• 제목/요약/키워드: Field emission device

검색결과 178건 처리시간 0.028초

Structural and Electrical Properties of an Electrolyte-insulator-metal Device with Variations in the Surface Area of the Anodic Aluminum Oxide Template for pH Sensors

  • Kim, Yong-Jun;Lee, Sung-Gap;Yeo, Jin-Ho;Jo, Ye-Won
    • Journal of Electrical Engineering and Technology
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    • 제10권6호
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    • pp.2364-2367
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    • 2015
  • In this study, we fabricated an electrolyte-insulator-metal (EIM) device incorporating a high-k Al2O3 sensing membrane using a porous anodic aluminum oxide (AAO) through a two-step anodizing process for pH detection. The structural properties were observed by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction patterns (XRD). Electrochemical measurements taken consisted of capacitance-voltage (C-V), hysteresis voltage and drift rates. The average pore diameter and depth of the AAO membrane with a pore-widening time of 20 min were 123nm and 273.5nm, respectively. At a pore-widening time of 20 min, the EIM device using anodic aluminum oxide exhibited a high sensitivity (56mV/pH), hysteresis voltage (6.2mV) and drift rate (0.25mV/pH).

A gas display device with electron emitter

  • Son, Seung-Hyun;Nam, Mun-Ho;Kim, Jung-Min;Cho, Sung-Hee;Jang, Sang-Hun;Kim, Gi-Young;Han, In-Su;Kim, Dae-Hyun;Cho, Young-Mi;Kim, Chang-Wook;Park, Hyoung-Bin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1253-1256
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    • 2007
  • A display device combining plasma display panel (PDP) and field emission display (FED) is proposed to achieve high luminous efficiency. The device can avoid the main energy loss channels of both PDP (ion loss) and FED (low CL efficiency). $2{\sim}6$”-diagonal test panels with carbon nano-tube (CNT) electron emitter and Xenon ambient gas showed the luminous efficiency of 4.14lm/W and brightness of $263cd/m^2$ at 35V (1kHz, 1% duty), indicating that it is a good candidate for the low voltage driven, highly efficient next generation display.

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Fabrication Process of Single CuO Nanowire Devices

  • Vu, Xuan Hien;Jo, Kwang-Min;Kim, Se-Yun;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Applied Science and Convergence Technology
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    • 제23권3호
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    • pp.134-138
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    • 2014
  • One-dimensional nanostructures such as nanowires have been extensively investigated as a promising type of material for applications of nanoscale technology. The fabrication of single-nanowire devices are consequently important and interesting. This study introduced a feasible method for growing CuO nanowires on Cu foils. The nanowires had diameters of 10~150 nm and lengths of more than $7{\mu}m$ and were grown by means of thermal oxidation in a vacuum. They were entirely and uniformly grown over the Cu foil surfaces and could be extracted and dispersed in an ethanol solution for further purposes. In addition, a simple fabrication method for realizing device functionality from a single CuO nanowire was reported. Fabricated devices were carefully checked by field-emission scanning electron microscopy (SEM). The probability of the realization of a single-CuO-nanowire device relative to that of all other types was estimated to be around 25%. Finally, the I-V characteristics of the devices were analyzed.

Fabrication of Field-Emitter Arrays using the Mold Method for FED Applications

  • Cho, Kyung-Jea;Ryu, Jeong-Tak;Kim, Yeon-Bo;Lee, Sang-Yun
    • Transactions on Electrical and Electronic Materials
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    • 제3권1호
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    • pp.4-8
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    • 2002
  • The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

Fabrication of Photo Sensitive Graphene Transistor Using Quantum Dot Coated Nano-Porous Graphene

  • 장야무진;이재현;최순형;임세윤;이종운;배윤경;황종승;황성우;황동목
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.658-658
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    • 2013
  • Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

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SrAl2O4(Eu,Dy,Nd) 압광체를 이용한 균열첨단에서의 응력장 가시화 연구 (Direct Observation of Crack Tip Stress Field Using the Mechanoluminescence of SrAl2O4:(Eu,Dy,Nd))

  • 김지식;손기선
    • 소성∙가공
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    • 제12권5호
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    • pp.493-497
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    • 2003
  • The present investigation aims at visualizing the crack tip stress field using a mechanoluminescence material. The well known compound $SrAl_2O_4$:$Eu^{2+}$ was adopted as a mechanolurninescence material. Two more trivalent rare-earth elements such as Dy and Nd were taken into consideration as codopants to provide the appropriate trap levels. Samples of a variety of compositions were prepared by varing $Eu^{2+}$, $Dy^{3+}$, and $Nd^{3+}$ doping contents, for which the combinatorial chemistry method was used. In order to search for the optimum composition for the highest mechanoluminescence, the luminescence induced by a compressive device including a CCD camera. In parallel, a compact tension specimen was prepared by mixing the luminescence powders of optimum composition and epoxy resin. Crack initiation from the mechanically machined sharp note tip and its growth during loading were found to be associated with the extent of light emission from $SrAl_2O_4$.

Inductively Coupled Plasma Reactive Ion Etching of MgO Thin Films Using a $CH_4$/Ar Plasma

  • Lee, Hwa-Won;Kim, Eun-Ho;Lee, Tae-Young;Chung, Chee-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.77-77
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    • 2011
  • These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

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Precise System Models using Crystal Penetration Error Compensation for Iterative Image Reconstruction of Preclinical Quad-Head PET

  • Lee, Sooyoung;Bae, Seungbin;Lee, Hakjae;Kim, Kwangdon;Lee, Kisung;Kim, Kyeong-Min;Bae, Jaekeon
    • Journal of the Korean Physical Society
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    • 제73권11호
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    • pp.1764-1773
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    • 2018
  • A-PET is a quad-head PET scanner developed for use in small-animal imaging. The dimensions of its volumetric field of view (FOV) are $46.1{\times}46.1{\times}46.1mm^3$ and the gap between the detector modules has been minimized in order to provide a highly sensitive system. However, such a small FOV together with the quad-head geometry causes image quality degradation. The main factor related to image degradation for the quad-head PET is the mispositioning of events caused by the penetration effect in the detector. In this paper, we propose a precise method for modelling the system at the high spatial resolution of the A-PET using a LOR (line of response) based ML-EM (maximum likelihood expectation maximization) that allows for penetration effects. The proposed system model provides the detection probability of every possible ray-path via crystal sampling methods. For the ray-path sampling, the sub-LORs are defined by connecting the sampling points of the crystal pair. We incorporate the detection probability of each sub-LOR into the model by calculating the penetration effect. For comparison, we used a standard LOR-based model and a Monte Carlo-based modeling approach, and evaluated the reconstructed images using both the National Electrical Manufacturers Association NU 4-2008 standards and the Geant4 Application for Tomographic Emission simulation toolkit (GATE). An average full width at half maximum (FWHM) at different locations of 1.77 mm and 1.79 mm are obtained using the proposed system model and standard LOR system model, which does not include penetration effects, respectively. The standard deviation of the uniform region in the NEMA image quality phantom is 2.14% for the proposed method and 14.3% for the LOR system model, indicating that the proposed model out-performs the standard LOR-based model.

Influence of surface morphology and thickness of molecular thin films on the performance of SubPc-$C_{60}$ photovoltaic devices

  • Kim, Jin-Hyun;Gong, Hye-Jin;Yim, Sang-Gyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.336-336
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    • 2011
  • Over the past decades, organic semiconductors have been investigated intensely for their potential in a wide range of optoelectronic device applications since the organic materials have advantages for very light, flexible and low cost device fabrications. In this study, we fabricated small-molecule organic solar cells (OSCs) based on chloro[subphthalocyaninato]boron(III) (SubPc) as an electron donor and $C_{60}$ as an electron acceptor material. Recently SubPc, a cone-shaped molecule with $14{\pi}$-electrons in its aromatic system, has attracted growing attention in small-molecule OSC applications as an electron-donating material for its greater open-circuit voltage (VOC), extinction coefficient and dielectric constant compared to conventional planar metal phthalocyanines. In spite of the power conversion efficiency (PCE) enhancement of small-molecule OSC using SubPc and $C_{60}$, however, the study on the interface between donor-acceptor heterojunction of this system is limited. In this work, SubPc thin films at various thicknesses were deposited by organic molecular beam deposition (OMBD) and the evolution of surface morphology was observed using atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM). We also investigated the influence of film thickness and surface morphology on the PCE of small-molecule OSC devices.

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선미의 불균일 유동장에서 받음각을 고려한 비대칭 전류고정날개 설계 (Design of Asymmetric Pre-swirl Stator for KVLCC2 Considering Angle of Attack in Non-uniform Flow Fields of the Stern)

  • 이기승;김문찬;신용진;강진구
    • 대한조선학회논문집
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    • 제56권4호
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    • pp.352-360
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    • 2019
  • International Maritime Organization (IMO) regulates an emission of greenhouse gases by creating an Energy Efficiency Design Index (EEDI) to reduce environmental pollution. In propulsion system field, studies are under way on Energy Saving Device (ESD), which can improve propulsion efficiency with the propeller, to reduce the EEDI. Among the studies, the study of Pre-Swirl Stator (PSS) has been actively conducted from long time ago. Recently the variable pith angle type pre-swirl stator has been studied to improve the propulsion efficiency in non-uniform flow fields of the Stern. However, for traditional design methods, no specific design method has been established on the blade or location of radius. In this study, proper design method is proposed for each blade or location for radius according to hydrodynamic pitch angle.