• 제목/요약/키워드: Ferroelectric domain

검색결과 84건 처리시간 0.022초

(Pb,La)$TiO_3$ 강유전체 세라믹에서 분역반전과 Acoustic Emission의 관계 (The Relationship between Domain Switching and Acoustic Emission in (Pb,La)$TiO_3$ Ferroelectric Ceramacs)

  • 최동구;최시경
    • 한국세라믹학회지
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    • 제33권6호
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    • pp.672-678
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    • 1996
  • The relationship between domain switching and acoustic emission (AE) during poling was investigated using the tetragonal ferroelectric ceramics with composition of (Pb,La)TiO3+0.01MnO2 The amount of AE generation during poling increased with increasing dc electric field and raising temperature. It was confirmed that the change of the amount of AE generation with poling condition resulted from the difference of the amount of 90$^{\circ}$ domain switching and total amount of AE generation for 10 minutes was approximately proportional to the amount of 90$^{\circ}$domain switching. The A generations of two specimens which have different tetragonality rations(c/s rations) 15 at% and 24at% La-doped were also investigated. The sample with c/a ratio of 1.012 where 90$^{\circ}$ domains are dominate had larger amount of AE generation and 90$^{\circ}$ domain switching compared with the sample with c/a ratio of 1.004 where 180$^{\circ}$ domains are dominant.

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강유전 요업체에서의 평형분역 크기 (Equilibrium Size of Domains in Ferroelectric Ceramics)

  • 정훈택;김호기
    • 한국세라믹학회지
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    • 제29권6호
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    • pp.459-462
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    • 1992
  • It has been reported that the size and characteristics of ferroelectric domains which have an essential role on the ferroelectric properties depend on the grain size of ferrolectric ceramics. Therefore understanding the change of domain characteristics with grain size is so important to know the dependence of dielectric constant, dielectric loss and aging on the grain size. In this research, the equilibrim domain with is calculated as d={{{{ SQRT { { 64 pi sigma a} over {3C11Ss2 } } }}. This calculated value is nearly same to the measured value of BaTiO3 and Pb(Zr0.4Ti0.6)O3 ceramics 90$^{\circ}$domain wall width. The calculated 90$^{\circ}$domain wall enerygy in Pb(Zr0.4Ti0.6)O3 which is obtained through the model is approximately 2$\times$10-2J/$m^2$.

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Scanning Nonlinear Dielectric Microscopy : Overview -A High Resolution Tool for Observing Ferroelectric Domains and Nano-domain Engineering-

  • Cho, Yasuo
    • 한국세라믹학회지
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    • 제40권11호
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    • pp.1047-1057
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    • 2003
  • A sub-nanometer resolution Scanning Nonlinear Dielectric Microscope (SNDM) was developed for observing ferroelectric polarization. We also demonstrate that the resolution of SNDM is higher than that of a conventional piezo-response imaging. Secondly, we report new SNDM technique detecting higher nonlinear dielectric constants $\varepsilon$$\_$3333/ and $\varepsilon$$\_$33333/. Higher order nonlinear dielectric imaging provides higher lateral and depth resolution. Finally, the formation of artificial small inverted domain is reported to demonstrate that SNDM system is very useful as a nano-domain engineering tool. The nano-size domain dots were successfully formed in LiTaO$_3$ single crystal. This means that we can obtain a very high density ferroelectric data storage with the density above 1T-bits/inch$^2$.

$PbZrO_3$가 첨가된 $Pb(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3$ 계의 미소-거시 분역 반전과 열탄성 마르텐사이트 변태 (Micro-Macro Domain Switching and Thermoelastic Martensitic Transformation in $PbZrO_3$-doped $Pb(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3$ System)

  • 윤만순;장현명
    • 한국세라믹학회지
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    • 제32권9호
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    • pp.967-976
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    • 1995
  • The possiblity of the existence of a spontaneous relaxor-normal ferroelectric transition was proposed and examined using 1~5 mol% PbZrO3-doped Pb(Ni1/3Nb2/3)O3-PbTiO3 (PNN-PT) systems having tetragonal symmetry at rom temperature. On cooling, the system with 60mol% Pb(Ni1/3Nb2/3)O3 underwent a spontaneous transition from a relaxor to a normal ferroelectric state. A microscopic examination demonstrates that the relaxornormal ferroelectric transition corresponds to a micro-macro domain switching accompanied with thermoelastic martensitic transformation. The long-range macrodomains below the transition temperature were characterized by twinlike 90$^{\circ}$macrodomains with tetragonal symmetry. The relaxor-normal ferroelectric transition was further correlated with the rhombohedral-tetragonal first-order structural transition.

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Ferroelastic Domain Wall Motions in Lead Zirconate Titanate Under Compressive Stress Observed by Piezoresponse Force Microscopy

  • Kim, Kwanlae
    • 한국전기전자재료학회논문지
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    • 제30권9호
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    • pp.546-550
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    • 2017
  • Ferroelectric properties are governed by domain structures and domain wall motions, so it is of significance to understand domain evolution processes under mechanical stress. In the present study, in situ piezoresponse force microscopy (PFM) observation under compressive stress was carried out for a near-morphotropic PZT. Both $180^{\circ}$ and $non-180^{\circ}$ domain structures were observed from PFM images, and their habit planes were identified using electron backscatter diffraction in conjunction with PFM data. By externally applied mechanical stress, needle-like $non-180^{\circ}$ domain patterns were broadened via domain wall motions. This was interpreted via phenomenological approach such that the total energy minimization can be achieved by domain wall motion rather than domain nucleation mainly due to the local gradient energy. Meanwhile, no motion was observed from curvy $180^{\circ}$ domain walls under the mechanical stress, validating that $180^{\circ}$ domain walls are not directly influenced by mechanical stress.

Ferroelectric ultra high-density data storage based on scanning nonlinear dielectric microscopy

  • Cho, Ya-Suo;Odagawa, Nozomi;Tanaka, Kenkou;Hiranaga, Yoshiomi
    • 정보저장시스템학회논문집
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    • 제3권2호
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    • pp.94-112
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    • 2007
  • Nano-sized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning non-linear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, we succeeded to form an smallest artificial nano-domain single dot of 5.1 nm in diameter and artificial nano-domain dot-array with a memory density of 10.1 Tbit/$inch^2$ and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date. Sub-nanosecond (500psec) domain switching speed also has been achieved. Next, long term retention characteristic of data with inverted domain dots is investigated by conducting heat treatment test. Obtained life time of inverted dot with the radius of 50nm was 16.9 years at $80^{\circ}C$. Finally, actual information storage with low bit error and high memory density was performed. A bit error ratio of less than $1\times10^{-4}$ was achieved at an areal density of 258 Gbit/inch2. Moreover, actual information storage is demonstrated at a density of 1 Tbit/$inch^2$.

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$BaTiO_3$의 {111}쌍정계면과 강유전 분역의 배향성 (Orientation States of Ferroelectric Domains and {111} Twins in $BaTiO_3$)

  • 박봉모;정수진
    • 한국세라믹학회지
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    • 제33권2호
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    • pp.228-234
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    • 1996
  • 강유전성 BaTiO3의 분역 구조를 이해하는 것은 폴링과정에 있어서 대단히 중요하면 대부분의 BaTiO3 세라믹스에서 흔히 발견되는 구조 쌍정 계면에서의 배향관계는 아직까지 보고된 바 없다. 본 연구에서는 {111} 쌍정을 이루고 있는 길정시편을 이용하여 편광현미경하에서 분역구조를 관찰하고, 열처리에 의하여 상전이되는 동안 {111} 쌍정과 강유전성 분역의 거동을 현미경하에서 직접적으로 관찰하였다. {111} 쌍정면 암측으로 대칭적 분역구조가 발될되며, 그 배열 형태는 'V'자 모양과 수직하게 관통하는 것처럼 직선 모양의 두가지 형으로 분류된다. 열처리에 의하여 새로운 분역구조가 형성될때 {111} 쌍정면 주위에서는 대칭적 관계를 유지하면서 분역이 발달되며, 분역형성에 기인하는 표면변형도 {111} 쌍정에 대하여 항상 대칭적으로 발달된다. 이는 {111} 계면에서도 분극반향이 바뀌어지며 "머리-꼬리"의 전지적 안정성의 배향관계를 유지하는 것으로 설명할 수 있다.

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상부전극 두께가 우선방위를 갖는 $Pb(Zr, Ti)O_3$ 박막의 강유전체 특성에 미치는 영향 (Effects of Top Electrode Thickness on Ferroelectric Properties of Preferentially Oriented $Pb(Zr, Ti)O_3$Thin Films)

  • 고가연;이은구;이종국;박진성;김선재
    • 한국세라믹학회지
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    • 제36권10호
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    • pp.1035-1039
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    • 1999
  • Ferroelectric properties and reliability characteristics of(111) and (100) preferentially oriented tetragonal Pb(Zr0.2Ti0.8)O3 (PZT) thin film capacitors have been investigated as a function of the top electrode thickness. The (111) preferentially oriented film exhibits 180$^{\circ}$domain switching process with better squareness of hysterisis loop and abrupt change of small singal capacitance-voltage comparing to the (100) preferentially oriented film having 90$^{\circ}$ domain switching process. The domain swithcing process of tetragonal phase PZT is different from that of rhobohedral phase. The film with thinner top electrode shows less initial switching polarization due to less compressive stress but it exhibits better endurance characteristics due to enhancing partial switching region.

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전기장이 강유전체 내의 균열킹크에 미치는 영향 (Effect of Electric Fields on Crack Kinking in Ferroelectrics)

  • 이종식;범현규
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 추계학술대회
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    • pp.1206-1210
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    • 2003
  • Effect of transverse electric field on crack kinking in ferroelectric ceramics subjected to purely electric loading is investigated. It is shown that the shape and size of the domain switching zone depends strongly on the direction of the applied electric field as well as the ratio of the transverse electric field to the coercive electric field. Under small-scale conditions, mode I and II stress intensity factors induced by ferroelectric domain switching are numerically obtained. The crack kinking in ferroelectrics is also discussed.

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전기장을 받는 강유전체 세라믹내의 균열 해석 (Analysis of a Crack in Ferroelectric Ceramics Subjected to Electric Fields)

  • 범현규;김인옥
    • 한국정밀공학회지
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    • 제20권6호
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    • pp.138-144
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    • 2003
  • A crack in a ferroelectric ceramic subjected to an electric field is analyzed. The boundary of the electrical saturation zone is estimated based on the finite-width saturation zone model, which is analogous to a finite-width Dugdale zone model for mode III. It is shown that the shape and size of the switching zone depends strongly on the boundary of the electrical saturation zone and the ratio of the coercive electric field to the yield electric field. The crack tip stress intensity factor under small scale conditions is evaluated by employing the model of electric nonlinear domain switching. It is found that fracture toughness of the ferroelectric material may be increased or decreased depending on the material property of electrical nonlinearity.