한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.222-225
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- 2008
Dry Etching Process for the Fabrication of Transparent InGaZnO TFTs
- Yoon, S.M. (ETRI) ;
- Cheong, W.S. (ETRI) ;
- Hwang, C.S. (ETRI) ;
- Kopark, S.H. (ETRI) ;
- Cho, D.H. (ETRI) ;
- Shin, J.H. (ETRI) ;
- Ryu, M. (ETRI) ;
- Byun, C.W. (ETRI) ;
- Yang, S. (ETRI) ;
- Lee, J.I. (ETRI) ;
- Chung, S.M. (ETRI) ;
- Chu, H.Y. (ETRI) ;
- Cho, K.I. (ETRI)
- Published : 2008.10.13
Abstract
We proposed the dry etching process recipe for the fabrication of In-Ga-Zn-O (IGZO)-based oxide TFTs, in which the etching behaviors of IGZO films were systematically investigated when the etching gas mixtures and their mixing ratios were varied. Good device characteristics of the fabricated TFT were successfully confirmed.