• Title/Summary/Keyword: Fast Switching

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Transformerless DGS Control using a Z-source Boost Inverter (Z-원 승압인버터를 이용한 변압기 없는 DGS제어)

  • Park Young-San
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.9
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    • pp.1617-1624
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    • 2006
  • This paper presents system modeling, modified space vector PWM implementation and design of a closed loop controller of the Z-source inverter which consists of L and C components and shoot-through zero vectors for DGS. Zero vector periods of SVPWM utilized to boost DC-link voltage instead of conventional DC/DC converter and transformer. Only two shoot-through vut(nn are used for DC link voltage control during one switching period without loss of non-zero vectors. Discrete time sliding mode controller, robust servomechanism controller are designed to realize fast and no-overshoot current response and a steady state voltage error. Simulation results are shows the effectiveness of the proposed algorithm.

A Study on the Improvement of ripple factor tube voltage waveforms in inverter type X-ray generator (인버터식 X선장치의 관전압 맥동율 개선에 관한 연구)

  • 이성길;임홍우;조금배;정수복;백형래
    • Proceedings of the KIPE Conference
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    • 1999.07a
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    • pp.234-238
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    • 1999
  • In order to radiate X-ray, the low ripple stabilized high voltage DC over the range of 40KV to 150KV is directly inflicted to X-ray tube. The energy characteristics of the radiated X-ray depend on the pulsating waveforms of the DC voltage supplied X-ray tube. In general, the low ripple voltage waveforms with fast rising times are required to increase with the dosage per unit time lest the exposure time should be longer in orde that the motion artifacts of an object may be eliminated in actual. The conventional types of X-ray generators were bulky in physical size and heavy in weight, and the control accuracies of the output voltages were not always satisfactory. The high frequency switching inverter and converter technology on power conversion and control systems have been greatly closed up introducing new power semiconductor devices. To decreasing the volume and the weight of high voltage transformer, and to stabilize ripple, a high frequency PWM inverter is connected between DC source and high voltage transformer. This paper describes the output characteristics according to stabilize ripple of X-ray tube voltage and compared the reproducibility, direcibility and doesage.

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A design of 32-bit RISC core for PDA (PDA를 위한 32비트 RISC 코어의 설계)

  • 곽승호;최병윤;이문기
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.10
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    • pp.2136-2149
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    • 1997
  • This paper describes RISC core that has been designed for embedded and protable applications such as PDA or PCS. This RISC processor offers low power consumption and fast context switching. Processor performance is improved by using conditional instruction execution, block data transfer instruction, and multiplication instruction. This architecture is based on RISC principles. The processor adopts 3-stage instruction execution pipeline and has achieved single cycle execution using a 2-phase 40MHz clock. This results in a high instruction throughput and real-time interrupt response. This chip is implemented with $0.6{\mu}m$ triple metal CMOS technology and consists of about 88K transistors. The estimated power dissipation is 179mW.

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A Study On Parameter Compensation Scheme in Vector Controlled Induction Motor Drive (벡터제어 유도전동기 구동의 파라메터 보상에 대한 연구)

  • Park, Min-Ho;Kim, Young-Real;Won, Chung-Yuen;Kim, Tae-Hoon;Kim, Yuen-Jun
    • Proceedings of the KIEE Conference
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    • 1989.11a
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    • pp.20-24
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    • 1989
  • The time optimal position control scheme can be repeatedly taken from the initial state of a dynamic system to a desired one as fast as possible at the industrial drives. In this case, the machine parameters will vary due to temperature, frequency, and saturation effects. In particular, the rotor resistance value changes dramatically with temperature and frequency. These changes affect the command values of the stator current components and slip speed. There is a mismatch between the commanded variables and actual variables of the induction motor drive, and this situation leads to decoupling of the vector controller from the plant, i.e the induction motor. Consequences of such decoupling include the initiation of oscillations of the rotor flux and unsuitable switching of electromagnetic torque of the induction motor servo drive. Therefore, a rotor resistance parameter compensating method for the induction motor is described.

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Sliding Mode Control of Induction Motors Using an Adaptive Sliding Mode Flux Observer (적응 슬라이딩모드 자속 관측기를 이용한 인덕션 모터의 슬라이딩 모드 제어)

  • Kim, Do-Woo;Chung, Ki-chull;Lee, Seng-Hak
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.54 no.10
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    • pp.587-594
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    • 2005
  • An adaptive observer for rotor resistance is designed to estimate rotor flux for the a-b model of an induction motor assuming that rotor speed and stator currents are measurable. A singularly perturbed model of the motor is used to design an Adaptive sliding mode observer which drives the estimated stator currents to their true values in the fast time scale. The adaptive observer on the sliding surface is based on the equivalent switching vector and both the estimated fluxes and the estimated rotor resistance converge to their true values. A speed controller considering the effects of parameter variations and external disturbance is proposed in this paper. First, induction motor dynamic model at nominal case is estimated. based on the estimated model, speed controller is designed to match the prescribed speed tracking specifications. Then a dead-time compensator and a robust controller are designed to reduce the effects of parameter variations and external disturbances. the desired speed tracking control performance can be preserved under wide operating range, and good speed load regulating performance. Some simulated results are provided to demonstrate the effectiveness of the Proposed controller.

Fabrication of Ultra Fast Recovery Diodes using Proton Irradiation Technique (양성자 주입 기술을 이용한 초고속 회복 다이오드의 제작)

  • Lee, Kang-Hee;Kim, Byoung-Gil;Lee, Yong-Hyun;Baek, Jong-Mu;Lee, Jae-Sung;Bae, Young-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1308-1313
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    • 2004
  • Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.

Effect of the structural and electrical characteristics of TCO thin films on the performance of OLED devices (TCO 박막의 구조 및 전기적 특성에 따른 OLED 소자의 특성)

  • Lee, Bong-Kun;Lee, Yu-Lim;Lee, Kyu-Mann
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.270-270
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    • 2010
  • OLED device is one of the most attractive and alternative display components, which stems primarily from the self-emission, large intrinsic viewing angle, and fast switching speed. However, because of its relatively short history of development, much remains to be studied in terms of its basic device physics, manufacturing processes, and reliability etc. Especially among several issues, it should be noted that the device characteristics are very sensitive to the surface properties of transparent conducting oxide (TCO) electrode materials. In this study, we have investigated the performance of OLED devices as a function of sheet resistance and surface roughness of TCO thin films. For this purpose, ITO and IZO thin films were deposited by r. f. magnetron sputtering under various ambient gases (Ar, Ar+O2 and Ar+H2, respectively). The crystal structure and surface morphology were examined by using XRD and FESEM. Also, electrical and optical properties were Investigated.

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Design and Implementation of an Optimal Hardware for a Stable Operating of Wide Bandgap Devices (Wide Bandgap 소자의 안정적 구동을 위한 하드웨어 최적 설계 및 구현)

  • Kim, Dong-Sik;Joo, Dong-Myoung;Lee, Byoung-Kuk;Kim, Jong-Soo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.1
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    • pp.88-96
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    • 2016
  • In this paper, the GaN FET based phase-shift full-bridge dc-dc converter design is implemented. Switch characteristics of GaN FET were analyzed in detail by comparing state-of-the-art Si MOSFET. Owing to the low conduction resistance and parasitic capacitance, it is expected to GaN FET based power conversion system has improved performance. However, GaN FET is vulnerable to electric interference due to the relatively low threshold voltage and fast switching transient. Therefore, it is necessary to consider PCB layout to design GaN FET based power system because PCB layout is the main reason of stray inductance. To reduce the electric noise, gate voltage of GaN FET is analyzed according to operation mode of phase-shift full-bridge dc-dc converter. Two 600W phase-shifted full-bridge dc-dc converter are designed based on the result to evaluate effects of stray inductance.

MRAM Technology for High Density Memory Application

  • Kim, Chang-Shuk;Jang, In-Woo;Lee, Kye-Nam;Lee, Seaung-Suk;Park, Sung-Hyung;Park, Gun-Sook;Ban, Geun-Do;Park, Young-Jin
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.3
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    • pp.185-196
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    • 2002
  • MRAM(magnetic random access memory) is a promising candidate for a universal memory with non-volatile, fast operation speed and low power consumption. The simplest architecture of MRAM cell is a combination of MTJ(magnetic tunnel junction) as a data storage part and MOS transistor as a data selection part. This article will review the general development status of MRAM and discuss the issues. The key issues of MRAM technology as a future memory candidate are resistance control and low current operation for small enough device size. Switching issues are controllable with a choice of appropriate shape and fine patterning process. The control of fabrication is rather important to realize an actual memory device for MRAM technology.

A Novel IP Forwarding Lookup Scheme for Fast Gigabit IP Routers (초고속 IP 라우터를 위한 새로운 포워딩 Lookup 장치)

  • Kang, Seung-Min;Song, Jae-Won
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.37 no.1
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    • pp.88-97
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    • 2000
  • We have proposed and analysed a novel Lookup Algorithm which had a short switching speed and tiny memory size for IP router. This algorithm could simply be implemeted by a hardware with SRAM because of simple structure. This Lookup scheme needs 1${\sim}$3 memory access times. When we simulated with 40,000 routing record obtained from IPMA Website, the maximum memory size of this algorithm was 316KB(the offset threshold for compression algorithm was 8). When we simulated by HDL using ALTERA EPM7256 series and 100MHz clock and SRAM of 10ns access time, the total lookup time was 45ns for two memory access, 175ns for three memory access.

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