• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1686-1688
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• 1999

The FLR(Field Limiting Ring) structure with a buried ring is proposed to improve breakdown voltage. The breakdown characteristics of proposed structure is verified by two-dimensional device simulator. ATLAS. It has shown that the breakdown voltage of the proposed structure is increased by 11 % compared with that of the FLR.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1337-1339
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• 1998

The trench termination scheme is introduced for high voltage devices. The curvature of the depletion region at field limiting ring is critical factor to determine the breakdown voltage. The smooth curvature of the depletion junction alleviate the electric field crowding effect around this region. In the trench field limiting ring, the radius of the depletion region is smaller than conventional field limiting ring, but the distance between every trench is spaced small enough to punchthrough before initiation of local breakdown. The trench field limiting ring on silicon can ne formed by RIE followed by oxidation on side wall surface of the trench, and polysilicon filling. The combined termination of this trench floating field ring and field plate have been designed and analyzed. The breakdown simulation by 2-dimensional TCAD shows that the cylindrical junction breakdown voltage for substrate doping might be 99 percent of the ideal breakdwon voltage for substrate doping concentration of $3\times10^{14}cm^{-3}$ with about $100{\mu}m$ of lateral termination width.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.7
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• pp.95-101
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• 1994

A novel concept for the analysis of planar devices with a field limiting ring(FLR) is presented which allows analytic expressions in a normalized form for the potential distributions of FLR structure. Based on the method of image charges the main and ring junctions with identical cylindrical edges are kept to be two different equipotential surfaces. The potential relations between main and ring junction of the FLR structure are compared with 2-dimensional device simulation program. MEDICI. A good accordance is found. Comparisions with experimental data reported for the optimum ring spacing and the relative improvement of the breakdowm voltages in the FLR sturcture show the validity of the concept. The normalized expressions allow a universal application regardless to the junction depths and background doping levels.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.3
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• pp.386-392
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• 1996

Zinc-Borosilicate is used as a side insulator wall to make high breakdown voltage with one Field Limiting Ring in a power p-n junction device in simulation. It is known that surface charge density can be yield at the interface of Zinc-Borosilicate glass / silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage is improved 1090 V under the same structure.The breakdown voltage under varying the surface charge density has a limit value. When the epitaxial thickness is varied, the position of FLR doesn't influence to the breakdown characteristic not only under non punch-through structure but also under punch-through structure. (author). 7 refs., 12 figs., 2 tabs.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.155-158
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• 1988

The fabrication of devices using plans technology could lend to n serious degradation in the breakdown voltage as a result of high electric field at the edges. An elegant approach to reducing the electric field at the edge is by using field limiting ring. The presence of surface charge has n strong influrence on the depletion layer spreading at the surface region because this charge complements the charge due to the ionized acceptors inside the depletion layer. Surface charge of either polarity can lower the breakdown voltage because it affects the distribution of electric field st the edges. In this paper we discuss the influrences of fixed oxide charge on the breakdown voltage of the p+/n junction with field limiting ring(or without field limiting ring).

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1072-1074
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• 1995

Zinc-Borosilicate is used as a side insulastor wall to make high breakdown voltage with one Field Limiting Ring in a p-n junction. It is known that surface charge can be yield at the interface of Zinc-Borosilicate Glass/Silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage improved more than 660V without using more FLR.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.847-850
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• 1998

This paper proposes a new scheme of FLR for improving corner breakdown voltage. The major difference from the conventional FLR is to build extra rings and floating field plates in the corner region. In this structure the additional field plate and ring have reduced th electric field at the junction in the corner region. Thus it improves the breakdown characteristics which are critical for obtaining high breakdown voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.212-213
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• 2008

This paper describes the analysis of the device characteristics of the NPT type 1200V Insulated gate Bipolar Transistor. In case of NPT type IGBT devices, optimized n-epi layer thickness and concentration is important to obtain low on-state voltage and breakdown voltage characteristics. In this paper, we analyzed on-state and off-state characteristics of NPT type IGBT. Breakdown voltage of designed IGBT was higher than 1200V when we optimized Field Limiting Ring structures. And also, on-state voltage characteristics was shown less then 2.5V at 25A of drain current.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.300-304
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• 2004

We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.191-192
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• 2005

The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.