• 한국조명전기설비학회:학술대회논문집
• /
• 한국조명전기설비학회 2008년도 춘계학술대회 논문집
• /
• pp.148-150
• /
• 2008

In this paper, we report the improved driving methode using planar-gate for field emission light source. Due to the cold cathode in field emission device, it has advantage for driving system in terms of high speed pulse driving with narrow duty ratio. This paper shows that our driving method offers the stable and reliable driving system without rapid electric field variation for field emission light source.

• 한국재료학회지
• /
• 제12권6호
• /
• pp.499-507
• /
• 2002

The carbon nanotube emitters for field emission displays were fabricated by using screen printing techniques. The pastes for screen printing are composed of organic binders, carbon nanotubes (multiwalled or singlewalled), and some additive materials. The pastes were printed on Cr-coated/Ag-printed soda-lime glass substrates. From the I-V characteristics, the turn-on field of SWNT was lower than that of MWNT. The decrease in the mesh size of screen masks (i.e. increase in the opening size of the screen mesh) resulted in decreasing the turn-on field and increasing the electron emission current. When the carbon nanotubes were mixed with silver pastes, silver powders appeared to contribute to the vertically aligning of carbon nanotubes on a glass.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권8호
• /
• pp.577-579
• /
• 1999

DLC film remaining on device surface could be removed by eliminating AI sacrificial layer as a final step of lift-off process in the fabrication of DLC-coated Si-tip FEA. The field emission properties(I-V curves, hysteresis, and current fluctuation etc.) of the processed device were analyzed and the process was employed to 1.76 inch-sized FEA panel fabrication in order to evaluate its FED applicability.

• ETRI Journal
• /
• 제35권6호
• /
• pp.1164-1167
• /
• 2013

We correlate the failure in miniature X-ray tubes with the field emission gate leakage current of gated carbon nanotube emitters. The miniature X-ray tube, even with a small gate leakage current, exhibits an induced voltage on the gate electrode by the anode bias voltage, resulting in a very unstable operation and finally a failure. The induced gate voltage is apparently caused by charging at the insulating spacer of the miniature X-ray tube through the gate leakage current of the field emission. The gate leakage current could be a criterion for the successful fabrication of miniature X-ray tubes.

• 전기학회논문지
• /
• 제61권4호
• /
• pp.590-594
• /
• 2012

ZnO nanowires were fabricated by hydrothermal synthesis technique for field emission device application. Al-doped zinc oxide (AZO) thin films were prepared as seed layer of catalyst for the ZnO nanowire synthesis, for which conductivity of the seed layer was tried to be improved for enhancing the field emission property of the ZnO nanowire. The AZO seed layer revealed specific resistivity of $ 7.466{\times}10^{-4}[{\Omega}{\cdot}cm]$ and carrier mobility of 18.6[$cm^2$/Vs]. Additionally, upper tip of the prepared ZnO nanowires was treated by hydrochloric acid (HCl) to form a nanocone shape of ZnO nanowire, which was aimed for enhanced focusing of electric field on that and resultingly to improve field emission property of the ZnO nanowires. The ZnO nanowire with nanocone shape revealed decreased threshold electric field and increased current density than those of the simple ZnO nanowires.

• Bulletin of the Korean Chemical Society
• /
• 제34권6호
• /
• pp.1779-1782
• /
• 2013

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 $V/{\mu}m$ were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

• Journal of Information Display
• /
• 제7권1호
• /
• pp.1-6
• /
• 2006

A 10" carbon nanotube field emission display device was fabricated with a novel structure with a hopping electron spacer (HES) by screen printing technique. HES plays a role of preventing the broadening of electron beams emitted from carbon nanotubes without electrical discharge during operation. The structure of the novel tetrode is composed of carbon nanotube emitters on a cathode electrode, a gate electrode, an extracting electrode coated on the top side of a HES, and an anode. HES contains funnel-shaped holes of which the inner surfaces are coated with MgO. Electrons extracted through the gate are collected inside the funnel-shaped holes. They hop along the hole surface to the top extracting electrode. In this study the effects of the addition of HES on emission characteristics of field emission display were investigated. An active ozone treatment for the complete removal of residues of organic binders in the emitter devices was applied to the field emission display panel as a post-treatment.

• Carbon letters
• /
• 제15권3호
• /
• pp.214-217
• /
• 2014

A filtration-taping method was demonstrated to fabricate carbon nanotube (CNT) emitters. This method shows many good features, including high mechanical adhesion, good electrical contact, low temperature, organic-free, low cost, large size, and suitability for various CNT materials and substrates. These good features promise an advanced field emission performance with a turn-on field of $0.88V/{\mu}m$ at a current density of $0.1{\mu}A/cm^2$, a threshold field of $1.98V/{\mu}m$ at a current density of $1mA/cm^2$, and a good stability of over 20 h. The filtration-taping technique is an effective way to realize low-cost, large-size, and high-performance CNT emitters.

• 전자공학회논문지 IE
• /
• 제44권3호
• /
• pp.1-5
• /
• 2007

Si 팁 기술의 장점을 살리면서 팁을 실리사이드화하여 팁표면의 열화학적 내구성을 증가시키고 전계방출 전류밀도를 금속 팁에 가깝게 끌어올릴 수 있는 새로운 3극관 형태의 전계방출 팁 구조를 제작하였다. 제작된 소자의 전계방출 특성을 $10^{-8}Torr$의 초고진공 상태에서 캐소드-애노드 간격을 $100{\mu}m$로 하여 측정한 결과, turn-on 전압이 약 40V로, 방출전류가 인가 전압 150V에서 약 $69{\mu}A$로 나타났다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권1호
• /
• pp.59-63
• /
• 2000

For the Mo-tip field emitter array, the method by which the geometrical structure of the gate insulator wall could be modified in order to improve field emission properties(turn-on voltage and gate leakage current). The device having a gate insulator of complex shape, which means the combined geometrical structure with round shape made by wet etching and vertical shape made by dry etching processes, was fabricated and the field emission properties of the three kinds of devices were compared. As a result, the electric field applied to tip apex could be increased and gate leakage current could be decreased by employing the gate insulator having geometrical wall structure of mixed shape. Finally, the obtained empirical results were analyzed by simulation of electric field distribution at/near the tip apex and gate insulator using SNU-FEAT simulator.