• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.98-102
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• 2002

We investigated domains and conoscope under the polarizing microscope and the index of refraction on the c-plate GMO which has the ferroelectric and ferroelastic phase at room temperature. To observed the change of refractive index in connection with domain, we developed an apparatus to obtain the refractive index by measuring the Brewster's angle. The resolution of the minimum rotation angle of this apparatus is $0.001^{\circ}$. To obtain the refractive index map on the sample, the moving distance of XY stage loaded sample holder is 60 mm and the minimum moving distance is 0.002 mm. Also, To obtain the indicatrix for single crystal, vertical turntable with sample holder and XY stage was loading on horizontal turntable. The minimum resolution angle of this vertical turntable is $0.001^{\circ}$. We measured the refractive index of transparent materials such as ferroelectrics. In the case of $Gd_{2}(MoO_{4})_{3}$, the Brewster angle is $62.11^{\circ}$ and then, the refractive index is 1.8895 by using He-Ne Laser. Also the refractive distribution of c-plate GMO was obtained with $400{\mu}m{\times}120{\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.486-491
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• 2002

We have fabricated $Bi_{3.25}La_{0.75}Ti_3O_12$ (BLT) thin films on the Pt/Ti/$SiO_2$/Si substrates using a metalorganic decomposition (MOD) method with annealing temperature from $550^{\circ}C$ to $750^{\circ}C$. The structural properties of BLT films examined by x-ray diffraction (XRD). From XRD analysis. BLT thin films show polycrystalline structure. The layered-perovskite phase was obtained by spin-on films at above $600^{\circ}C$ for 1h. Scanning electron microscopy (SEM) showed uniform surface composed of rodlike grains. The grain size of BLT films increased with increasing annealing temperature. The BLT film annealed at $650^{\circ}C$ was measured to have a dielectric constant of 279, dielectric loss of 1.85(%), remanent polarization of $25.66\mu C/\textrm{cm}^2$, and coercive field of 84.75 kV/cm. The BLT thin films showed little polarization fatigue test up to $3.5{\times}10^9$ bipolar cycling at 5 V and 100 kHz.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.6-10
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• 2000

Ferroelectric YMnO$_3$ thin films were deposited on $Y_2$O$_3$/si(100) substrates by metalorganic chemical vapor deposition. The YMnO$_3$ thin films annealed in vacuum ambient (100 mTorr) above 75$0^{\circ}C$ show hexagonal structured YMnO$_3$. However, the film annealed in oxygen ambient shows poor crystallinity, and the second phase as $Y_2$O$_3$ and orthorhombic-YMnO$_3$ were shown. The annealing ambient and pressure on the crystallinity of YMnO$_3$ thin films is very important. The C-V characteristics have a hysteresis curve with a clockwise rotation, which indicates ferroelectric polarization switching behavior. When the gate voltage sweeps from +5 to 5 V, the memory window of the Pt/YMnO$_3$/Y$_2$O$_3$/Si gate capacitor annealed at 85$0^{\circ}C$ is 1.8 V. The typical leakage current densities of the films annealed in oxygen and vacuum ambient are about 10$^{-3}$ and 10$^{-7}$ A/cm$^2$ at applied voltage of 5 V.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.81-85
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• 1999

Polarization and strain induced by unipolar electric field (P\ulcorner, S\ulcorner), those induced by bipolar electric field (P, S) and remanent polarization (P\ulcorner) were investigated in 0.9Pb(Mg\ulcornerNb\ulcorner)O$_3$-$0.1PbTiO_3$relaxor ferroelectric ceramics in the temperature range of $-50^{\circ}C$~$90^{\circ}C$. From the temperature dependence of polarization and strain, the transition from predominantly paraelectric (electrostrictive) to partially ferroelectric (piezoelectric) is visualized. Under the given temperature, the P\ulcorner/P\ulcorner is always larger than the S\ulcorner/S\ulcorner and the difference between them becomes larger ass the temperature decrease. The S\ulcorner/P\ulcorner increases as the temperature decreased below phase transition temperature. It was suggested that these experimental results might be explained with a simple rigid ion model concentrating on BO\ulcorner octahedron.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.251-255
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• 2001

SrTeO$_3$는 312$^{\circ}C$~485$^{\circ}C$의 제한된 온도범위에서 강유전성이 나타난다고 보고된 바 있다. 본 연구에서는 (Sr$_{1-x}$Pb$_{x}$)TeO$_3$(x=0~0.15) 고용체의 상형성 거동, 미세구조, 유전특성 등을 조사하였다. $700^{\circ}C$에서 하소하였을 때 질소 기체 분위기에서는 SrTeO$_3$상이 합성되었지만 공기 중에서는 더욱 산화된 상인 SrTeO$_4$상이 주된 상으로 존재하였다. (Sr$_{1-x}$Pb$_{x}$)TeO$_3$세라믹스에서 Pb 치환량이 0.15 몰까지 증가함에 따라 최적 소결온도가 80$0^{\circ}C$에서 $650^{\circ}C$로 감소하였고, 입자 크기는 증가하였으며, 유전상수가 13에서 25로 증가하였다. 또한, Pb 치환량이 0.05 이상일 때 강유전상이 안정한 온도 영역이 상온까지 확장되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.339-342
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• 1998

Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.166-169
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• 2006

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNT) thin films were prepared on $Pt(111)/Ti/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_3$, $Nd(TMHD)_3$ and $Ti(O^iPr)_2(TMHD)_2$ were used as the precursors and were dissolved in n-butyl acetate. The BNT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNT thin film was $31.67\;{\mu}C/cm^2$ at an applied voltage of 5 V.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.795-803
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• 1994

Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.

• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.665-671
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• 1996

Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.

• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.695-700
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• 1993

In this study, we prepared Pb-Ti stock solution by sol-gel processing and deposited PbTiO3 thin film on a Pt coated SiO2/Si wafer by spin coating using the stock solution. We used lead acetate trihydrate and titanium isopropoxide. The stock solution was partially hydrolized and finally a 0.25M coating solution was prepared. We achieved spin coating at 4000rpm for 30 seconds and heated the thin film at 375$^{\circ}C$ for 5 minutes and at $600^{\circ}C$ for 5 minutes successively, first and second heating state. And the thin film was finally sintered at 90$0^{\circ}C$ for 1 hour in the air. The upper electrode of the thin film was made by gold sputtering and was cricle shape with radius 0.4mm. Measured dielectric constant, dissipation factor and phase transition temperature(Cuire Temp.) were about 275, 0.02 and 521$^{\circ}C$ respectively. To observe ferroelectric characteristics we calculated Pr(remnant polarization) and Ec(coercive field) byhysteresis curve. Ec was 72kV/cm and Pr was 11.46$\mu$C/$\textrm{cm}^2$.