• Earthquakes and Structures
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• 제16권2호
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• pp.221-234
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• 2019

Today, many important concrete face rockfill dams (CFRDs) have been built on the world, and some of these important structures are located on the strong seismic regions. In this reason, examination and monitoring of these water construction's seismic behaviour is very important for the safety and future of these dams. In this study, the nonlinear seismic behaviour of Ilısu CFR dam which was built in Turkey in 2017, is investigated for various reservoir water heights taking into account 1995 Kobe near-fault and far-fault ground motions. Three dimensional (3D) finite difference model of the dam is created using the FLAC3D software that is based on the finite difference method. The most suitable mesh range for the 3D model is chosen to achieve the realistic numerical results. Mohr-Coulomb nonlinear material model is used for the rockfill materials and foundation in the seismic analyses. Moreover, Drucker-Prager nonlinear material model is considered for the concrete slab to represent the nonlinearity of the concrete. The dam body, foundation and concrete slab constantly interact during the lifetime of the CFRDs. Therefore, the special interface elements are defined between the dam body-concrete slab and dam body-foundation due to represent the interaction condition in the 3D model. Free field boundary condition that was used rarely for the nonlinear seismic analyses, is considered for the lateral boundaries of the model. In addition, quiet artificial boundary condition that is special boundary condition for the rigid foundation in the earthquake analyses, is used for the bottom of the foundation. The hysteric damping coefficients are separately calculated for all of the materials. These special damping values is defined to the FLAC3D software using the special fish functions to capture the effects of the variation of the modulus and damping ratio with the dynamic shear-strain magnitude. Total 4 different reservoir water heights are taken into account in the seismic analyses. These water heights are empty reservoir, 50 m, 100 m and 130 m (full reservoir), respectively. In the nonlinear seismic analyses, near-fault and far-fault ground motions of 1995 Kobe earthquake are used. According to the numerical analyses, horizontal displacements, vertical displacements and principal stresses for 4 various reservoir water heights are evaluated in detail. Moreover, these results are compared for the near-fault and far-faults earthquakes. The nonlinear seismic analysis results indicate that as the reservoir height increases, the nonlinear seismic behaviour of the dam clearly changes. Each water height has different seismic effects on the earthquake behaviour of Ilısu CFR dam. In addition, it is obviously seen that near-fault earthquakes and far field earthquakes create different nonlinear seismic damages on the nonlinear earthquake behaviour of the dam.

• 한국전산구조공학회논문집
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• 제13권2호
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• pp.231-244
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• 2000

본 연구에서는 지하철구조물, 터널구조물 및 제방 등과 같은 2차원 지반-구조계의 지진응답해석을 위한 주파수영역 동적해석법을 제시하였다. 제시한 방법에서는 구조물과 구조물 주변 근역지반은 유한요소를 이용하고 원역지반은 주파수종속 동적무한요소를 이용하여 모형화하였다. 지진입력은 입력지진파를 수직으로 입사하는 P-파와 SV-파로 가정하여 자유장응답을 구하였으며 외부고정경계법을 적용하여 등가지진하중을 산정하였다. 본 연구기법의 검증을 위하여, 층상 자유장지반과 균질 반무한지반에 매입된 원동형 공동에 대하여 지진응답을 수행하였다. 이들을 다른 기법에 의한 해와 비교한 결과, 본 연구의 기법이 매우 정확함을 알 수 있었다. 마지막으로 지하철 역사의 지진응답해석 예제를 제시하여 본 연구의 적용성을 보였다.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.2053_2054
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• 2009

This paper studied about the characteristics of the Far Infrared Ray Radiant Oven. We decrease intensity of electromagnetic wave which depended on electric and magnetic field occured by the Far Infrared Ray Radiant Oven and then the affected effect on the human body is minimized.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.713-717
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• 2011

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

• 한국전기전자재료학회논문지
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• 제24권10호
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• pp.794-798
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• 2011

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.361-365
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• 2019

Although there is no strict definition of a power semiconductor device, a general description is a semiconductor that has capability to control more than 1 W of electricity. Integrated gate bipolar transistors (IGBTs), which are power semiconductors, are widely used in voltage ranges above 300 V and are especially popular in high-efficiency, high-speed power systems. In this paper, the size of the gate was adjusted to test the variation in the yield voltage characteristics by measuring the electric field concentration under the trench gate. After the experiment Synopsys' TCAD was used to analyze the efficiency of threshold voltage, on-state voltage drop, and breakdown voltage by measuring the P- region and its size under the gate.

• 한국광학회지
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• 제31권5호
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• pp.213-217
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• 2020

본 논문에서는 아디아바틱(adiabatic) 광섬유 테이퍼의 습식 식각 기반 제조 방법에 대해 보고하고 1550 nm 파장에서의 아디아바틱 성질 및 테이퍼드 광섬유에서 HE₁₁ 모드의 전개에 대해 설명하고자 한다. 제조한 결과물은 아디아바틱 성질을 잘 만족하며 far field 패턴 측정 결과로부터 테이퍼 전체에 걸쳐 고차 모드 커플링 없이 기본 HE₁₁ 모드가 유지되는 것을 보여준다. 측정한 far field 패턴의 경우에 시뮬레이션 결과와 잘 일치하는 것을 검증하였고, 테이퍼드 광섬유는 다수의 광자 응용에 적용할 수 있으며 특히 광섬유-칩 패기지에 적용할 수 있다. 시뮬레이션을 통해서 제작한 아디아바틱 광섬유 테이퍼를 모델링한 후 역방향 테이퍼드 실리콘 도파관 사이의 광 전송률 시뮬레이션을 살펴보았을 때, 1 dB 초과 손실(실리콘 도파관 각도 1°)이 약 ~60 ㎛ 길이라는 여유있는 공간 치수 공차를 보이며, 0.4 dB 미만의 삽입 손실(실리콘 도파관 각도 4°)을 보인다. 또한, 본 연구자들이 제시하는 아디아바틱 커플러가 O 밴드 및 C 밴드 대역을 넘어, 초 광대역 결합 효율 가능성을 보이는 것을 확인하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 V
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• pp.2749-2752
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• 2003

Magnetocardiography is a very weak biomagnetic field generated from the heart. Since the magnitude of the biomagnetic field is in the order of a few pico Tesla, it is measured with a superconducting quantum interference device (SQUID). SQUID is a transducer converting magnetic flux to voltage, however, its range of linear conversion is very restricted. In order to overcome the narrow dynamic range. a flux locked loop is used to feedback the output field with opposite polarity to the input field so that the total Held becomes zero. This prevents the operating point of the SQUID from moving too far away from the null point thereby escape from the linear region. In this paper, an emulator for the SQUID sensor and feedback coil is proposed. Magnetic courting between the original field and the generated field by the feedback coil is emulated by electronic circuits. By using the emulator, FLL circuits are analyzed and optimized without SQUID sensors. The emulator may be used as a test signal for multi-channel gain calibration and system maintenance.

• 한국안전학회지
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• 제20권2호
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• pp.50-55
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• 2005

This Paper Presents assessment of fuzzy measure Possibility far the electromagnetic field according to voltage fluctuation of the Jechon Area. To cope with substantial electromagnetic analysis, the safety assessment were analyzed the double 154kV T/L, 345kV T/L, Jechon-Ichon Jechon-Youngju, respectively. As the results of case study, in case of 345kV T/L, the electric field value was 11.4927kV/m, magnetic field value was 0.4622G at the Point about 7m away from the line in severest case. Tn assessment of fuzzy measure Possibility for the electromagnetic field, this paper use probability of fuzzy and measure of fuzziness technique.