• 센서학회지
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• 제32권6호
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• pp.487-495
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• 2023

Over the past few decades, considerable research has been conducted on field-effect transistor (FET) biosensors; however, other than electrochemical sensors for pH, they have not reached the commercialization stage and still remain at the basic research level. Although several reports have been published on experiments with real biological samples, no reports exist of developments that have reached commercialization or finalized approval for use. In this paper, we explain the reason for the experiments of FET biosensors to induce spurious signals in an experimental setup and explain the existence of misunderstandings regarding the operating principle of FET biosensors owing to the spurious signals. Based on the thoughtful review of the results of previously published papers, we show that the electrochemical read-out principle of FET biosensors requires our intensive understanding of the interfacial potential between the solution and the sensor electrode for further progress in the FET biosensor research.

• Applied Science and Convergence Technology
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• 제23권2호
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• pp.61-71
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• 2014

A field-effect transistor (FET) is one of the most commonly used semiconductor devices. Recently, increasing interest has been given to FET-based biosensors owing totheir outstanding benefits, which are likely to include a greater signal-to-noise ratio (SNR), fast measurement capabilities, and compact or portable instrumentation. Thus far, a number of FET-based biosensors have been developed to study biomolecular interactions, which are the key drivers of biological responses in in vitro or in vivo systems. In this review, the detection principles and characteristics of FET devices are described. In addition, biological applications of FET-type biosensors and the Debye length limitation are discussed.

• 공업화학
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• 제26권1호
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• pp.116-119
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• 2015

전계 효과 트랜지스터(FET) 기반의 이온 또는 바이오센서에 대한 연구는 지금까지 활발하게 이루어지고 있다. 본 논문에서는 여러 가지 측정 방법 중에 FET 게이트 절연체 위의 감지막과 이온 또는 생분자의 상호작용으로 전하 분포의 변화가 일어나면 이로 인해 드레인 전류의 변화를 측정하는 방법을 기반으로, 동일한 입력 신호, 즉 동일한 이온 또는 생분자의 농도에 대해 최적의 출력 신호를 얻기 위한 방법에 대해 논의한다. 대표적인 FET 센서는 이온 감지 FET (ISFET)로 본 논문에서는 pH를 측정하는 센서를 이용하였다. ISFET는 게이트 전압 대신 기준전극 전압을 가하는데 이 기준전극 전압과 드레인 전류의 관계식을 측정하여, 가장 기울기가 큰 곳을 찾아 이를 기준으로 동작범위에서의 입력 변화에 대해 출력 신호인 포화영역에서 드레인 전류의 변화가 큰 조건을 설정해 보았다.

• 한국전자통신학회논문지
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• 제5권1호
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• pp.88-92
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• 2010

본 연구에서는 기존의 반도체 공정을 이용하여 bottom gate, top gate구조의 탄소나노튜브 트랜지스터를 제작하였다. 게이트 특성에 따른 특성을 연구하기 위하여 열화학 기상 증착법(CVD)으로 탄소나노튜브를 디바이스에 직접 성장시키고, 탄소나노튜브의 성장 특성 및 I-V동작 특성을 분석하였다. 제작된 탄소나노튜브 FET는 p-type, 즉 hole이 다수 캐리어로 존재하는 트랜지스터이며 구동전압에 따라 conductance 변화하는 특성을 보였다.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.930-933
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.619-621
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.506-507
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel device was width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집
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• pp.12-13
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 공업화학
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• 제24권1호
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• pp.1-9
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• 2013

의료의 패러다임이 질병 치료에서 질변 예방 및 조기 진단으로 변화하면서 미량의 생분자를 측정할 수 있는 기술에 대한 수요가 증가하고 있다. 미량의 생분자를 측정할 수 있는 다양한 기술이 존재하는데 여기서는 성숙된 반도체 기술을 이용한 바이오센서에 대해 언급하고자 한다. 이의 이해를 돕기 위해 반도체의 기본 소자인 MOSFET (Metal-oxide-semiconductor field-effect transistor)의 구조와 원리를 소개하고, 이를 응용한 ISFET (Ion sensitive FET), BioFET (Biologically modified FET), Nanowire FET, 그리고 IFET (Ionic FET)에 대한 소개와 이의 생명공학에 대한 응용에 대해 논하고자 한다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 춘계종합학술대회 A
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• pp.727-729
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• 2008

Organic field-effort transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.