Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of Ultra Fast Recovery Diodes using Proton Irradiation Technique

양성자 주입 기술을 이용한 초고속 회복 다이오드의 제작

  • 이강희 (경북대학교 전자공학과) ;
  • 김병길 (위덕대학교 정보통신공학부) ;
  • 이용현 (경북대학교 전자공학과) ;
  • 백종무 (대원과학대학 전자정보통신과) ;
  • 이재성 (위덕대학교 정보통신공학부) ;
  • 배영호 (위덕대학교 정보통신공학부)
  • Published : 2004.12.01
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Abstract

Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.

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References

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