• Journal of Powder Materials
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• v.17 no.1
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• pp.36-43
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• 2010

In present work, amorphous TiCuNi powders were fabricated by mechanical alloying process. Amorphization and crystallization behaviors of the TiCuNi powders during high-energy ball milling and subsequent microstructure changes were studied by X-ray diffraction and transmission electron microscope. TEM samples were prepared by the focused ion beam technique. The morphology of powders prepared with different milling times was observed by field-emission scanning electron microscope and optical microscope. The powders developed a fine, layered, homogeneous structure with milling times. The crystallization behavior showed that glass transition, $T_g$, onset crystallization, $T_x$, and super cooled liquid range ${\Delta}T=T_x-T_g$ were 628, 755 and 127K, respectively. The as-prepared amorphous TiCuNi powders were consolidated by spark plasma sintering process. Full densified TiCuNi samples were successfully produced by the spark plasma sintering process. Crystallization of the MA powders happened during sintering at 733K.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.438-444
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• 2003

A new method to measure residual stress in micron and nano scale films is described. In the theory it is based on Linear Elastic Fracture Mechanics. And in the techniques it depends on the combined capability of the focused ion beam (FIB) imaging system and of high-resolution digital image correlation (DIC) software. The method can be used for any film material (whether amorphous or crystalline) without thinning the substrate. In the method, a region of the film surface is highlighted and scanning electron images of that region taken before and after a long slot, depth a, is introduced using the FIB. The DIC software evaluates the displacement of the surface normal to the slot due to the stress relaxation by using features on the film surface. To minimize the influence of signal noise and rigid body movement, not a few, but all of the measure displacements are used for determining the real residual stress. The accuracy of the method has been assessed by performing measurements on a nano film of diamond like carbon (DLC) on glass substrate and on micro film of aluminum oxide thermally grown on Fecrally substrate. It is shown that the new method determines the residual stress ${\sigma}_R=-1.73$ GPa for DLC and ${\sigma}_R=-5.45$ GPa for the aluminum oxide, which agree quite well with ones measured independently.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.16-19
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• 2003

Ni thin films on the p-InP (In) substrates were grown at room temperature by using the ion beam-assisted deposition. In order to determine the work function of the Ni thin films, the $\gamma$values were measured as functions of the acceleration voltages by using Ne, Ar, $N_2$. and Xe ion sources. The dependences of the values on various gases and on the acceleration voltages of the focused ion beam were obtained to determine the work function of the Ni thin films. The value of the work function of the Ni thin films grown on the p-InP (100) substrate was 5.8 eV ~ 5.85 eV. These results provide important information on the electronic properties of Ni thin films grown on p-InP (100) substrates at room temperature.

• Applied Microscopy
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• v.47 no.2
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• pp.77-83
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• 2017

Drastic development of ubiquitous devices requires more advanced batteries with high specific capacitance and high rate capability. Large-area microstructure characterization across the stacks of cathode, electrolyte and anode might reveal the origin of the instability or degradation of batteries upon cycling charge. In this study, sample preparation methods to observe the cross-section view of the electrodes for battery in SEM and several imaging tips are reviewed. For an accurate evaluation of the microstructure, ion milling which flats the surface uniformly is recommended. Pros and cons of cross-section polishing (CP) with Ar ion and focused ion beam (FIB) with Ga ion were compared. Additionally, a modified but new cross-section milling technique utilizing precision ion polishing system (PIPS) which can be an alternative method of CP is developed. This simple approach will make the researchers have more chances to prepare decent large-area cross-section electrode for batteries.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.1
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• pp.44-51
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• 2005

Material degradation is a multibillion-dollar problem which affects all the industries amongst others. The last decades have seen the development of newer and more effective techniques such as Focused-ion beam(FIB), Transmission electron microscopy(TEM), Secondary-ion mass spectroscopy(SIMS), auger electron spectroscopy(AES), X-ray Photoelectron spectroscopy(XPS) , Electrochemical impedance spectroscopy(EIS), Photo- stimulated luminescence spectroscopy(PSLS), etc. to study various forms of material degradation. These techniques are now used routinely to obtain information on the chemical state, depth profiling, composition, stress state, etc. to understand the degradation behavior. This paper describes the use of these techniques specifically applied to materials degradation and failure analysis.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.845-848
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• 2007

Analysis of point defects invisible by a microscope has been studied on the a-Si thin film transistor panel. The point defects which were named Invisible Point Defect (IPD) is characterized by no particles or distortion of patterns on a pixel structure and randomly distributed on panels. To investigate the IPD, measurements were carried out: gray level driving, transistor transfer characteristic, focused ion beam (FIB), and secondary ion mass spectrometry (SIMS). The results showed that a contamination layer had a bad influence on an active surface. The contamination layer consisted of oxygen and iron from a water supply line during cleaning process. After the process tuning, IPD has been stabilized.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.202-202
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• 2000

AC-PDP(Plasma Display Paner)는 기체 방전을 이용한 디스플레이로서 기체에 직접 노출되는 MgO 보호막의 2차전자 방출계수(${\gamma}$는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류, 결정 방향성과 표면오염상태 등에 영향을 받는다. 본 연구에서는 유리 기판위에 Al 전극을 증착, 에칭후 screen printing으로 유전체를 도포, 소성 한 21inch 규격의 test panel에 MgO 보호막을 E-Beam으로 5000$\AA$ 증착한 후 MgO 보호막을 대기에 노출되는 시간간격을 변수로 하여 대기 열처리 한 MgO보호막의 2차 전자방출계수를 ${\gamma}$-FIB(Focused Ion Beam) 장치를 이용하여 측정하였다. 그리고 대기 노출 간격은 1분, 5분, 20분으로 하여 2차 전자방출계수를 측정하였고, 2차전자방출계수 측정 시 가속전압은 50V에서 200V까지 변화를 주었으며, Ne+을 사용하여 1.2$\times$10-4Torr의 진공도를 유지하며 측정하였다. 또한 각각의 MgO막의 에너지 갭을 광학적 방법을 이용하여 구하였다.

• Transactions of Materials Processing
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• v.17 no.2
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• pp.91-96
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• 2008

The governing parameters affecting the fatigue properties have been investigated experimentally in the high carbon steel wires with 0.94 wt.%C. In order to find the crucial factors, the advanced analysis techniques such as optical 3-D profiler, focused ion beam(FIB) and transmission electron microscope(TEM) were used. The two-type steel wires with different drawing strain were fabricated. The fatigue properties were measured by hunter rotating beam tester, specially designed for thin-sized steel wires. It was found that the fatigue properties of the steel wires with high drawing strain was higher than that with other wires because of low residual stress and high adhesion condition of brass coating layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.224-227
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• 1995

The micro-patterning by a Bow energy FIB whish has been conventionally utilized far mask-repairing was investigated. Amorphous Se$\_$75/Gee$\_$25/ resist irradiated by 9[keV]-defocused Ga$\^$+/ ion beam(∼10$\^$15/[ions/$\textrm{cm}^2$]) resulted in increasing the optical absorption, which was also observed also in the film exposed by an optical dose of 4.5${\times}$10$\^$20/[photons/$\textrm{cm}^2$]. The ∼0.3[eV] edge shift for ion-irradiated film was about twice to that obtained for photo-exposed. These large shift could be estimated as due to an increase in disorder from the decrease in the sloop of the Urbach tail. For Ga$\^$+/ FIB irradiation with a relatively low energy, 30[keV] and above the amount of dose of 1.4${\times}$10$\^$16/[ions/$\textrm{cm}^2$], the irradiated region in a-Se$\_$75/Ge$\_$25/ resist was perfectly etched in acid solution for 10[sec], which is relatively a short development time. A contrast was about 2.5. In spite of the relatively low incident energy,∼0.225[$\mu\textrm{m}$] pattern was clearly obtained by the irradiation of a dose 6.5${\times}$10$\^$16/[ions/$\textrm{cm}^2$] and a scan diameter 0.2[$\mu\textrm{m}$], from which excellent results were expected fur incident energies above 50[keV] which was conventionally used in FIBL.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.43-49
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• 2015

By the trends of electronic package to be smaller, thinner and more integrative, organic printed circuit board is required to be finer Cu trace pitch. This paper reports on a study of failure mechanism for PCB with fine Cu trace pitch using biased HAST. In weibull analysis of the biased HAST lifetime, it is found that the acceleration factor (AF) of between $135^{\circ}C/90%RH/3.3V$ and $130^{\circ}C/85%RH/3.3V$ is 2.079. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the failure mode. It is found that $Cu_xO/Cu(OH)_2$ colloids and Cu dendrites were formed at anode (+) and at cathode (-), respectively. Thus, this gives the evidence that Cu dendrites formed at cathode by $Cu^{2+}$ ion migration lead to a short failure between a pair of Cu nets.