• 한국정보통신학회논문지
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• 제10권9호
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• pp.1617-1624
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• 2006

본 논문은 분산전원시스템(DGS)을 위 한 시스템 모델링, 수정된 SVPWM 적용 그리고 수동소자인 L과 C로 구성된 Z-원 인버터의 제어기에 대하여 기술하였다. 기존의 DC/DC 승압 컨버터나 변압기를 사용하지 않고 낮은 DC 입력을 상용 AC로 만들기 위해서 SVPWM의 영벡터 구간을 이용해 DC-링크단 전압을 승압하는데 이용하였다. 한 스위칭주기에 3개조의 스위칭소자 중에 2개조만 동시 도통되도록 하여 유효벡터의 손실 없이 승압이 가능하도록 하였다. 빠르고 오버슈트가 없는 전류응답과 낮은 정상상태 전압오차를 얻기 위해서 이산시간 슬라이딩모드 전류제어기와 강인한 서보기구 전압제어기를 설계하였다. 시뮬레이션을 통하여 제안된 알고리즘의 유용성을 확인하였다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1999년도 전력전자학술대회 논문집
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• pp.234-238
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• 1999

In order to radiate X-ray, the low ripple stabilized high voltage DC over the range of 40KV to 150KV is directly inflicted to X-ray tube. The energy characteristics of the radiated X-ray depend on the pulsating waveforms of the DC voltage supplied X-ray tube. In general, the low ripple voltage waveforms with fast rising times are required to increase with the dosage per unit time lest the exposure time should be longer in orde that the motion artifacts of an object may be eliminated in actual. The conventional types of X-ray generators were bulky in physical size and heavy in weight, and the control accuracies of the output voltages were not always satisfactory. The high frequency switching inverter and converter technology on power conversion and control systems have been greatly closed up introducing new power semiconductor devices. To decreasing the volume and the weight of high voltage transformer, and to stabilize ripple, a high frequency PWM inverter is connected between DC source and high voltage transformer. This paper describes the output characteristics according to stabilize ripple of X-ray tube voltage and compared the reproducibility, direcibility and doesage.

• 한국통신학회논문지
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• 제22권10호
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• pp.2136-2149
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• 1997

본 논문에서는 PDA나 PCS와 같은 내장형 응용을 위한 RISC 코어를 설계하였다. 이 RISC 프로세서는 내장형 응용의 중요한 특성인 빠른 인터럽트 핸들링, 빠른 컨텍스트 스위칭과 저전력 소모를 지원한다. 또한 조건부로 수행 가능한 명령어 군과 블럭 전송 명령 그리고 곱셈 명령을 이용하여 프로세서의 성능을 향상시켰다. 3단 파이프라인을 이용하였으며 2-phase 클럭을 사용한 단일 사이클 명령어 수행이 가능하다. 이 프로세서는 $5.0{\times}5.0mm^2$의 면적에 약 88,000개의 트랜지스터가 집적되었으며 $0.6{\mu}\textrm{m}$ 삼중 금속 단일 폴리 공정을 이용하여 레이아웃 되었다. 최대 동작 주파수는 40MHz이며 예상 전력 소비는 179mW이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.20-24
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• 1989

The time optimal position control scheme can be repeatedly taken from the initial state of a dynamic system to a desired one as fast as possible at the industrial drives. In this case, the machine parameters will vary due to temperature, frequency, and saturation effects. In particular, the rotor resistance value changes dramatically with temperature and frequency. These changes affect the command values of the stator current components and slip speed. There is a mismatch between the commanded variables and actual variables of the induction motor drive, and this situation leads to decoupling of the vector controller from the plant, i.e the induction motor. Consequences of such decoupling include the initiation of oscillations of the rotor flux and unsuitable switching of electromagnetic torque of the induction motor servo drive. Therefore, a rotor resistance parameter compensating method for the induction motor is described.

• 대한전기학회논문지:시스템및제어부문D
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• 제54권10호
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• pp.587-594
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• 2005

An adaptive observer for rotor resistance is designed to estimate rotor flux for the a-b model of an induction motor assuming that rotor speed and stator currents are measurable. A singularly perturbed model of the motor is used to design an Adaptive sliding mode observer which drives the estimated stator currents to their true values in the fast time scale. The adaptive observer on the sliding surface is based on the equivalent switching vector and both the estimated fluxes and the estimated rotor resistance converge to their true values. A speed controller considering the effects of parameter variations and external disturbance is proposed in this paper. First, induction motor dynamic model at nominal case is estimated. based on the estimated model, speed controller is designed to match the prescribed speed tracking specifications. Then a dead-time compensator and a robust controller are designed to reduce the effects of parameter variations and external disturbances. the desired speed tracking control performance can be preserved under wide operating range, and good speed load regulating performance. Some simulated results are provided to demonstrate the effectiveness of the Proposed controller.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1308-1313
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• 2004

Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.270-270
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• 2010

OLED device is one of the most attractive and alternative display components, which stems primarily from the self-emission, large intrinsic viewing angle, and fast switching speed. However, because of its relatively short history of development, much remains to be studied in terms of its basic device physics, manufacturing processes, and reliability etc. Especially among several issues, it should be noted that the device characteristics are very sensitive to the surface properties of transparent conducting oxide (TCO) electrode materials. In this study, we have investigated the performance of OLED devices as a function of sheet resistance and surface roughness of TCO thin films. For this purpose, ITO and IZO thin films were deposited by r. f. magnetron sputtering under various ambient gases (Ar, Ar+O2 and Ar+H2, respectively). The crystal structure and surface morphology were examined by using XRD and FESEM. Also, electrical and optical properties were Investigated.

• 전기학회논문지
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• 제65권1호
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• pp.88-96
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• 2016

In this paper, the GaN FET based phase-shift full-bridge dc-dc converter design is implemented. Switch characteristics of GaN FET were analyzed in detail by comparing state-of-the-art Si MOSFET. Owing to the low conduction resistance and parasitic capacitance, it is expected to GaN FET based power conversion system has improved performance. However, GaN FET is vulnerable to electric interference due to the relatively low threshold voltage and fast switching transient. Therefore, it is necessary to consider PCB layout to design GaN FET based power system because PCB layout is the main reason of stray inductance. To reduce the electric noise, gate voltage of GaN FET is analyzed according to operation mode of phase-shift full-bridge dc-dc converter. Two 600W phase-shifted full-bridge dc-dc converter are designed based on the result to evaluate effects of stray inductance.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.185-196
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• 2002

MRAM(magnetic random access memory) is a promising candidate for a universal memory with non-volatile, fast operation speed and low power consumption. The simplest architecture of MRAM cell is a combination of MTJ(magnetic tunnel junction) as a data storage part and MOS transistor as a data selection part. This article will review the general development status of MRAM and discuss the issues. The key issues of MRAM technology as a future memory candidate are resistance control and low current operation for small enough device size. Switching issues are controllable with a choice of appropriate shape and fine patterning process. The control of fabrication is rather important to realize an actual memory device for MRAM technology.

• 대한전자공학회논문지TC
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• 제37권1호
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• pp.88-97
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• 2000

초고속이면서 소요 메모리의 크기를 극소화한 IP 라우터용 Lookup 알고리즘을 제안하고 성능을 분석하였다. 메모리 크기가 작으므로 고속/고가의 SRAM(10ns)을 사용할 수 있고, 구조가 간단하여 하드웨어로 구현 가능하였다. 본 장치는 1${\sim}$3회의 메모리 접근을 통해 Lookup이 가능하고, IPMA 사이트에서 구한 40,000개의 라우팅 정보를 이용하여 시뮬레이션한 결과 대략 ${\sim}$316KB의 포워딩 테이블용 메모리만이 소요된다. 이때 압축을 수행하는 옵셋 임계치는 8이다. ALTERA EPM7256시리즈에 100MHz 클럭을 이용하여 모사시험한 결과 10ns 접근속도를 가진 SRAM 기준으로 2회의 메모리 접근만으로 Lookup하는 경우 45ns의 접근시간이 소요되며, 3회의 메모리 접근이 필요한 경우는 ${\sim}$177ns의 접근시간이 소요된다.