• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.171-172
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• 2018

Dual gate L-shaped tunnel field-effect-transistor (DG-LTFET) is presented in this study. DG-LTFET achieves near vertical subthreshold slope (SS) and its ON current is also found to be higher then both conventional TFET and LTFET. This device could serve as a potential replacement for conventional complimentary metal-oxide-semiconductor (CMOS) technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.52-57
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• 1995

An accurate and efficient single-integral semi-numerical model is developed and applied to analyse effects of localized electronic states in the mobility gap on the drain-current versus gale-voltage characteristics of hydrogenated amorphous field-effect transistors. It is shown that the low-density deep-gap states distributed in the midgap also sensitively and largely influence the device electronic performance as well as well as the large-density tail states distributed near the conduction band edge.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.637-640
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• 2008

The properties of oriented poly(3-hexylthiophene-2,5-diyl) in field effect transistors (FETs) have been investigated through mechanical stretching process as the original. Silicon-based FETs shown high mobility of $0.02\;cm^2/V$ s after thermal treatment and $0.0092\;cm^2/V$ s at r.t. PET-based FETs were expected to show a similar performance in mobility to that of silicon-based FETs.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1561-1563
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• 2008

We report an optical second harmonic generation measurement that allows direct probing of dynamical carrier motion in organic field effect transistors. Carrier injection and transport process are discriminated. The mobility and contact resistance of pentacene FETs are determined from the visualized diffusion-like carrier motion.

• 전기의세계
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• v.28 no.11
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• pp.33-36
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• 1979

In a uniform field, when an electrode with a hemispherical protrusion is set in atmosphere, by applying the streamer breakdown criterion and the surface roughness factor, the effect of field distortion due to electrode surface roughness on breakdown is investigated theoretically. A quantitative relation between the threshold of breakdown and the air pressure times the heigh of protrusion is derived by the aid of a computor and the results are compared with that of SF$_{6}$./.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.659-660
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• 2007

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.160-162
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• 2016

A compact model of tunnel field effect transistor (TFET) has been developed. The model includes a surface potentia calculation module and a band-to-band-tunneling current module. Model comparison with TCAD shows that the mode calculates TFET surface potential and drain current accurately.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.37-40
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• 2004

This study presents numerical solutions of three-dimensional laminar flow-field formed by photo resist flow in a slit-coater model. We discuss on the governing equations, laminar viscosities and the computational model applied in our numerical calculation and some results. We prove that the structure of tapered-cavity aid to make uniform pressure-field and boundary effect is an important problem to improve coating uniformity. In view of uniformity improvement, it is necessary to study for the structure of cavity and flow path.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.38-38
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• 1997

In the paper, we investigate the magneto-impedance(MI) effect of the Fe-Co-B Amorphous magnetic film, the amorphous magnetic film having near zero magnetostostriction is fabricated by using the sputtering methode, and then annealed in magnetic field. When the external magnetic field is directly applied to the fabricated film, the voltage amplitude between both side of the magnetic film varies about 22% at 10[MHz] and the impedance varies about 21% at 10[Oe]. Thus, we find that the fabricated magnetic film has the characteristics of high-quality sensor element.

• Journal of Sensor Science and Technology
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• v.30 no.1
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• pp.1-9
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• 2021

This mini review summarizes some of the recent advances in machine-learning (ML)-driven chemical and biological sensors. Specific focus is on field-effect-transistor (FET)-based sensors with a description of their structures and detection mechanisms. Key ML techniques are briefly reviewed for an audience not familiar with the basic principles. We mainly discuss two aspects: (1) data analysis based on ML and (2) ML applied to sensor design. In conclusion, the challenges and opportunities for the advancement of ML-based sensors are briefly considered.