• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.166-166
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• 2006

The photoluminescence (PL) efficiency of $Ir(ppy)_{3}$:PVK is lower than $Ir(ppy)_{3}$:CBP for the whole range of doping concentration and this low PL efficiency can be a reason of the lower efficiency of PhPLED than PhOLED. The lower efficiency is originated from the large bi-excitonic quenching such as the triplet-triplet annihilation. The PhPLEDs showed very short lifetime. The short lifetime was found to be originated from the instability of the doubly reduced $Ir(ppy)_{3^{-2}}$. The double reduction takes place because of the low electron mobility of PVK and large energy difference of LUMO level between PVK and $Ir(ppy)_{3}$.

• Rapid Communication in Photoscience
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• v.2 no.1
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• pp.9-17
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• 2013

Visible light-sensitive $TiO_2$ and ZnO nanostructure materials have attracted great attention as the promising material for solar energy conversion systems such as photocatalysts for water splitting and environmental purification as well as nano-biosensors. Success of their applications relies on how to control their surface state behaviors related to the exciton dynamics and optoelectronic properties. In this paper, we briefly review some recent works on single nanoparticle photoluminescence (PL) technique and its application to observation of their surface state behaviors which are raveled by the conventional ensemble-averaged spectroscopic techniques. This review provides an opportunity to understand the temporal and spatial heterogeneities within an individual nanostructure, allowing for the potential use of single-nanoparticle approaches in studies of their photoenergy conversion and nano-scale optical biosensing.

• Current Applied Physics
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• v.18 no.12
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• pp.1564-1570
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• 2018

Charge transport dynamics in ZnO based inverted organic solar cell (IOSC) has been characterized with transient photocurrent spectroscopy and localised photocurrent mapping-atomic force microscopy. The value of maximum exciton generation rate was found to vary from $2.6{\times}10^{27}m^{-3}s^{-1}$ ($J_{sat}=79.7A\;m^{-2}$) to $2.9{\times}10^{27}m^{-3}s^{-1}$ ($J_{sat}=90.8A\;m^{-2}$) for devices with power conversion efficiency ranging from 2.03 to 2.51%. These results suggest that nanorods served as an excellent electron transporting layer that provides efficient charge transport and enhances IOSC device performance. The photovoltaic performance of OSCs with various growth times of ZnO nanorods have been analysed for a comparison between AM1.5G spectrum and local solar spectrum. The simulated PCE of all devices operating under local spectrum exhibited extensive improvement with the gain of 13.3-3.7% in which the ZnO nanorods grown at 15 min possess the highest PCE under local solar with the value of 2.82%.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.121-121
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• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.