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Frequency effect of TEOS oxide layer in dual-frequency capacitively coupled CH2F2/C4F8/O2/Ar plasma

  • Lee, J.H.;Kwon, B.S.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.284-284
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    • 2011
  • Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

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Role of CH2F2 and N-2 Flow Rates on the Etch Characteristics of Dielectric Hard-mask Layer to Extreme Ultra-violet Resist Pattern in CH2F2/N2/Ar Capacitively Coupled Plasmas

  • Kwon, B.S.;Lee, J.H.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.210-210
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    • 2011
  • The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

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Automated radiochemical synthesis of [18F]FET on TRACERlab FX2N module and its quality control

  • Dong Hyun Kim;Eun-bi Shin;Iljung Lee;Heejung Kim;Kyo Chul Lee;Kyeong Min Kim;Joo Hyun Kang;Sang Moo Lim
    • Journal of Radiopharmaceuticals and Molecular Probes
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    • v.7 no.2
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    • pp.147-152
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    • 2021
  • C-11 Radiolabeled amino acid-based radiopharmaceuticals such as [11C]MET for brain tumor PET imaging have limitations due to their short half-life (20 min). F-18 radiolabeled amino acid derivatives have been developed to overcome for the short half-life, one of which is [18F]FET. Brain tumor imaging using [18F]FET showed high uptake in tumor region and no non-specific uptake in inflammatory tissue, which was useful in discriminating the difference between inflammation and tumor especially. In this study, [18F]FET was synthesized using an automatic synthesis module and quality tests were carried out including enantiomeric purity analysis with reference compounds. Radiochemical yield was 50.3 ± 4.9% (n=7, decay-corrected) with molar activity of 76 ± 17 GBq/mmol. The radiochemical purity of >99%. Enantiomeric purity of [18F]FET using chiral HPLC analysis showed >99%, which was confirmed by co-injection with the L-FET and D-FET authentic standards. [18F]FET was prepared with high radiochemical yield and molar activity including no racemate mixture.

A Role for Arabidopsis miR399f in Salt, Drought, and ABA Signaling

  • Baek, Dongwon;Chun, Hyun Jin;Kang, Songhwa;Shin, Gilok;Park, Su Jung;Hong, Hyewon;Kim, Chanmin;Kim, Doh Hoon;Lee, Sang Yeol;Kim, Min Chul;Yun, Dae-Jin
    • Molecules and Cells
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    • v.39 no.2
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    • pp.111-118
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    • 2016
  • MiR399f plays a crucial role in maintaining phosphate homeostasis in Arabidopsis thaliana. Under phosphate starvation conditions, AtMYB2, which plays a role in plant salt and drought stress responses, directly regulates the expression of miR399f. In this study, we found that miR399f also participates in plant responses to abscisic acid (ABA), and to abiotic stresses including salt and drought. Salt and ABA treatment induced the expression of miR399f, as confirmed by histochemical analysis of promoter-GUS fusions. Transgenic Arabidopsis plants overexpressing miR399f (miR399f-OE) exhibited enhanced tolerance to salt stress and exogenous ABA, but hypersensitivity to drought. Our in silico analysis identified ABF3 and CSP41b as putative target genes of miR399f, and expression analysis revealed that mRNA levels of ABF3 and CSP41b decreased remarkably in miR399f-OE plants under salt stress and in response to treatment with ABA. Moreover, we showed that activation of stress-responsive gene expression in response to salt stress and ABA treatment was impaired in miR399f-OE plants. Thus, these results suggested that in addition to phosphate starvation signaling, miR399f might also modulates plant responses to salt, ABA, and drought, by regulating the expression of newly discovered target genes such as ABF3 and CSP41b.

Synthesis and Evaluation of $2-[^{18}F]Fluoro-A85380$, a Radioligand for ${\alpha}_4{\beta}_2$ Nicotinic Acetylcholine Receptor Imaging (${\alpha}_4{\beta}_2$ 니코틴성 아세틸콜린 수용체 영상 방사성리간드 $2-[^{18}F]fluoro-A85380$의 합성 및 평가)

  • Ryu, Eun-Kyoung;Choe, Yearn-Seong;Kim, Sang-Eun;Hwang, Sae-Hwan;Paik, Jin-Young;Choi, Yong;Lee, Kyung-Han;Kim, Byung-Tae
    • The Korean Journal of Nuclear Medicine
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    • v.36 no.4
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    • pp.261-270
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    • 2002
  • Purpose: Nicotinic acetylcholine receptors (nAChRs), which mediate excitatory neurotransmission, are known to participate in various neurophysiological functions. Severe losses of nAChRs have been noted in Alzheimer's and Parkinson's diseases. Therefore, noninvasive and quantitative imaging of nAChRs would offer a better understanding on the function of these receptors. In this study, $2-[^{18}F]fluoro-A85380\;([^{18}F]1)$, an ${\alpha}_4{\beta}_2$ nAChRs radioligand, was prepared using one HPLC purification and evaluated in mouse brain, and the results were compared with those in the literature. Materials and Methods: $[^{18}F]1$ was prepared by $[^{18}F]$fluorination of the iodo precursor followed by acidic deprotection and then purified by HPLC. Tissue distribution studies were performed in mouse brain at the indicated time points and the result was expressed as %ID/g. Inhibition studies were also carried out with pretreatment of various ligands. Results: One HPLC purification method gave the desired product in 15-20% radiochemical yield and with high specific activity ($38-55GBq/{\mu}mol$). Tissue distribution studies showed that $[^{18}F]1$ specifically labeled nAChRs in mouse brain with a high thalamus to cerebellum uptake ratio (13.8 at 90 min). Inhibition studios demonstrated selective binding of $[^{18}F]1$ to nAChRs, blocking the uptake of the $[^{18}F]1$ in nAChR-rich legions by selective ligands such as cytisine and nicotine which are well-known nAChRs agonists. Conclusion: This study demonstrated that the $[^{18}F]1$ produced by the method using one HPLC purification gave the results similar to those reported in the literature. Therefore, this synthetic method can be readily applied to the routine preparation of $[^{18}F]1$, a PET radioligand for ${\alpha}_4{\beta}_2$ nAChRs imaging.

Relationship between Critical Thinking Disposition, Clinical Decision Making and Job Satisfaction of Cancer Center Nurses (암전문병원 간호사의 비판적 사고성향, 임상 의사결정능력, 직무만족도에 관한 연구)

  • Jung, Sam-Chul;Jung, Duk-Yoo
    • Journal of Korean Academy of Nursing Administration
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    • v.17 no.4
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    • pp.443-450
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    • 2011
  • Purpose: This study was a descriptive correlation study to increase understanding of, and relationships among critical thinking disposition, clinical decision making and job satisfaction of cancer center nurses. Method: The participants in this study were 150 nurses working in one cancer center located in Gyeonggi Province. The statistic program, SPSS WIN17.0 was used for data analysis and data were analyzed using t-test, ANOVA, and Pearson correlation. Results: The critical thinking disposition of the participants showed statistically significant differences according to areas of practice (F=4.426, p=.005), and current position (F=9.346, p=.000). For clinical decision making of the participants, statistically significant differences were found according to current position (F=10.667, p=.000). Furthermore, for job satisfaction, there were statistically significant differences according to income (F=6.779, p=.002), length of career (F=2.701, p=.033) and current position (F=5.423, p=.005). There were significant positive correlations for critical thinking disposition with clinical decision making, and with job satisfaction. Conclusions: The results of the study indicate that to improve clinical decision making and job satisfaction of cancer center nurses, it is necessary to increase critical thinking disposition. To make this change, appropriate programs are needed to increase critical thinking and clinical decision making of general cancer center nurses.

Poly-Si Thin Film Solar Cells by Hot-wire CVD

  • Lee, J.C.;Chung, Y.S.;Kim, S.K.;Yoon, K.H.;Song, J.S.;Park, I.J.;Kwon, S.W.;Lim, K.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1034-1037
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    • 2003
  • Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

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Characterization of ${\mu}c$-Si:H Thin-film Solar Cells by Hot-wire CVD

  • Lee, J.C.;Chung, Y.S.;Kim, S.K.;Youn, K.H.;Song, J.S.;Park, I.J.;Kwon, S.W.;Lim, K.S.
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1598-1600
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    • 2003
  • Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

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Effect of Surfactants on Dissolution Rate of Mefenamic Acid Capsules (메페남산 캅셀의 용출에 미치는 계면활성제의 영향)

  • Jun, Young-Bin;Kim, Seung-In;Kim, Young-Il
    • Journal of Pharmaceutical Investigation
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    • v.20 no.3
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    • pp.121-127
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    • 1990
  • Mefenamic acid has been widely used clinically as an anti-inflammatory analgesic. It has poor solubility in water $(41\;{\mu}g/ml)$ and there is the difficulty of dissolution in the mefenamic acid capsules. A study was made to investigate the effect of various surfactants on the dissolution of mefenamic acid capsules. The surfactants used were sodium lauryl sulfate (SLS), Pluronic F-68, F-77, and F-127. Mefenamic acid capsule containing surfactant showed significantly improved dissolution characteristics. The dissolution rate was fast in the order of SLS > F-77 > F-68 > F-127 in mefenamic acid capsules containing 0.2 w/w % surfactant. SLS was selected for further study on the bioavailability in rabbits. The area under the plasma concentration-time curve $(AUC_{0-24})$ of mefenamic acid capsule containing SLS was higher than one of mefenamic acid capsule not containing surfactant.

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