• Economic and Environmental Geology
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• v.47 no.5
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• pp.479-488
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• 2014

Naturally occurring asbestos (NOA) from disturbance of rocks and soils has been overlooked as a source of exposure that could potentially have a detrimental impact on human health. But, few researches on mineralogical characteristics of NOA occurred in soils have been reported in Korea. Therefore, the objective of this study was to investigate the mineralogical characteristics of NOA occurred in soils at Daero-ri area, Seosan, Chungnam Province, Korea. Sedimentation method was used for particle size separation of the asbestos-containing soils. XRD and PLM analyses were used to characterize mineralogical characteristics and mineral assemblages in soils. SEM-EDS and TEM-EDS analyses were used to characterize mineral morphology and chemical composition. Particle size analyses of the asbestos-containing soils showed they were composed of 26-93% sand, 4-23% silt and 3-70% clay. Soil texture of the soils was mainly sand, sandy loam, sandy clay, and clay. PLM analyses of the soil showed that most of the soil contained asbestiform tremolite and actinolite. The average content of asbestos in the soil was 1.5 wt. %. Therefore, the soil can be classified into asbestos-contaminated soils based on U. S. Environmental Protection Agency classification (content of asbestos in contaminated soil > 1%). Morphologically different types of tremolite such as long fibrous, needle-like, fiber bundle, bladed and prismatic forms co-existed. Prismatic tremolite was dominant in sand fraction and asbestiform tremolite was dominant in silt fraction. This study indicates that the prismatic form of tremolite transform gradually into a fibrous form of tremolite due to soil weathering because tremolite asbestos was mainly existed in silt fraction rather than sand fraction.

• Korean Journal of Heritage: History & Science
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• v.53 no.4
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• pp.118-135
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• 2020

It is not uncommon in Korea to see the structure and function of a garden remain intact as well as its form. Yi Cheon-bo's Historic House (Gyeonggi-do Cultural Heritage Item No. 55), located in Sang-myeon, Gapyeong-gun, Gyeonggi-do, is considered an example of very valuable garden heritage, although its family history, location, and remaining buildings and natural cultural assets are not fully intact. Along with Yi Cheon-bo's Historic House, this study attempted to explore the possibility of restoration of the forest houses and gardens by highlighting the high value of Yi Cheon-bo's Historic House through research into the typical layout of private households in northern Gyeonggi Province and Gapyeong County, comparative review of aerial photographs from 1954, and interviews with those involved. The results of the study are as follows: In this study, the presence of Banggye-dongmun and Bansukam in the Banggyecheon area, where the location of the garden was well-preserved, was examined across the landscape of the outer garden, while the location of Yi Cheon-bo's Historic House, the appearance of feng shui, and the viewing axis were considered. Also, the appearance of the lost main house was inferred from the arrangement and shape of the Sarangchae and Haengrangchae that remain in the original garden, and the asymmetry of the Sarangchae Numaru and the hapgak shape on the side of the roof. In addition, the three tablets (Pyeonaeks) of Sanggodang (尙古堂), Bangyejeongsa (磻溪精舍), and Okgyeongsanbang (玉聲山房) were used to infer the landscape, use, and symbolism of the men's quarters. Also, a survey was conducted on the trees that existed or existed in the high prices. Incidentally, it was confirmed that information on boards and cultural properties of Yeonha-ri juniper (Gyeonggi-do Monument No. 61) was recorded to a much lesser extent than the actual required standard, and the juniper trees remaining in the front of Haengrangchae should also be re-evaluated after speculation. On the other hand, as a result of estimating the original shape as a way of pursuing completeness of the garden through restoration of the lost women's quarters and shrine, it is estimated that the main house was placed in the form of a '口' or a 'be warped 口' on the right (north) side of the men's quarters. By synthesizing these results, a restoration alternative for Yi Cheon-bo's Historic House was suggested.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.

• Journal of the korean academy of Pediatric Dentistry
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• v.26 no.1
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• pp.185-199
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• 1999

The purpose of the present study was to investigate craniofacial patterns in Korean male and female adults, and to compare morphologic differences between different facial types. In order to get configurational groupings, standardized lateral and P-A cephalograms of 174 Korean adults were measured and analyzed with seven angular, nineteen linear, four ratio, and two index measurements. Ward's minimum variance cluster analysis was employed to divide the sample into groups having similar craniofacial morphology, and thereafter, inductive statistics(t-test) was used to characterize morphologic differences of the divided groups. And also, Pearson correlation coefficients were calculated to assess correlation between the cranial dimensions and upper/lower anterior facial height(UAFH, LAFH) in each facial types for both male and female The results were as follows; 1. There existed sexual dimorphism in most of variables except SN-FH angle, palatal plane angle, facial axis angle, facial index, lower anterior facial height ratio and upper facial height ratio. 2. A brachycephalic headform ($0.84{\pm}0.05$) with leptoprosopic facial form ($0.92{\pm}0.05$) was appeared in male, and a mesocephalic headform ($0.86{\pm}0.06$) with leptoprosopic facial form ($0.92{\pm}0.04$) was exhibited in female. 3. Facial types in both male and female subjects were divided into two groups, Group A (mesoprosopic facial type) and Group B (leptoprosopic facial type). The morphologic differences between Group A and Group B were as follows: a. Cranial measurements including index, angular and linear measurements were not found to be different between Group A and Group B in both sexes. b. Increased UAFH, LAFH, and upper/lower anterior dental heights were exhibited in Group Bs of both male and female. c. In both male and female, ramus height and mandible length showed no difference between Group A and Group B. However, genial angle was found to be larger in Group B than Group A. Therefore, the morphologic differences between two groups in male and female were closely related to less favorable anatomic morphology of the mandible. 4. LAFH and UAFH showed no relationships with cranial dimensions in male and female.

• Journal of the Korea Institute of Building Construction
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• v.18 no.4
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• pp.321-327
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• 2018

Blast furnace slag has been actively used as a substitute for cement in the construction field with high value-added through resource recycling research. However, most of the slag cannot find a clear recycling purpose. This is because some slags contain unstable materials and are used for road-use asphalt and embankment, which are low value-added materials. Electric arc furnace reduction slag(ERS) has been reported to contain a large amount of unstable free CaO due to deoxidation and component adjustment. In this study, free CaO of ERS which is generated in Korean steelmakers is quantitatively evaluated by using ethylene glycol method. As a result of free CaO quantitative evaluation of ERS, it was confirmed that there is a big difference according to the location of each field. In addition, ERS generally existed in powder form as undifferentiated characteristics, but it was confirmed that free CaO content was different due to hydration product in aggregate form due to water treatment. In addition, free CaO is an amorphous material and its crystallization characteristics are different due to the influence of temperature when it is cooled. ERS requires a long-term aging period as it contains a lot of free CaO.

• Journal of Environmental Impact Assessment
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• v.16 no.1
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• pp.69-77
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• 2007

This study has been conducted to assess blackish-water phenomena in Dam reservoir. To searching for the reason, we survey physical changes in reservoir and analyze metal and organic content in particulate materials and water. The blackish-water phenomena in lake A are occurred with turbidity increases in turnover season irregularly. It was reported on 6 Jan. 2005 weakly and the water column mixed with 35~40m depth and water temperature shows $7^{\circ}C$. The turbidity of AD and AM site increased up to 20NTU. Especially, AN site shows 27NTU, such a result makes that Dam manager conclude it to blackish-water phenomena. The results of sequential extraction analysis show that over 80% of Al, Cr and Fe is existed in residual form in sediment. On the other hand, the most part of Mn shows exchangeable and carbonates form, which have a good possibility of release to water column. Mn contents in pore waters of the sediment samples are also found to be ~4 times higher than Fe contents. The metal contents in pore water of different dam sites are in order of AN (Fe: 9.98, Mn: 40.6) > AD(8.33, 37.5) > DD(1.91, 2.55). According to the results of extracted organic materials from sediment, humic substances is occupied with over 85% in total organic carbon including 23~45% of humic acid (HA) and 0.9~8.5% of fulvic acid (FA). However, HA content in pore water is not detectable while FA contents, acid-soluble humic fractions is higher than that of sediment(10~15%). which indicating that FA is a main humic components affecting water color. The color unit per DOC of FA in pore waters of different dam sites are found to be higher in lake A than lake D. From the results, it could be suggested that blackish-water phenomena of lake A are mainly arise from higher concentration of Mn and water soluble organic fractions (e.g., FA) released from sediments as well as the strength of turnover in Dam reservoir.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.