• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.154-157
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• 2004

With the need of high-speed and mass data transmission, optical communication system requires the growth of optical components. Waveguide photodiodes(WGPDs) are introduced and circuit models of WGPD and submodule are required for the optical receiver application. In this paper, the circuit models of WGPD and submodule are investigated and modeling results are derived by PEEC methodology. The s-parameters are measured for the test structures of WGPD and submodule and the equivalent circuit models are examined. The modeling results agreed well with the measured data and can present a reasonable physical representation.

• 한국음향학회지
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• 제28권4호
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• pp.363-369
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• 2009

본 논문에서는 인접된 다중모드 공진점을 갖는 수중 음향 압전 트랜스듀서의 전기적 등가회로 모델을 추정하는 방법을 제안하였다. 트랜스듀서의 실측된 임피던스와 추정된 등가모델의 임피던스 오차가 최소가 되도록 공진모드간 결합 영향을 고려한 적합도 함수를 제안하고, 미립자 집단 최적화 (PSO:Particle Swarm Optimization) 알고리즘을 이용하여 등가회로의 미지상수를 추정하였다. 3개의 공진점을 갖는 샌드위치형 예제 트랜스듀서에 대하여 제안된 방법을 적용하여 등가회로를 모델링하고, 수중에서의 임피던스 측정치와 추정된 등가모델의 임피던스를 비교함으로써 제안된 기법의 타당성을 검증하였다.

• 한국정보통신학회논문지
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• 제7권4호
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• pp.743-749
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• 2003

본 논문에서는, cold-HEMT의 게이트에 핀치오프 전압보다 약간 낮은 전압을 가함으로써 게이트 손상문제로부터 자유로우며 부가적인 DC 측정을 필요로 하지 않는 새로운 HEMT 소신호 모델링 방법을 제시한다. 제시된 방법에 의해서 모델링된 회로의 S-파라미터 이론치는 49개의 동작 바이어스점에서 측정치와 62GHz까지 뛰어난 일치를 보였다.

• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.1138-1143
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• 2015

Effects of fabrication process variations on impedance of microelectrodes integrated on a neural probe were examined through equivalent circuit modeling and SPICE simulation. Process variation and the corresponding range were estimated based on experimental data. The modeling results illustrate that the process variation induced by metal etching process was the dominant factor in impedance variation. We also demonstrate that the effect of process variation is frequency dependent. Another process variation that was examined in this work was the thickness variation induced by deposition process. The modeling results indicate that the effect of thickness variation on impedance is negligible. This work provides a means to predict the variations in impedance values of microelectrodes on neural probe due to different process variations.

• Journal of Electrical Engineering and Technology
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• 제13권3호
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• pp.1147-1155
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• 2018

This paper presents an improved method to determine the internal parameters for improving accuracy of a lithium ion battery equivalent circuit model. Conventional methods for the parameter estimation directly using the curve fitting results generate the phenomenon to be incorrect due to the influence of the internal capacitive impedance. To solve this phenomenon, simple correction procedure with transient state analysis is proposed and added to the parameter estimation method. Furthermore, conventional dynamic equation for correction is enhanced with advanced RC impedance dynamic equation so that the proposed modeling results describe the battery dynamic characteristics more exactly. The improved accuracy of the battery model by the proposed modeling method is verified by single cell experiments compared to the other type of models.

• 한국전자파학회논문지
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• 제15권10호
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• pp.1005-1010
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• 2004

슬롯 결한 마이크로스트립라인-도파관 천이기에 대해 간략하지만 정확한 등가 회로 모델을 추출하기 위한 해석 방법을 제안한다. 이 등가회로는 이상적 변압기, 마이크로스트립 개방 스터브, 그리고 슬롯 중심에서 도파관 쪽과 급전선 쪽 반평면으로 바라보는 각각의 어드미턴스들로 구성된다. 관련된 회로 변수 값들은 가역 정리 (Reciprocity theorem), 푸리에 변환과 푸리에 급수(Fourier transform and series), 복소 전력 개념(Complex power concept), 파스발 정리(Parceval's theorem), 그리고 스펙트럼 영역 이미턴스 접근법(Spectral-domain immittance approach)에 의해 계산된다. 계산된 산란계수 값을 측정된 값과 비교하였으며 이들 사이의 상당한 일치도는 제안된 등가회로 모델의 간편성과 정확성을 뒷받침한다.

• 한국음향학회지
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• 제15권4호
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• pp.77-82
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• 1996

본 연구에서는 샌드위치형 압전 트랜스듀서의 등가 회로 모델을 규명하는 방법을 제시하였다. 공기중에서 실험적으로 측정한 트랜스듀서의 전기적 어드미턴스와 이론적으로 계산된 어드미턴스의 오차가 최소가 되도록 하는 비선형 최적화 문제를 풀어 등가 회로에 관련된 미지 상수를 규명하였다. 예제 트랜스듀서에 대해 제안된 방법을 적용하여 등가회로를 모델링하고, 수중에서의 송신 음압 감도(TVR) 및 수신 읍압 감도(RVS)을 예측하고 실험치와 비교하여 규명된 등가 회로 모델의 타당성을 검증하였다.

• 한국철도학회:학술대회논문집
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• 한국철도학회 1999년도 춘계학술대회 논문집
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• pp.328-335
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• 1999

Three phase full bridge rectifier has been used to obtain dc voltage from three phase ac voltage source. The rectifier system has drawbacks that power factor is low and power flow is unidirectional. Therefore, when dc voltage increases due to regeneration of power the dynamic resister for dissipation of regeneration power must be installed. But three phase PWM converter can be controlled to operate with unity power factor and bidirectional power flow. Therefore when the PWM converter is used as do supply system, the dissipating resistor is not necessary. On this thesis, in order to design a controller having good performance, the hee phase PWM converter is completely modeled by using circuit DQ-transformation and thus a general and simple instructive equivalent circuit is obtained; the inductor set becomes a second order gyrator-coupled system and three phase inverter becomes a transformer as well. Under given phase angle(${\alpha}$) and modulation index(MI) of the three phase inverter, the dc and ac characteristics are obtained by analysis of the transformed equivalent circuit The validity of the equivalent circuit is confirmed through PSPICE simulation. And based on the dc and ac characteristics a controller with unity power factor is proposed.

• Journal of electromagnetic engineering and science
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• 제15권1호
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• pp.26-30
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• 2015

In this paper, a simple equivalent circuit model for a defected ground structure (DGS) microstrip line with stepped impedance slot-lines in the ground plane is presented. In addition, an analytic expression for the resonance frequency of the proposed structure is derived. In equivalent circuit modeling, the capacitance and the inductance of the resonance circuit are evaluated from the dimensions of the etched pattern in the ground plane. The resonance frequencies calculated from the proposed method are compared with those obtained with an electromagnetic (EM) simulation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1506-1508
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• 2001

We have investigated for the modeling and the simulation of the ferroelectric capacitor and MFS TFT (Metal-Ferroelectric-Semiconductor Thin Film transistor). For ferroelectric capacitor modeling, we adopted the equivalent circuit model which consists of a nonlear capacitor, a nonliner resistor, and a linear capacitor. MFS TFT have been modeled by combining the ferroelectric capacitor and Bsim3 MOSFET model. Our simulations show the characteristics of ferroelectric capacitor and MFS TFT.