• 한국세라믹학회지
• /
• 제32권12호
• /
• pp.1408-1416
• /
• 1995

Microstructure and ferroelectric properties of sol-gel derived PZT(52/48) and PT interlayered PZT(52/48) thin films on Pt/Ti/SiO2/Si substrates were investigated. Films were fabricated using Acetylacetone chelated PT and PZT(52/48) sols. PZT(52/48) thin films annealed at $700^{\circ}C$ for 20 min showed the rosette structure with the size of 1.2~1.6${\mu}{\textrm}{m}$ and the pyrochlore phse was contained. PT interlayered PZT thin films, which is inserted by PbTiO3 thin layer with the thickness of 130 $\AA$ between PZT thin film and electrode, consisted of a single perovskite phase after annealing above 55$0^{\circ}C$. They exhibited the uniform and columnar grains of 0.1~0.16${\mu}{\textrm}{m}$, which are applicable for microelectronic device including non-volatile memory. Typical P-E hysteresis loops could be obtained from PT interlayered PZT thin film at as low as the annealing temperature of 50$0^{\circ}C$. Ferroelectric properties of PT interlayered PZT thin films were improved as increasing annealing temperature up to $700^{\circ}C$, and then deteriorated at 75$0^{\circ}C$. PZT(52/48) and PT interlayered PZT(52/48) thin film annealed at $700^{\circ}C$ for 20 min displayed Ps=38.8$\mu$C/$\textrm{cm}^2$, Pr=10.0$\mu$C/$\textrm{cm}^2$, Ec=65.3 kV/cm and Ps=28.5$\mu$C/$\textrm{cm}^2$, Pr=9.8$\mu$C/$\textrm{cm}^2$, Ec=76.1 kV/cm, respectively.

• Journal of Magnetics
• /
• 제14권3호
• /
• pp.120-123
• /
• 2009

In this study, BiFe$O_3$-BaTi$O_3$ ceramics have been fabricated by a solid-state reaction method. The effects of BaTi$O_3$ content in the (1-x)BiFe$O_3$-xBaTi$O_3$ (x = 0.1, 0.2, 0.25, 0.3, 0.4, 0.5) system on crystal structure and magnetic, dielectric, and ferroelectric properties were investigated. Perovskite BiFe$O_3$ was stabilized through the formation of a solid solution with BaTi$O_3$. Rhombohedrally distorted structure (1-x)BiFe$O_3$-xBaTi$O_3$ ceramics showed strong ferromagnetism at x = 0.5. Dielectric and ferroelectric properties of the BiFe$O_3$-BaTi$O_3$ system also changed significantly upon addition of BaTi$O_3$. It was found that the maximum dielectric and ferroelectric properties were exhibited in the (1-x)BiFe$O_3$-xBaTi$O_3$ system at x = 0.25. This suggested the morphotropic phase boundary (MPB) with the coexistence of both rhombohedral and cubic phases of the (1-x)BiFe$O_3$-xBaTi$O_3$ system at x = 0.25.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.296-296
• /
• 2007

Ferroelectric neodymium-substituted $Bi_4Ti_3O_{12}$(BTO) thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process and the effect of crystallization temperature on their microstructure and ferroelectric properties were studied systematically. $Bi(TMHD)_3$, $Nd(TMHD)_3$, $Ti(O^iPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from 600 to $720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The crystallinity of the BNT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The polarization values of the films were a monotonous function of the crystallization temperature. The remanent polarization value of the BNT thin films annealed at $720^{\circ}C$ was $24.82\;{\mu}C/cm^2$ at an applied voltage of 5 V.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.169-170
• /
• 2006

In this study, ultra thin films of ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer were fabricated on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000~5000rpm for 30 seconds. After annealing in a vacuum ambient at $200^{\circ}C$ for 60 min, upper gold electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on $n^+$-Si(100) wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the dielectric films have ferroelectric properties. The typical measured remnant polarization (2Pr) and coercive filed (EC) values measured using a computer controlled a RT-66A standardized ferroelectric test system (Radiant Technologies) were about $0.54\;C/cm^2$ and 172 kV/cm, respectively, in an applied electric field of ${\pm}0.75\;MV/cm$.

• 한국표면공학회지
• /
• 제56권6호
• /
• pp.380-385
• /
• 2023

In this study, an MPB PMNT system containing 0.05 to 0.10 wt.% BaTiO₃ was synthesized using a traditional chemical method and its pyroelectricity was investigated. Pyroelectricity, dielectricity, and ferroelectricity of the synthesized BaTiO₃-PMNT system were analyzed by heat treatment at 1240~1280 ℃ for 4 hours to evaluate its applicability as a pyroelectric sensor. Unlike the simple ABO₃ ferroelectric, the BaTiO₃-doped PMNT system exhibited phase transition characteristics over a wide temperature range typical of complex perovskite structures. Although no dramatic change could be confirmed depending on the amount of BaTiO₃ added, stable pyroelectricity was maintained near room temperature and over a wide temperature range. When the amount of BaTiO₃ added increased from 0.05BaTiO₃-PMNT to 0.10BaTiO₃-PMNT, the electric field slightly increased from 5.00×10³ kV/m to 6.75×10³ kV/m, and the maximum value of remanent polarization slightly increased from 0.223 C/m² to 0.234 C/m². The pyroelectric coefficients of 0.05BaTiO₃-PMNT and 0.10BaTiO₃- PMNT at room temperature were measured to be ~0.0084 C/m²K and ~0.0043 C/m²K, respectively. The relaxor ferroelectric properties of the BaTiO₃-PMNT system were confirmed by analyzing the plot of K_max/K versus (T-T_max)^γ. The BaTiO₃-doped MPB PMNT system showed a distinct pyroelectric performance index at room temperature, and the values were F_v ~ 0.0362 m²/C, F_d ~ 0.575×10^-4 Pa^-1/2.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.260-260
• /
• 2013

Multiferroic materials have attracted much attention due to their fascinating fundamental physical properties and technological applications in magnetic/ferroelectric data-storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3 $ is a typical multiferroic material with a room temperature magnetoelectric coupling in view of high magnetic-and ferroelectric-ordering temperatures (Neel temperature $T_N$~647 K and Curie temperature $T_C$~1,103 K). Rare-earth ion substitution at the Bi sties is very interesting, which induces suppressed volatility of Bi ion and improved ferroelectric properties. At the same time, Fe-site substitution with magnetic ions is also attracting, and the enhanced ferromagnetism was reported. In this study, $Bi_{1-x}Dy_xFe_{0.95}Co_{0.05}O_3$ (x=0, 0.05 and 0.1) bulk ceramic compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Dy_2O_3$, $Fe_2O_3$ and $Co_3O_4$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ or 24 h to produce $Bi_{1-x}Dy_xFe_{0.95}Co_{0.05}O_3$. The samples were immediately put into an oven, which was heated up to $800^{\circ}C$ nd sintered in air for 30 min. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The electric polarization was measured at room temperature by using a standard ferroelectric tester (RT66B, Radiant Technologies).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.851-856
• /
• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.

• 한국결정성장학회지
• /
• 제25권4호
• /
• pp.160-165
• /
• 2015

Lead-free piezoelectric materials have been actively studied to substitute for conventional PZT based solid solution, $Pb(Zr_xTi_{1-x}O_3)$, which occurs unavoidable PbO during the sintering process. Among them, Bismuth Sodium Titanate, $Na_{0.5}Bi_{0.5}TiO_3$ (abbreviated as NBT) based solid solution is attracted for the one of excellent candidates which shows the strong ferroelectricity, Curie temperature (Tc), remnant polarization (Pr) and coercive field (Ec). Especially, the solid solution of rhombohedral phase NBT with tetragonal perovskite phase has a rhombohedral - tetragonal morphotropic phase boundary. Modified NBT with tetragonal perovskite at the region of MPB can be applied for high frequency ultrasonic application because of not only its low permittivity, high electrocoupling factor and high mechanical strength, but also effective piezoelectric activity by poling. In this study, solid state ceramic processing of NBT and modified NBT, $(Na_{0.5}Bi_{0.5})_{0.93}Ba_{0.7}TiO_3$ (abbreviated as NBT-7BT), at the region of MPB using 7 % $BaTiO_3$ as a tetragonal perovskite was introduced and the structure between NBT and NBT-7BT were analyzed using rietveld refinement. Also, the ferroelectric and piezoelectric properties of NBT-7BT such as permittivity, piezoelectric constant, polarization hysteresis and strain hysteresis loop were compared with those of pure NBT.

• 한국결정성장학회지
• /
• 제9권5호
• /
• pp.463-469
• /
• 1999

$K_3$$Li_2$$Nb_5$$O_{15}$KLN) 단결정을 $K_x$$Li_{1-x}$$NbO_3$의 조성에서 x= 0.04~0.6으로 결정성장방법으로 성장시켰다. 균열이 없는 양질의 결정성장을 위해 c축 및 a축 방향을 택하였고, 단결정 성장을 위한 최적의 조건에 대하여 연구하였다. 성장된 결정은 편광현미경 관찰을 통해 일축성 무늬를 볼수 있었고, X-선 회절실험에서 결정된 격자상수는 a=b=12.500 $\AA$, c=3.996$\AA$이었으며, 1HF : $2HNO_3$ 용액의 부식에서 c축 방향으로 정사각형 및 a축 방향으로 직사각형의 부식상을 볼수 있었다. 광투과율 측정과 온도에 따른 유전상수 측정등을 통해 KLN 결정의 광학적 특성 및 다른 조성을 갖는 시료에서 유전특성을 조사하였다. $420^{\circ}C$에서 상전이 온도를 갖는 결정은 확산상전이(diffuse phase transition) 특성을 갖는 반면 $493^{\circ}C$에서 상전이 온도를 보이는 결정은 날카로운(shap) 유전특성을 나타내었다.

• 한국전기전자재료학회논문지
• /
• 제35권5호
• /
• pp.516-521
• /
• 2022

We investigated the microstructure, crystal structure, dielectric, and elecromechanical strain properties of lead-free BaTiO₃ (BT)-modified (Bi_1/2Na_1/2)TiO₃-SrTiO₃ (BNT-ST) piezoelectric ceramics. Samples were prepared by a conventional ceramic processing route. Temperature dependent dielectric properties confirmed that a phase transition from a nonergodic relaxor to an ergodic relaxor was induced when the BT concentration reached 1.5 mol%, interestingly, where the average grain size reached a maximum value of 4.5 ㎛. At the same time, enhanced electromechanical strain (S_max/E_max = 600 pm/V) was obtained. It is suggested that the induced ferroelectric-relaxor phase transition by the BT modification is responsible for the enhancement of electromechanical strain in 1.5 mol% BT-modified BNT-ST ceramics.