• Title/Summary/Keyword: F-ToBI

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The Effect of the Heat Treatment of the ZrO2 Buffer Layer and SBT Thin Film on Interfacial Conditions and Ferroelectric Properties of the SrBi2Ta2O9/ZrO2/Si Structure (ZrO2 완충층과 SBT 박막의 열처리 과정이 SrBi2Ta2O9/ZrO2/Si 구조의 계면 상태 및 강유전 특성에 미치는 영향)

  • Oh, Young-Hun;Park, Chul-Ho;Son, Young-Guk
    • Journal of the Korean Ceramic Society
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    • v.42 no.9 s.280
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    • pp.624-630
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    • 2005
  • To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

Synthesis and Properties of 1,4-Diboracyclohexene-2 Derivatives (1,4-Dibora-2-cyclohexene 유도체들의 합성과 그 성질)

  • Uhm, Jae-Kook;Hu D.;Zenneek U.;Pritzkow H.;Siebert W.
    • Journal of the Korean Chemical Society
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    • v.34 no.5
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    • pp.490-497
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    • 1990
  • Two synthetic routes for the 1,4-diboracyclohexene-2 ring 8 have been developed. Method i) starts with 1,2-bis(dichloroaluminyl)ethane, in which the AlCl$_2$ group is replaced by BCl$_2$. Exchange of the chlorine with BI$_3$ in 1,2-bis-(dichloroboryl)ethane yields the corresponding iodo compound, which reacts with the alkynes to heterocycles 8a, b in good yield. In method ii) B$_2$Cl$_4$ is added to alkenes, replacement of chlorine with BI$_3$ yields the bis(diiodoboryl)ethane derivatives which undergo redox reactions with alkynes to give 8c, d. The diiodo derivative 8a forms the pyridine adduct 9a, and reacts with ether to give the ethoxy derivative 8f. 8a-d react with AlMe$_3$ to yield the corresponding dimethyl derivatives 8g-j, which give unstable radical anions when treated with potassium in THF. The ESR parameters are reported. In electrochemical experiments irreversible reductions of 8g-j are observed. 8g-j react with (C$_5$H$_5$)Co(C$_2$H$_4$)$_2$ to give the intermediate 16 VE complexes (C$_5$H$_5$)Co(8), in which C-H activation occurs with formation of the corresponding red 1,4-diboracyclohexadiene complexes 10. The X-ray structure analyses of 10h and 10j are reported.

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Epilayer Optimization of NPN SiGe HBT with n+ Buried Layer Compatible With Fully Depleted SOI CMOS Technology

  • Misra, Prasanna Kumar;Qureshi, S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.3
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    • pp.274-283
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    • 2014
  • In this paper, the epi layer of npn SOI HBT with n+ buried layer has been studied through Sentaurus process and device simulator. The doping value of the deposited epi layer has been varied for the npn HBT to achieve improved $f_tBV_{CEO}$ product (397 GHzV). As the $BV_{CEO}$ value is higher for low value of epi layer doping, higher supply voltage can be used to increase the $f_t$ value of the HBT. At 1.8 V $V_{CE}$, the $f_tBV_{CEO}$ product of HBT is 465.5 GHzV. Further, the film thickness of the epi layer of the SOI HBT has been scaled for better performance (426.8 GHzV $f_tBV_{CEO}$ product at 1.2 V $V_{CE}$). The addition of this HBT module to fully depleted SOI CMOS technology would provide better solution for realizing wireless circuits and systems for 60 GHz short range communication and 77 GHz automotive radar applications. This SOI HBT together with SOI CMOS has potential for future high performance SOI BiCMOS technology.

A study on Folded Monopole Antenna for Wireless HDMI Dongle Applications (무선 HDMI 동글장치를 위한 폴디드 모노폴 안테나에 관한 연구)

  • Lee, Yun-Min;Lee, Jae-Choon
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.15 no.4
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    • pp.211-215
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    • 2015
  • In this paper, we propose a internal antenna for wirless HDMI dongle device using the folded monopole structure. The proposed antenna is for 2.4GHz and 5.8GHz. The antenna optimized for parameters length, gap, width, and radius of semicircular of monopole antenna using the 'F' structure. To confirm the characteristics of the antenna parameters, HFSS from ANSYS Inc. was used for the analysis. We used an FR4 dielectric substrate with a dielectric constant of 4.4. The HDMI dongle size of the proposed antenna is $45{\times}20{\times}1mm$, and the size of the antenna area is $5{\times}20mm$. There is a value of return loss less then -10dB in 2.4GHz and 5.8GHz, band and the maximum antenna gain is -4.13dBi. The result proved the possibility of the practical using 'F' structure that came frin comparing and analyzing the measured and simulated data of the antenna.

Design of a PCB-Embedded Antenna for Bluetooth Applications (블루투스용 PCB 임베디드 안테나 설계)

  • Kim, Yun-Mi;Park, Myoung-Shil;Chyung, Ji-Young;Jung, Hae-Mi;Ahn, Bierng-Cherl
    • Journal of Korea Society of Industrial Information Systems
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    • v.11 no.5
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    • pp.98-104
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    • 2006
  • In this parer, proposed a Miniature inverted F Antenna for Bluetooth applications using folded structure and confirm it through producing and measurement. The proposed antenna as PIFA is optimized the impedance matching and the radiation pattern by positioning of feed line and short line. This antenna is designed with Microwave Studio presented CST and the optimized antenna structure is fabricated. The optimized miniature antenna size is 17.3 * 6 * 0.8 mm, the measured return loss bandwidth is 220MHz at 2.45GHz, the radiation pattern is quasi omni, and the gain is -1 dBi. these results are similar to the simulation data. It is comparatively appropriate for Bluetooth system.

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A study on the design of an Dual Inverted-F Internal Antenna for the WLAN`s Band (WLAN대역의 듀얼 역-F형 내부 안테나 설계에 관한 연구)

  • Kang, Jeong-Jin;Kang, Seo;Jeung, Seung-Il;Kim, Wan-Sik;Lee, Jong-Arc
    • Journal of IKEEE
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    • v.7 no.2 s.13
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    • pp.223-229
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    • 2003
  • In this thesis, the characteristics of an inverted-F antenna for the 2.4GHz and 5.8GHz zwirless local area network(WLAN) have been analysed in terms of the variation of design parameters. The antenna can be integrated on WLAN for notebook printed circuit board, and the characteristics in terms of the variation of the gap between feed line and shorting stub, gap between antenna's leg and ground plane, antenna leg's width, substrate's height and dielectric constant are analysed. By using these characterization plot of design parameter, the tuning techniques are proposed to design optimum antenna. The designed antenna has 170MHz, 500MHz frequency bandwidth ,VSWR is 1.6, 1.14 and 3.5dBi gain.

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Crossability and Chromosome Variation in the Early Generation of the Crosses between the Hexaploid Triticale and Diploid Rye (6배체 트리티케일 2배체 호밀과의 잡종 초기세대에서 교잡 친화성 및 염색체 변이)

  • 황종진;이홍석;하용웅
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.36 no.6
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    • pp.485-495
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    • 1991
  • This experiment was carried out to obtain the information on the crossability, variation of chromosome number in pollen mother cell (PMC) and somatic cell of the progeny from the cross between hexaploid triticale cv. Sinkihomil and two diploid rye varieties. Seed set was 39.3 to 41.6% (averaged 40.5%) in the cross between triticale (P$_1$) and rye(P$_2$), which resulted in 0.33% in F$_2$(selfed F$_1$), 2.69% in F$_1$/P$_1$ 5.47% in F$_1$/P$_2$ respectively. However, seed set was extremely low in both reciprocal crosses when triticale was used as male. Germination rate of the crossed seed was 94.0% in F$_1$ 40.8% in F$_2$(selfed F$_1$), 59.5% in F$_1$/P$_1$ and 65.9% in F$_1$/P$_2$ from the cross between triticale and rye, respectively. Pollen fertility of F$_1$ plant was averaged 18.7% in the cross between triticale and rye. Number of Uni-, Bi-, and Trivalent in PMC was 12. 6, 6.94, and 0.53, respectively, in the F$_1$ between the triticale and rye. There were 28 chromosomes in F$_1$, 21 to 34 in F$_2$, 34 to 38 in F$_1$/P$_1$ and 19 to 23 in F$_1$/P$_2$ from the cross between the triticale and rye, respectively.

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Luminescence characteristics of bismuth and europium co-doped yttrium oxide red phosphor for white light emitting diodes (Bi와 Eu이 도핑된 yttrium oxide의 white LED용 적색 형광체 발광 특성)

  • Park, W.J.;Jung, M.K.;Yoon, S.G.;Yoon, D.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.3
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    • pp.112-115
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    • 2006
  • The red emission properties of $Bi^{3+}$ co-doped $Y_2O_3:Eu^{3+}$ prepared by the solid-state reaction was investigated, in order to verify its potential to act as the red emitting phosphor of white LEDs. The emission spectrum consisted of a weak band at 581, 587, 5931 and 599 nm, with maximum sharp peaks occurring at about 611 nm due to the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$, while the excitation spectrum exhibited a broad band between 290 and 430 mm with peaks occurring in the range of $310{\sim}390nm$. Also, SEM image of the sample containing 0.43 mol% $H_3BO_3$ and 2.08 mol% $BaCl_2{\cdot}2H_2O$ phosphor particles grew to achieve diameters of $700{\sim}800nm$.

MICROTENSILE BOND STRENGTH OF SELF-ETCHING AND SELF-ADHESIVE RESIN CEMENTS TO DENTIN AND INDIRECT COMPOSITE RESIN (간접 복합레진 합착 시 자가부식형과 자가접착형 레진시멘트의 상아질에 대한 미세인장 결합강도)

  • Park, Jae-Gu;Cho, Young-Gon;Kim, Il-Sin
    • Restorative Dentistry and Endodontics
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    • v.35 no.2
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    • pp.106-115
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    • 2010
  • The purpose of this study was to evaluate the microtensile bond strength (${\mu}TBS$), failure modes and bonding interfaces of self-etching and three self-adhesive resin cements to dentin and indirect composite resin. Cylindrical composite blocks (Tescera, Bisco Inc.) were luted with resin cements (PA: Panavia F 2.0, Kuraray Medical Inc., RE: RelyX Unicem Clicker, 3M ESPE., MA: Maxem, Kerr Co., BI: BisCem, Bisco Inc.) on the prepared occlusal dentin surfaces of 20 extracted molars. After storage in distilled water for 24 h, $1.0\;mm\;{\times}\;1.0\;mm$ composite-dentin beams were prepared. ${\mu}TBS$ was tested at a cross-head speed of 0.5 mm/min. Data were analyzed with one-way ANOVA and Tukey's HSD test. Dentin sides of all fractured specimens and interfaces of resin cements-dentin or resin cements-composite were examined at FESEM (Field Emission-Scanning Electron Microscope). In conclusion, PA and RE showed higher bond strength and closer adaptation than MA and BI when indirect composite blocks were luted to dentin using a self-etching and three self-adhesive resin cements.

Antenna-Diplexer Module for Cellular/SDMB Band Using LTCC Technology (LTCC 공법을 사용한 Cellular/SDMB 안테나-다이플렉서 모듈)

  • Ha, Jeung-Uk;Chang, Ki-Hun;Yoon, Young-Joong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.7
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    • pp.774-783
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    • 2007
  • This paper presents an integrated packaging antenna-diplexer module for wireless communication systems in the Cellular and SDMB band. The design and the realization of the proposed one are experimentally analyzed and discussed. It consists of a dual-resonance antenna and a diplexer with a multi-layer LTCC(${\varepsilon}_r=7.8,\;tan\;{\delta}=0.0043$) technology with integration capability and low loss. The dual-resonance antenna of the proposed module has the meander line structure for size reduction and has the shorting structure of an inverted F antenna to achieve good impedance matching. The diplexer of the proposed module was designed with the combination of low pass filter(LPF) and high pass filter(HPF). Decreasing the mutual interference between them provides a high isolation characteristic. The proposed antenna-diplexer module with dimensions of $27.5{\times}12.0{\times}2.2mm$ operates within a range from 813 MHz to 902 MHz for the cellular band and from 2,586 MHz to 2,655 MHz for the SDMB band. And the measured gain of the fabricated module is -1.96 dBi for Cellular band and -5.43 dBi for SDMB band. The parameters for the antenna-diplexer module are investigated and the several performances are discussed.