Laser-induced etching of GaAs with CFC alternatives

CFC 대체물질을 이용한 GaAs의 레이저 유도 에칭

Non-ozone layer destructive Chlorofluorocarbon(CFC) altematives(CHCIF$_{2}$ and $C_{2}$H$_{2}$F$_{4}$) have been initially used for laser-induced thenrmochemical etching of GaAs. High etching rate up to 188.mu.m/sec and an aspect ratio of 2.7 have been achieved by a single scan of laser beam, respectively. The etching rate at constant ambient gas pressure was found to saturate for beam power. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron microscopy(AES). Etched profile, depth and width were observed by scanning electron microscope(SEM).