• Korean Membrane Journal
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• 제7권1호
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• pp.34-41
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• 2005

The wastewater discharged from a paper plant was filtrated by 3 kinds of tubular carbon ceramic UF and MF membranes with $N_2$-backflushing. The filtration time (FT) was fixed at 8 min or 16 min, and $N_2$-backflushing time (BT) was changed in 0${\~}$60 sec. The optimal condition was discussed in the viewpoints of total permeate volume ($V_T$), dimensionless permeate flux (J/Jo) and resistance of membrane fouling ($R_f$). In the viewpoints of $V_T$, J/Jo and $R_f$, the optimal $N_2$-BT was 40 sec at both FT for M9 (MWCO: 300,000 Daltons) and C005 ($0.05{\mu}m$) membranes. However, for C010 ($0.1{\mu}m$) it was 10 sec at FT=8 min, and 20 sec at FT=16 min in the viewpoints of J/Jo and $R_f$, and 5 sec at both FT in the viewpoints of $V_T$. It means that the short $N_2$-BT could reduce the membrane fouling and recover the permeate flux sufficiently for MF membrane having a large pore size as C010. Average rejection rates of pollutants were higher than $99.0\%$ for turbidity and $22.8{\~}59.6\%$ for $COD_{cr}$, but rejection rates of total dissolved solid (TDS) were lower than $8.9\%$. Therefore, the low turbidity water purified in our system could be reused for paper process.

• 한국환경과학회지
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• 제26권5호
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• pp.601-608
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• 2017

The effects of elevated atmospheric $CO_2$ on growth and photosynthesis of soybean (Glycine max Merr.) were investigated to predict its productivity under elevated $CO_2$ levels in the future. Soybean grown for 6 weeks showed significant increase in vegetative growth, based on plant height, leaf characteristics (area, length, and width), and the SPAD-502 chlorophyll meter value (SPAD value) under elevated $CO_2$ conditions ($800{\mu}mol/mol$) compared to ambient $CO_2$ conditions ($400{\mu}mol/mol$). Under elevated $CO_2$ conditions, the photosynthetic rate (A) increased although photosystem II (PS II) photochemical activity ($F_v/F_m$) decreased. The maximum photosynthetic rate ($A_{max}$) was higher under elevated $CO_2$ conditions than under ambient $CO_2$ conditions, whereas the maximum electron transport rate ($J_{max}$) was lower under elevated $CO_2$ conditions compared to ambient $CO_2$ conditions. The optimal temperature for photosynthesis shifted significantly by approximately $3^{\circ}C$ under the elevated $CO_2$ conditions. With the increase in temperature, the photosynthetic rate increased below the optimal temperature (approximately $30^{\circ}C$) and decreased above the optimal temperature, whereas the dark respiration rate ($R_d$) increased continuously regardless of the optimal temperature. The difference in photosynthetic rate between ambient and elevated $CO_2$ conditions was greatest near the optimal temperature. These results indicate that future increases in $CO_2$ will increase productivity by increasing the photosynthetic rate, although it may cause damage to the PS II reaction center as suggested by decreases in $F_v/F_m$, in soybean.

• 대한전자공학회논문지SD
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• 제43권7호
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• pp.13-19
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• 2006

5Gb/s대역 크로스커플 구조의 트랜스임피던스 증폭기 및 제한증폭기가 연결된 광 수신기를 광 PCB에 응용하기 위해 설계 하였다. 회로는 0.18um CMOS 공정으로 구현되었다. 광 수신기는 0.5pF 광 다이오드 기생 캐퍼시턴스에서 $92.8db{\Omega}$ 임피던스 이득과 5Gbps의 주파수 대역을 갖는다. 그리고 1.8V, 2.4V 공급전압에서 9.74mV의 전력소모를 보인다. 입력단의 임피던스는 $50{\Omega}$ 이다. 회로를 광 PCB기판에 올려 광신호 송신 실험하여 5Gb/s 데이터의 수신을 확인하였다.

• 전기전자학회논문지
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• 제13권2호
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• pp.194-199
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• 2009

본 논문에서는 부분방전 시스템 응용을 위한 특 고압 80 pF (17kV AC) 마이카 커패시터를 연구하였다. 그리고 커패시터를 설계하기 위한 프로그램이 직병렬 파라미터를 추출하도록 개발되었다. 마이카는 커패시터의 유전체로 사용되었다. 30mm$\times$35mm 크키의 50$\mu$m 두께 마이카 시트가 병렬 커패시터 요소를 형성하도록 연박과 사용되었다. 20개의 마이카 시트는 커패시터의 요구에 맞추어 병렬 커패시터 요소의 직렬 스택을 형성하도록 연박으로 분리되었다. 17kV AC에 대한 제작된 80pF 커패시터의 크기는 90mm$\times$90mm이다. 제작된 커패시터에 대한 커패시턴스(C)와 손실률(D)의 고주파수 특성은 커패시턴스 메타를 사용하여 측정되었다. 제작된 커패시터는 150kHz$\sim$50MHz 주파수 범위에서 79.5pF의 커패시턴스와 0.001%의 손실률을 갖고, 65MHz에서 자기공진주파수를 가진다.

• 전기전자학회논문지
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• 제17권3호
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• pp.234-240
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• 2013

본 논문에서는 단일-극 커패시터 방식의 터치센서를 위한 incremental 델타-시그마 아날로그-디지털 변환기를 설계하였다. 델타-시그마 모듈레이터의 구조는 단일비트 2차 cascade of integrators with distributed feedback(CIFB)를 사용하였으며 $0.18-{\mu}m$ CMOS 공정을 이용하여 제작하였다. Incremental 델타-시그마 아날로그-디지털 변환기의 입력으로 이어지는 센서가 넓은 입력 범위를 얻고 높은 정확성을 가지도록 변환기 앞에 shielding 신호와 디지털적으로 조절 가능한 오프-셋 커패시터를 위치시켰다. 본회로의 공급전압은 2.6 V에서 3.7 V이며 ${\pm}10-pF$의 입력범위를 가지고 fF 이하의 해상도를 필요로 하는 단일-극 커패시터 방식의 터치센서에 적합하다.

• Journal of Electrochemical Science and Technology
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• 제3권4호
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• pp.185-189
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• 2012

A.c. impedances of mechanically polished CP-Ti specimens were measured at open-circuit potential (OCP) with immersion time and under applied anodic potentials between -0.2 and 1 $V_{Ag/AgCl}$ in 0.1 M NaOH solution. Capacitances of native oxide films ($C_{ox,na}$) grown naturally and capacitances of anodic oxide films ($C_{ox,an}$) formed under applied anodic potentials were obtained to examine the growth of native and anodic oxide films in 0.1 M NaOH solution and how to use $C_{ox,na}$ for the surface area measurement of Ti specimen. $1/C_{ox,na}$ and $1/C_{ox,an}$ appeared to be linearly proportional to OCP and applied potential ($E_{app}$), with proportional constants of 0.086 and 0.051 $uF^{-1}\;V^{-1}$, respectively. The $C_{ox,na}$ also appeared to be linearly proportional to geometric surface area of the mechanically polished CP-Ti fixture specimen, with proportional constants of 11.3 and $8.5{\mu}F\;cm^{-2}$ at -0.45 $V_{Ag/AgCl}$ and -0.25 $V_{Ag/AgCl}$ of OCPs, respectively, in 0.1 M NaOH solution. This linear relationship between $C_{ox,na}$ and surface area is suggested to be applicable for the measurement of real surface area of Ti specimen.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.92-98
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• 2015

The magnetoelectric characteristics on layered Ni-PZT-Ni, Co, Fe composites by epoxy bonding for magnetic field sensor were investigated in the low-frequency range. The ME coefficient of Ni-PZT-Ni, Ni-PZT-Co and Ni-PZT-Fe composites reaches a maximum of $200mV/cm{\cdot}Oe$ at $H_{dc}=110$ Oe, $106mV/cm{\cdot}Oe$ at $H_{dc}=90$ Oe and $87mV/cm{\cdot}Oe$ at $H_{dc}=160$ Oe, respectively. A trend of ME charateristics on Ni-PZT-Co, Ni-PZT-Fe composites was similar to that of Ni-PZT-Ni composites. The ME output voltage shows linearly proportional to ac field $H_{ac}$ and is about 0~150 mV at $H_{ac}$=0~7 Oe and f=110 Hz in the typical Ni-PZT-Ni sample. The frequency shift effect due to the load resistance $R_L$ shows that the frequency range for magnetic field sensor application can be modulated with appropriate load resistance $R_L$. This sample will allow for a low-magnetic ac field sensor in the low-frequency (near f=110 Hz).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.303-304
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• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine. ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.389-390
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• 2008

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.43-44
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• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.