• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.122-132
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• 1998

Characteristics of inductively coupled Cl2/O2 and Cl2/N2 plasmas and their effects on the formation of submicron deep trench etching of single crystal silicon have been investigated using Langmuir probe, quadrupole mass spectrometer (QMS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM), Also, when silicon is etched with oxygen added chlorine plasmas, etch products recombined with oxygen such as SiClxOy emerged and Si-O bondings were found on the etched silicon surface. However, when nitrogen is added to chlorine, no etch products recombined with nitrogen nor Si-N bondings were found on the etched silicon surface. When deep silicon trenches were teached, the characteristics of Cl2/O2 and Cl2/N2 plasmas changed the thickness of the sidewall residue (passivation layer) and the etch profile. Vertical deep submicron trench profiles having the aspect ratio higher than 5 could be obtained by controlling the thickness of the residue formed on the trench sidewall using Cl2(O2/N2) plasmas.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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• pp.96-98
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• 2006

A new ex-situ model to diagnose a plasma processing equipment was presented. The model was constructed by combining wavelet, scanning electron microscope, ex-situ measurement of etching profile, and neural network. The diagnosis technique was applied to a tungsten etching process, conducted in a $SF_6$ helicon plasma. The wavelet was used to characterize detailed variations of plasma-etched surface. The diagnosis model was constructed with the vertical wavelet component. For comparison, a conventional model was built by using the estimated profile data. Compared to the conventional model, the wavelet-based model, demonstrated a much improved diagnosis.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.240-245
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• 1996

Non-ozone layer destructive Chlorofluorocarbon(CFC) altematives(CHCIF$_{2}$ and $C_{2}$H$_{2}$F$_{4}$) have been initially used for laser-induced thenrmochemical etching of GaAs. High etching rate up to 188.mu.m/sec and an aspect ratio of 2.7 have been achieved by a single scan of laser beam, respectively. The etching rate at constant ambient gas pressure was found to saturate for beam power. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron microscopy(AES). Etched profile, depth and width were observed by scanning electron microscope(SEM).

• 대한전자공학회논문지
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• 제22권4호
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• pp.84-91
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• 1985

열적으로 성장된 이산화실리콘 층 위에 실리카 필름 박막을 도포함으로써, 열산화막의 예각부식 공정이 제안되었다. 실리카필름의 밀화온도를 175$^{\circ}C$ 에서 1,150$^{\circ}C$로 변화시킴에 따라, $3^{\circ}$ 에서 $40^{\circ}$사이의 경사각을 얻었다. 또한 예각부식 공정의 해석적인 모형이 제시되었으며, 이산화실리콘 층의 부식단면을 기술하는 방정식이 Fermat의 최단시간 정리를 이용하여 유도되었다. 전자주사 현미경으로 부터 얻어진 부식단면과 이론적으로 계산된 단면을 비교한 결과, 서로 잘 부합되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.118-119
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• 2009

This paper presents the feature profile evolution silicon deep trench etching, which is very crucial for the commercial wafer process application. The silicon deep trenches were etched with the SF6 gas & Hbr gas based process recipe. The optimized silicon deep trench process resulted in vertical profiles (87o~90o) with loading effect of < 1%. The process recipes were developed for the silicon deep trench etching applications. This scheme provides vertically profiles without notching of top corner was observed. In this study, the production of SF6 gas based silicon deep trench etch process much more strongly than expected on the basis of Hbr gas trench process that have been investigated by scanning electron microscope (SEM). Based on the test results, it is concluded that the silicon deep trench etching shows the sufficient profile for practical MOS FET silicon deep trench technology process.

• 한국표면공학회지
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• 제27권3호
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• pp.158-165
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• 1994

Cu-Cr alloy thin film requires good quality of etching be used for TAB technology. The etched cross sec-tion was clean enough when the etching was performed in 0.1M $FeCl_3$ solution at $50^{\circ}C$. The etching rate was increased with the amount of $KMnO_4$. For enhanced profile of cross section and rate, the spray etchning was found to be superior compared to the immersion etching. A series of experiments were performed to improve the uniformity of the current distribution in electrodeposition onto the substrate with lithographic patterns. Copper was electrodeposited from quiescent-solution, paddle-agitated-solution, and air-bubbled-solution to in-vestigate the effect of the fluid flow. The thickness profile of the specimen measured by profilmetry has the non uniformity at feature scale in quiescent-solution, because of the longitudinal vortex roll caused by the natural convection. However, uniform thickness profile was achieved in paddle-agitated or air bubbled solu-tion.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.245-247
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• 2002

The paper represents the effects of the drive-in process parameters on the residual stress profile of the p+ silicon film. For the quantitative determination of the residual stress profiles, the test samples are doped via the fixed boron diffusion process and four types of the thermal oxidation processes and consecutively etched by the improved process. The residual stress measurement structures with the different thickness are simultaneously fabricated on the same silicon wafer. Since the residual stress profile is not uniform along the direction normal to the surface, the residual stress is assumed to be a polynomial function of the depth. All of the coefficients of the polynomial are determined from the deflections of cantilevers and the displacement of a rotating beam structure. As the drive-in temperature or the drive-in time increases, the boron concentration decreases and the magnitude of the average residual tensile stress decreases. Also, near the surface of the p+ film the residual tensile stress is transformed into the residual compressive stress and its magnitude increases.

• Korean Chemical Engineering Research
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• 제51권6호
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• pp.755-759
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• 2013

Bosch 공정의 식각 단계에서 Ar을 첨가하였을 때 Si의 식각특성을 관찰하기 위하여 식각 단계에서 $SF_6$ 플라즈마만 사용한 경우와 Ar 유속비율이 20%인 $SF_6$/Ar 플라즈마를 각각 사용하여 Si을 Bosch 공정으로 식각하였다. Bosch 공정의 식각 단계에서 $SF_6$ 플라즈마에 Ar 가스를 첨가하면 $Ar^+$ 이온에 의한 이온포격이 증가하였고 이는 Si 입자의 스퍼터링을 초래할 뿐 아니라 F 라디칼과 Si의 화학반응을 가속하였다. 그 결과 식각 단계에서 20%의 Ar이 첨가되어 Bosch 공정으로 수행된 Si의 식각속도는 Ar이 첨가되지 않은 경우보다 10% 이상 빨라졌고 식각프로파일도 더욱 비등방적이었다. 이 연구의 결과는 Bosch 공정으로 Si을 식각할 때 식각속도와 식각프로파일의 비등방성을 개선하는데 필요한 기초자료로 사용될 수 있을 것으로 판단된다.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.21-24
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• 2000

Ferroelectric YMnO$_3$thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$thin films is 285 $\AA$/min under Cl$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$over CeO$_2$and $Y_2$O$_3$are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$film is approximately 65$^{\circ}$and free of residues at the sidewall.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.996-1002
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• 2000

Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).