens from the cathode assembly, and the dimension of the opening of the electrostatic lens. Electrical-optics software was used to systematically investigate the behavior of the electron beam trajectory when the aforementioned variables were manipulated. The results of the experiment agree with the theoretical simulation results. Each variable has an individual effect on the electron beam focal spot size impinging on the target anode. An optimum condition of the parameters was obtained producing good quality of X-ray images. Also, MWCNT yarn was investigated for field emission characteristics and its contribution in the X-ray generation. The dry spinning method was used to fabricate MWCNT yarn from super MWCNTs, which was fabricated by MW-PECVD. The MWCNT yarn has a significant field emission capability in both diode and the triode X-ray generation structure compared to a MWCNT. The low-voltage-field emission of the MWCNT yarn can be attributed to the field enhancing effect of the yarn due to its shape and the contribution of the high-aspect-ratio nanotubes that protrude from the sides of the yarn. Observations of the use of filters on the development of X-ray images were also demonstrated. The amount of exposure time of the samples to the X-ray was also manipulated. The MWCNT yarn can be a good candidate for use in the low voltage field emission application of X-ray imaging.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.764-767
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• 2007

We investigated the field emission of single carbon nanotube including the anode effect by calculating the tunneling probability of an electron. The experimental results from this study were in agreement with our theoretical calculations. The constant enhancement factor was calculated using an approximation of the potential barrier.

• Current Photovoltaic Research
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• v.4 no.2
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• pp.31-41
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• 2016

n-type PERT (passivated emitter, rear totally diffused) bifacial solar cells with boron and phosphorus diffusion as p+ emitter and n+ BSF (back surface field) have attracted significant research interest recently. In this work, the influences of wafer thickness, bulk lifetime, emitter, BSF on the photovoltaic characteristics of solar cells are discussed. The performance of the solar cell is determined by using one-dimensional solar cell simulation software PC1D. The simulation results show that the key role of the BSF is to decrease the surface doping concentration reducing the recombination and thus, increasing the cell efficiency. A lightly phosphorus doped BSF (LD BSF) was experimentally optimized to get low surface dopant concentration for n type bifacial solar cells. Pre-oxidation combined with a multi-plateau drive-in, using limited source diffusion was carried out before pre-deposition. It could reduce the surface dopant concentration with minimal impact on the sheet resistance.

• ETRI Journal
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• v.24 no.4
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.103-108
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• 1997

Silicon field emitter arrays (FEAs) have been fabricated by a novel method employing a two-step tip etch and a spin-on-glass (SOG) etch-back process using double layered thermal/tetraethylortho-silicate (TEOS) oxides as a gate dielectric. A partial etching was performed by coating a low viscous photo resist and $O_2$ plasma ashing on order to form the double layered gate dielectric. A small gate aperture with low gate leakage current was obtained by the novel process. The hight and the end radius of the fabricated emitter was about 1.1 $\mu\textrm{m}$ and less than 100$\AA$, respectively. The anode emission current from a 256 tips array was turned-on at a gate voltage of 40 V. Also, the gate current was less than 0.1% of the anode current.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.124-127
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• 2000

A new triode type Ti-silicided Si FEA(field emitter array) was realized by Ti-silicidation of Ti coated Si FEA and its field emission properties were investigated. In the fabricated device, the field emission properties through the unit pixel with $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$ tip array in the area of $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$ were as follows : the turn-on voltage was about 70V under high vacuum condition of $10^8Torr$, and the field emission current and steady state current degradation were about 2nA/tip and 0.3%/min under the bias of $V_A=500V\;and\;V_G=150V$. The low turn-on voltage and the high current stability during long term operation of the Ti silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.