• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.16-22
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• 1993

A via-hole process for reproducible and reliable GaAs MMIC fabrication is described. The via-hole etching process consists of two step dry etching. During the first etching step a BC $I_{3}$/C $I_{2}$/Ar gas mixure is used to achieve high etch rate and small lateral etching. In the second etching step. CC $L_{2}$ $F_{2}$ gas is used to achieve selective etching of the GaAs substrate with respect to the front side metal layer. Via holes are formed from the backside of a 100$\mu$m thick GaAs substrate that has been evaporated initially with 500.angs. thick chromium and subsequently a 2000.angs. thick gold layer. The fabricated via holes are electroplated with gold (~20$\mu$m thick) to form via connections. The results show that established via-hole process is satisfactory for GaAs MMIC fabrication.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.725-730
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• 1996

The key process in silicon surface micromachining is the selective etching of a sacrificial layer to release the silicon microstructure. The newly developed anhydrous HF/$CH_3$OH gas phase etching of TEOS (teraethylorthosilicate) sacrificial layers onto the polysilicon and the nitride substrates was employed to release the polysilicon microstructures. A residual product after TEOS etching onto the nitride substrate was observed on the surface, since a SiOxNy layer is formed on the TEOS/nitride interface. The polysilicon microstructures are stuck to the underlying substrate because SiOxNy layer does not vaporize. We found that the only sacrificial etching without any residual product and stiction is TEOS etching onto the polysilicon substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.592-592
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• 2012

태양전지에서 고효율 달성을 위해 태양광을 더 많이 활용하기 위해서는 태양전지 표면에서의 광 반사를 줄여야 하는데 가장 효과적인 방법은 실리콘 기판의 wet etching 공정을 통한 텍스쳐링이다. 태양전지에서 가장 많이 사용되는 파장대역은 가시광선 영역인데 555 nm 파장에서 실리콘 표면의 total reflectance는 30.1%로 매우 높고 diffuse reflectance는 0.1%로서 무시할만큼 적다. 하지만 wet etching을 한 후 total reflectance는 18%까지 감소하였고, diffuse reflectance는 16%까지 증가하였다. 결정면에 따른 식각선택성을 이용하는 이방성 etching으로 V groove 모양의 표면형상을 얻을 수 있었고, 후속 등방성 etching을 하여 U groove 표면형상을 얻을 수 있었다. 또한 wet etching의 문제점중의 하나는 반응중에 생성되는 수소기체가 실리콘 표면에 부착되어 etching이 불균일하게 진행되는 것인데 초음파를 사용하여 이 문제를 해결하였다. 그리고 Etchant의 성분용액중 하나인 IPA의 농도조절을 통해 표면에 형성되는 피라미드의 크기를 조절할 수 있었다. 본 연구에서는 실리콘 표면형상의 각각 서로 다른 크기와 모양에 따라 태양전지를 만들었을 때 빛의 활용 측면에서 어떤 변화가 있고 얼마만큼의 효율변화가 있는지에 대해서도 알아보았다.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.77-78
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• 2000

We verified the charged static electricity on LCD glass influences upon the etching uniformity of dry etching process by plasma. In the TFT-LCD manufacturing process, we mainly paid attention to eliminate the static electricity for TFT reliability. The static electricity caused the serious ununiformity of etching surface profile and etching rate in the dry etch process. Through our experiment on the made static electricity from -200V to -1000V, it was confirmed that the static electricity on LCD glass caused the etching rate variation of $1.5%{\sim}15%$. We recommend the etching process equipment for LCD manufacturing have to establish the soft X-ray exposure module system for eliminating the static electricity inside the loading and unloading chamber.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1504-1507
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• 2009

In this paper, the etching behavior of ZnO in $CF_4$ plasma mixed Ar was investigated. Previously, the etch rate in $CF_4$/Ar plasma was reported that it is slower than that in Cl containing plasma. But, plasma included Cl atom can produce the by-product such as $ZnCl_2$. In order to solve this film contamination, no Cl containing etching gas is required. We controlled the etching parameter such as source power, substrate bias power, and $CF_4$/Ar gas ratio to acquire the fast etch rate using a ICP etcher. We accomplished the etching rate of 144.85 nm/min with the substrate bias power of 200W. As the energetic fluorine atoms were bonded with Zinc atoms, the fluoride zinc crystal ($ZnF_2$) was observed by X-ray photoelectron spectroscopy (XPS).

• Fashion & Textile Research Journal
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• v.3 no.4
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• pp.344-350
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• 2001

Wool fabrics were treated with dichloro isocyanuric acid (DCCA) and dyed with acid dyes (C.I. Acid Red 18), and then, they were treated by sputter etching. Wool fabrics had been sputtered with aluminium under various conditions such as sputter etching time and discharge power in the presence of argon gas. We compared mechanical properties, colour difference and fastness properties of these samples one another: Mechanical properties and colour difference of sputtered wool fabrics changed by sputter etching time, discharge power and DCCA concentration. Light fastness showed a rising tendency but rubbing fastness showed a downward tendency when sputter etching time was 7 minutes.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.82-89
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• 2000

In lithium silicate photosensitive glass-ceramics, the relationship between lithography time and crystallization, and the effect of addition of mineral acid in etching rate and pattern shape were investigated. Irradiation times for micropatterning were less than 5 minutes in which Ce3+ ions in glass were changed rapidly to Ce4+ with ultra violet light. Overexposure to ultra brought about blot of pattern by diffiraction of light. Addition of mineral acid to HF enhanced etching rate as compared with HF solution only. The addition of H2SO4 especially increased the etching rate by 70%. But the mixed solution also increased the etching rate of the noncrystallized portion of the glass and this resulted in heavy etching. Etching with ultrasonic wave showed higher etching rate than that with the static or fluid method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.416-417
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• 2005

In this study, we optimized the process of Si anisotropy etching by combing tetramethyl ammonium hydroxide (TMAH) etching process with ultrasonic wave technology. New ultrasonic TMAH etching apparatus was developed and it was used for fabricating a $20{\mu}m$ thick diaphragm for Si piezoresistive pressure sensors. Based on comparison study on etch rate and surface flatness, it was observed that the Si anisotropy etching methode with new ultrasonic TMAH etching apparatus (at 40 kHz/ 500 watt) was superior to conventional etching methods with TMAH or TMAH+ammonium persulfate(AP) solutions.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.222-225
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• 2008

We proposed the dry etching process recipe for the fabrication of In-Ga-Zn-O (IGZO)-based oxide TFTs, in which the etching behaviors of IGZO films were systematically investigated when the etching gas mixtures and their mixing ratios were varied. Good device characteristics of the fabricated TFT were successfully confirmed.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1252-1254
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• 2005

Recently, PDP barrier ribs require the formation of complex structure so that they are usually formed by etching method. For producing the fine ribs structure, during the etching process the metal ions of matrix (glass) of barrier materials should be understood on the etching mechanism with etching condition. We analyzed the quantity of Pb, Si, and B ions from the etch solution as a function of etching time.