• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.3 no.2
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• pp.152-165
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• 1993

This study was performed at eleven small-sized plating factories located in Seoul, Incheon, Ansan, and Taejeon from July 21 to October 6, 1992. The major objectives of this study were to evaluate worker exposure to hexavalent chromium and local exhaust ventilation (L.E.V.) systems at the chromium plating operations. The most suitable L.E.V. systems for chromium plating tanks were designed as examples for recommendation to the industry. The results are summarized as follows. The range of chromium plating operations investigated included decorative, hard, and black chromium plating on several kinds of parts. Most of plating tanks were not equipped with proper control methods against emission of hexavalent chromium mists and workers were not wearing appropriate personal protectives. The ariborne hexavalent chromium concentrations showed an approximate lognormal distribution. The geometric means of both personal and area samples were within the Korean and ACGIH standards, $50{\mu}g/m^3$. However, in comparison with the NIOSH criterion, $1{\mu}g/m^3$, the geometric means of personal samples at two factories and the geometric means of area samples at two factories exceeded it. The geometric means of personal and area samples of high exposure groups (above the NIOSH criterion) were 7 and 27 times higher than those of low exposure groups (below the NIOSH criterion), respectively. The L.E.V. systems of high exposure groups were improperly designed, and the factory with the highest exposure level had no L.E.V. systems at all on chemical etching process. Whereas at factories of low exposure groups, mist control methods such as mist suppressants, tank cover, and/or auxillary L.E.V. systems were added to L.E.V systems. The evaluation of L.E.V. systems showed that there was no chromium plating operation satisfying the ACGIH criteria for capture velocity, slot velocity, and exhaust rate simultaneously. To increase performance of L.E.V. systems, it must be designed to minimize the impact of boundary layer separation. Push-pull ventilation hood and downward plenum ventilation hood were suggested for the Korean industry.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.1051-1054
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• 2000

We developed the micro CSF (celebrospinal fluid) shunt valve with surface and bulk micromachining technology in polymer MEMS. This micro CSF shunt valve was formed with four micro check valves to have a membrane connected to the anchor with the four bridges. The up-down movement of the membrane made the CSF on & off and the valve characteristic such as open pressure was controlled by the thickness and shape of the bridge and the membrane. The membrane, anchor and bridge layer were made of the $O_2$ RIE (reactive ion etching) patterned Parylene thin film to be about 5~10 microns in thickness on the silicon wafer. The dimension of the rectangular nozzle is 0.2＊0.2 $\textrm{mm}^2$ and the membrane 0.45 mm in diameter. The bridge width is designed variously from 0.04 mm to 0.12 mm to control the valve characteristics. To protect the membrane and bridge in the CSF flow, we developed the packaging system for the CSF micro shunt valve with the deep RIE of the silicon wafer. Using this package, we can control the gap size between the membrane and the nozzle, and protect the bridge not to be broken in the flow. The total dimension of the assembled system is 2.5＊2.5 $\textrm{mm}^2$ in square, 0.8 mm in height. We could precisely control the burst pressure and low rate of the valve varing the design parameters, and develop the whole CSF shunt system using this polymer MEMS fabricated CSF shunt valve.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.335-340
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• 2013

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.503-508
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• 1999

We have investigated the physical and diffusion barrier property of Ti-Si-N film for Cu metallization. The ternary compound was deposited by using reactive rf magnetron sputtering of a TiSi$_2$target in an Ar/$N_2$gas mixture. Resistivities of the films were in range of 358$\mu$$\Omega$-cm, to 307941$\mu$$\Omega$-cm, and tended to increase with increasing the $N_2$/Ar flow rate ratio. The crystallization of the Ti-Si-N compound started to occur at 100$0^{\circ}C$ with the phases of TiN and Si$_3$N$_4$identified by using XRD(X-ray Diffractometer). The degree of the crystallization was influenced by the $N_2$/Ar flow ratio. The diffusion barrier property of Ti-Si-N film for Cu metallization was determined by AES, XRD and etch pit by secco etching, revealing the failure temperature of 90$0^{\circ}C$ in 43~45at% of nitrogen content. In addition, the very thin compound (10nm) with 43~45at% nitrogen content remained stable up to $700^{\circ}C$. Furthermore, thermal treatment in vacuum at $600^{\circ}C$ improved the barrier property of the Ti-Si-N film deposited at the $N_2$(Ar+$N_2$) ratio of 0.05. The addition of Ti interlayer between Ti-Si-N films caused the drastic decrease of the resistivity with slight degradation of diffusion barrier properties of the compound.

• Korean Chemical Engineering Research
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• v.54 no.4
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• pp.459-464
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• 2016

In this study, the electrochemical characteristics of porous silicon/carbon composite anode were investigated to improve the cycle stability and rate performance in lithium ion batteries. In this study, the effect of TEOS and $NH_3$ concentration, mixing speed and temperature on particle size of nano silica was investigated using $St{\ddot{o}}ber$ method. Nano porous Si/C composites were prepared by the fabrication processes including the synthesis of nano $SiO_2$, magnesiothermic reduction of nano $SiO_2$ to obtain nano porous Si by HCl etching, and carbonization of phenolic resin. Also the electrochemical performances of nano porous Si/C composites as the anode were performed by constant current charge/discharge test, cyclic voltammetry and impedance tests in the electrolyte of $LiPF_6$ dissolved inorganic solvents (EC:DMC:EMC=1:1:1vol%). It is found that the coin cell using nano porous Si/C composite has the capacity of 2,006 mAh/g and the capacity retention ratio was 55.4% after 40 cycle.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.863-866
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• 1999

(Ba,Sr)$TiO_3$ thin films have attracted groat interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2$/Ar plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage = 600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2, the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is 480$\AA/min$ at 10 % $BCl_3$ adding to $Cl_2$/Ar. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density measured by OES as a function of $BCl_3$ percentage in $Cl_2$/Ar. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2$/Ar. To study on the surface reaction of (Ba,Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion enhancement etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and Tic14 is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about $65\;{\sim}\;70$.

• Membrane Journal
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• v.28 no.3
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• pp.169-179
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• 2018

The purposes of this paper were to improve both fouling and chlorine resistance by increasing the hydrophilicity of the reverse osmosis membrane. In order to improve chlorine resistance, the surface of RO membrane was activated by ultraviolet irradiation, and then it was modified by the sol-gel method using Octyltriethoxysilane (OcTES) such as the silane coupling agent to low sensitivity to chlorine, thereby the polyamide active layer was protected and chlorine resistance was improved. In addition, polyglycerol polyglycidyl ether (PGPE) and sorbitol polyglycidyl ether (SPE) coating with different number of epoxides, ring opening reaction of epoxide improved the anti-fouling resistance. The surface modification condition was optimized by FT-IR, XPS, and contact angle analysis. As a result, the permeability reduction rate of the silane-epoxy modified membrane after the fouling test was decreased about 1.5 times as compared with that of the commercial membrane. And the salt rejection was maintained over 90% at $20,000ppm{\times}hr$ even after chlorine resistance test.

• Journal of Sensor Science and Technology
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• v.22 no.2
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• pp.130-135
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• 2013

This study proposed a noble process to fabricate TSV (Through Silicon Via) structure which has lower cost, shorter production time, and more simple fabrication process than plating method. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process. The via hole was $100{\mu}m$ in diameter and $400{\mu}m$ in depth. A dielectric layer of $SiO_2$ was formed by thermal oxidation on the front side wafer and via hole side wall. An adhesion layer of Ti and a seed layer of Au were deposited. Soldering process was applied to fill the via holes with solder paste and metal powder. When the solder paste was used as via hole metal line, sintering state and electrical properties were excellent. However, electrical connection was poor due to occurrence of many voids. In the case of metal powder, voids were reduced but sintering state and electrical properties were bad. We tried the via hole filling process by using mixing solder paste and metal powder. As a consequence, it was confirmed that mixing rate of solder paste (4) : metal powder (3) was excellent electrical characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.159-162
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• 2002

Ferroelectric $YMnO_{3}$ thin films were etched with $Ar/Cl_{2}$ and $CF_{4}/Cl_{2}$ inductivly coupled plasma (ICP). The maximum etch rate of $YMnO_{3}$ thin film was $300{\AA}/min$ at a $Ar/Cl_{2}$ gas mixing ratio of 2/8, a RF power of 800 W, a dc bias of 200 V, a chamber pressure of 15 mTorr, and a substrate temperature of ${30^{\circ}C}$. From the X-ray photoelectron spectroscopy (XPS) analysis ， yttrium not only etched by chemical reactions with Cl radicals, but also assisted by Ar ion bombardments in $Ar/Cl_{2}$ plasma. In $CF_{4}/Cl_{2}$ plasma, yttrium are remained on the etched surface of $YMnO_{3}$ and formed of nonvolatile YFx compounds Manganese etched effectively by chemical reactions with Cl and F radicals. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the $YMnO_{3}$ thin film etched in $Ar/Cl_{2}$ plasma shows lower value than that in $CF_{4}/Cl_{2}$ plasma. It is indicates that the crystallinty of $YMnO_{3}$ thin film is more easily damaged by the Ar ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.

• 한국문화재보존과학회:학술대회논문집
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• 2004.10a
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• pp.43-54
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• 2004

In the course of examining the metallic structure of Iron chisel and Iron arrowhead, a relics of the 16th or 17th of Chosun Dynasty unearthed at near Gangsun-tower, Chengpyeong temple, we collected un-eroded samples from the relics and looked into the metallic structure through mounting, grinding and polishing, and etching, while analyzing non-metallic inclusion via SEM and EDS. The research metallic structure and SEM-SDS analysis, found that Iron chisel and Iron arrowhead had been produced from sponge iron close to pure Iron made by solid low heat reducing and then increased in rate of carbon by carburizing, It also found that Iron chisel had been hardened through the repetitive process of quench hardening and heat treatment, after being increased in amount of carbon to a certain level. Up to now, there have been a number of studies in the domestic academia which were made primarily of the structure of metallic relics of three countries the period or tile era before that. Although this research was limited in type and number of the relics, it turned out to be Interesting in that it revealed the 16thor 17th century way of processing iron, even in fragments. It is thought to be fruitful that we found iron had been made even in the Chosun Dynasty from sponge iron. It is recommended that researches be made on the relics later to be excavated and originally made in $Kory\breve{o}$ or Chosun Dynasty, because they are important in history of metal technology.