• The korean journal of orthodontics
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• v.33 no.6 s.101
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• pp.437-451
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• 2003

The purpose of this study was to measure maximum bite force and to investigate its relationship with anteroposterior, vertical, and transverse facial skeletal measurements. From among the dental students at the College of Dentistry, forty subjects (26 male and 14 female) were selected. With two sets of strain gauge, maximum bite force at the right and left first molars and anterior teeth was measured in the morning and afternoon. After taking lateral and posteroanterior cephalograms, fifty and nineteen variables were evaluated, respectively Paired t-tests and an independent t-test were done and correlation coefficients were obtained. 1. The maximum bite force at the first molars was $68.0\pm13.9kg$. in males and $55.6\pm10.5kg$ in females (p<0.05) while the force at the anterior teeth was $8.4\pm4.9kg\;and\;1.1\pm3.4kg$ respectively (p<0.05). 2. Some tendency for a greater value of maximum bite force at the preferred side was observed but not statistically significant (p>0.05). 3. Significant difference was observed between the strong bite force group and the weak bite force group in some cephalometric and other measurements (p<0.05). N-S-Ar, S-Ar-Go, FH-Hl, IMPA and MMO showed a significant difference in posterior maximum bite force (P). N-S-Ar and FH-H1 also showed a significant difference in anterior maximum bite force (A). 4. Several cephalometric variables showed some correlation with maximum bite force (p<0.05). N-S-Ar, S-Ar-Go, UGA, FH-H6, FH-H1, body weight and MMO were significantly correlated with posterior maximum bite force (P). Go-Me, P-1 and IMPA were significantly correlated with anterior maximum bite force (A).

• The korean journal of orthodontics
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• v.34 no.4 s.105
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• pp.303-312
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• 2004

An unfavorable tipping movement can occur during the retraction of anterior teeth because orthodontic force is loaded by brackets positioned far from the center of resistance. To avoid this unfavorable movement, a compensating curved wire or lingual root torque wire is used. The purpose of this study is to investigate, using photoelastic material, the distribution of initial stress associated with the retraction of the incisors according to the degree of the compensating curve, to model changes associated with tooth ud alveolar bone structure. The following results were obtained by analysis of the polarizing plate of the effects of initial stress resulting from retraction of the anterior teeth: 1. When the incisors were retracted using combination archwire or sliding mechanics, the maximal polarizing pattern of the apical area decreased as the degree of the compensating owe increased from 0 to 15 to 30. 2. When the incisors were retracted by the combination archwire or sliding mechanics, the maximal polarizing pattern of the canine and premolar area increased as the degree of the compensating curve increased from 0to 15to 30. 3. A lower degree of polarizing patterns were associated with the combination archwire technique than the sliding mechanics technique at a given force. The above results indicate that there is no significant difference between the combination loop archwire technique and sliding mechanics, for the retraction of maxillary anterior teeth with decreased lingual tipping tendency by a compensating curve on the arch wire. However, the use of sliding mechanics is more effective for the prevention of lingual inclination of the anterior teeth, because the hook used in sliding mechanics is closer to the center of resistance of the maxillary anterior teeth.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.482-488
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• 2012

To fabricate a precise micro metal mold, the electrochemical etching process has been researched. We investigated the electrochemical etching process numerically and experimentally to determine the etching tendency of the process, focusing on the current density, which is a major parameter of the process. The finite element method, a kind of numerical analysis, was used to determine the current density distribution on the workpiece. Stainless steel(SS304) substrate with various sized square and circular array patterns as an anode and copper(Cu) plate as a cathode were used for the electrochemical experiments. A mixture of $H_2SO_4$, $H_3PO_4$, and DIW was used as an electrolyte. In this paper, comparison of the results from the experiment and the numerical simulation is presented, including the current density distribution and line profile from the simulation, and the etching profile and surface morphology from the experiment. Etching profile and surface morphology were characterized using a 3D-profiler and FE-SEM measurement. From a comparison of the data, it was confirmed that the current density distribution and the line profile of the simulation were similar to the surface morphology and the etching profile of the experiment, respectively. The current density is more concentrated at the vertex of the square pattern and circumference of the circular pattern. And, the depth of the etched area is proportional to the current density.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.287-292
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• 1997

This study was tried to form the silica waveguide using high density plasma. Plasma characteristics have been investigated as a function of etch parameters using a single Langmuir probe and optical emission spectroscopy(OES). As etch parameters, $CF_4/CHF_3$ ratio, bias power, and source power were chosen as main variables. The oxide etch characteristics of inductively coupled plasma(ICP) dry etcher such as the etch rate, etch profile, and surface roughness were investigated s a function of etch parameters. On the basis of these results, the core pattern of the wave guide composed of $SiO_2-P_2O_5$ was formed. It was confirmed that the etch rate of $SiO_2-P_2O_5$ core layer was 380 nm/min and the aluminum selectivity to oxide, that is, mask layer was approximately 30:1. The SEM images showed vertical etched profiles and minimal loss of pattern width.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.74-77
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• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.871-875
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• 1998

High aspect ratio microstructures were fabricated by photolithography. The material for the microstructure was photosensitive glass which has good mechanical and electrical insulation properties. The photosensitive glass was exposed to ultraviolet light at 312nm through a chromium mask in which the structures are drawn. After heat treatment process over $500^{\circ}C$, the photosensitive glass was etched in a 10% hydrofluoric acid solution with ultrasonic conditions. Final dimension of the micro-framework was greatly dependent on the thickness of photosensitive glass, mask pattern, ultraviolet light exposure and etching conditions. The maximum aspect ratio of the micro-framework obtained from this work was over 30.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI mm Was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was $8300{\AA}/min$ and vertical profile was approximately acquired $90^{\circ}$ at $CF_{4}/(CF_{4}+O_{2})$ of 0.2. The selectivies of polyimide to PR and $SiO_{2}$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of $O_{2}/CF_{4}$ were investigated by optical emission spectrometer (OES).

• Journal of Sensor Science and Technology
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• v.26 no.5
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• pp.366-369
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• 2017

This work presents a detailed study of several parameters on the spray coating method for fabricating a flexible cantilever. Conventionally, spin coating method have been widely used in the microelectromechanical system (MEMS) fabrication process. However, the major drawback of this method is the difficulties in protecting various topography with photoresist film, particularly when the device is manufactured in high aspect ratio. It is also a challenging process to form a small pattern in the etched area. On the other hand, the commercial spray coating systems are not advantageous from an economic perspective and the technique is also providing less efficient. In order to solve these issues, we have developed a manual spray coating system which can be efficiently used by combining the accessories available in the laboratory. The developed spray coating system consists of a spin-coater, motorized stage, a spray gun with the capable of controlling centrifugal force, injection amount, injection angle, and spray range. The major advantage of the proposed spray coating system is its reasonable fabrication cost. Secondly, the system can be easily disassembled after finishing the coating experiment. Owing to the mentioned advantages, we sincerely believe that the proposed spray coating system can be effectively used in many related applications.

• Journal of the Optical Society of Korea
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• v.15 no.2
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• pp.182-186
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• 2011

A poling method using multiple negative voltage was introduced to fabricate periodically poled lithium niobate (PPLN) devices with quasi-phase matching (QPM) period of $12.9\;{\mu}m$ by utilizing an real-time visualization system. We also performed variation of the electric field during the poling. Two different conventionally used poling method, negative and positive single pulses, were used and the poling quality compared through microscopic images and far-field diffraction pattern analysis. Etched images on the +z and -z surfaces of PPLN showed that negative multiple pulse poling presented the highest periodicity in domain structures among the three methods. Duty ratio and its standard deviation were measured by analyzing far-field diffraction patterns. The newly introduced method of negative multiple pulse poling had duty ratio of 0.42 which was close to the ideal value of 0.50 and standard deviation of 0.020 that was about 3 times smaller than that of the other conventional methods.