• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.21.2-21.2
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.39-40
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• 2005

Ferroelectric Eu-substituted $Bi_4Ti_3O_{12}$ (BET) thin films with a thickness of 200 nm were deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrate by means of the liquid delivery MOCVD system and annealed at several temperatures in an oxygen atmosphere. At annealing temperature above $600^{\circ}C$, the microstructure of layered perovskite phase was observed. The remanent polarization of these films increased with increase in annealing temperature. The remanent polarization values ($2P_r$) of the BET thin films annealed at $720^{\circ}C$ were $37.71{\mu}C/cm^2$ at an applied voltage of 5 V.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.145.2-145
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• 2003

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• Journal of the Korean Chemical Society
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• v.33 no.1
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• pp.82-89
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• 1989

The fluorescence of $Eu^{3+},\;Tb^{3+}$ substituted for $La^{3+}$ in Lanthanum Oxychloride (LaOCl) has been studied. The fluorescence intensity of the $Eu^{3+},\;Tb^{3+}$ in LaOCl excited by Ultra-violet light were investigated on its activator concentration and discussed as the energy transfer process. The energy transfer from $Tb^{3+}\;to\;Eu^{3+}$ take place in the $Eu^{3+}\;and\;Tb^{3+}$ codoped LaOCl crystal. This process was confirmed to the change of concentration and the measurement of fluorescence decay time.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.193-198
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• 2004

Using the $PbO-B_2O_3-Bi_2O_3$ flux system, $(TbBi)_3(FeAIGa)_5O_{12}(TbIG)$, $(EuBi)_3(FeAIGa)_5O_{12}(EuIG)$ and $(EuTbBi)_3(FeAIGa)_5O_{12}(EuTbIG)$ films were grown on $(GdCa)_3(GaMgZr)_5O_{12}(SGGG)$ substrates by the liquid phase epitaxy (LPE). The saturation magnetization of the grown TbIG, EuIG and EuTbIG films was about 150, 950 and 125 Oe, respectively. The TbIG films resulted in the single magnetic domain while the EuIG and EuTbIG films were observed to be the multi magnetic domains by magnetic force microscope (MFM).

• Progress in Superconductivity
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• v.14 no.2
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• pp.110-115
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• 2012

Samples with nominal compositions of $RuSr_2(Eu_{1.34-x}Tb_xCe_{0.66})Cu_2O_z$ (x = 0, 0.67) were prepared and their superconductivity and magnetic properties were compared to shed light on the effect of Tb substitution for Eu. X-ray diffraction measurements indicate that the Tb substitution resulted in a decrease in both a and c lattice parameters in consistent with ionic size difference between Eu and Tb. Contrary to the Tb-free sample, no superconducting transition behavior is observed in the Tb-sustituted sample. It is also found that the Tb substitution for Eu significantly increases the weak-ferromagnetic component of the field-cooled magnetic susceptibility as well as an increase in the magnetic ordering temperature. These results suggest that the magnetic state of the Ru sublattice is significantly affected by the Tb substitution for Eu.

• Progress in Superconductivity
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• v.13 no.1
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• pp.12-17
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• 2011

We investigated the effects of Ba and Cu co-substitution on the structural and superconducting properties of ($Ru_{1-y}Cu_y$)($Sr_{1.67-x}Ba_xEu_{0.33}$)($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$ samples. X-ray diffraction(XRD) reveals that single-phase samples can be obtained in the range from x = 0.1 to 0.2 for ($Ru_{0.5}Cu_{0.5}$)($Sr_{1.67-x}Ba_xEu_{0.33}$)($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$ and from y = 0.25 to 0.5 for ($Ru_{1-y}Cu_y$)($Sr_{1.47}Ba_{0.2}Eu_{0.33}$)($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$, respectively. All samples with compositions of ($Ru_{0.5}Cu_{0.5}$)($Sr_{1.67-x}Ba_xEu_{0.33}$) ($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$ (x = 0 - 0.33) show superconducting transition behavior and the onset transition temperature decreases slightly with increasing x in consistent with the change of hole concentration estimated from room temperature thermoelectric power measurements. The XRD and resistivity measurements for the ($Ru_{1-y}Cu_y$)($Sr_{1.47}Ba_{0.2}Eu_{0.33}$)($Eu_{1.34}Ce_{0.66}$) $Cu_2O_z$ system indicate that the partial substitution of Cu for Ru is necessary to form phase pure samples, but result in a small change in transition temperature in the single-phase region from x = 0.25 to 0.5.

• Journal of the Korean Ceramic Society
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• v.45 no.3
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• pp.146-149
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• 2008

Strontium-substituted $Sr_{1-x}Ba_xAl_2O_4:Eu^{2+},\;Dy^{3+}$ compositions were prepared by the solid state synthesis method. These compositions were characterized for their phase, crystallinity and morphology using powder x-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. Photoluminescence properties were investigated by measuring excitation spectra, emission spectra and decay time for varying Ba/Sr concentrations. Photoluminescence results show higher luminescence and long decay time for $Sr_{1-x}Ba_xAl_2O_4:Eu^{2+},\;Dy^{3+}$(x=0). This is probably due to the influence of the 5d electron states of $Eu^{2+}$ in the crystal field. Long persistence was observed for these compositions due to $Dy^{3+}$ co-doping.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1279-1282
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• 2009

The luminescence properties of a potential blue-emitting $RbBaPO_4:Eu^{2+}$ phosphor substituted with various metal ions have been investigated. The main emission wavelength of the phosphor samples was red-shifted by the substitution with K and Sr ions. The maximum peak intensity was obtained from the sample $Rb_{0.25}K_{0.75}Ba_{0.99}Eu_{0.01}PO_4$ which showed 144% relative intensity versus that of BAM:$Eu^{2+}$ phosphor under 254 nm excitation.