Equivalent Circuit Modeling and Characteristics Simulation of Ferroelectric Switching Devices

강유전성 스위칭 소자의 등가회로 모델과 특성 시뮬레이션

  • Kim, Jin-Hong (School of Electronics and Electrical Engineering Hongik University) ;
  • Hong, Sung-Jin (School of Electronics and Electrical Engineering Hongik University) ;
  • Choi, Jong-Sun (School of Electronics and Electrical Engineering Hongik University)
  • 김진홍 (홍익대학교 전자전기공학부) ;
  • 홍성진 (홍익대학교 전자전기공학부) ;
  • 최종선 (홍익대학교 전자전기공학부)
  • Published : 2001.07.18

Abstract

We have investigated for the modeling and the simulation of the ferroelectric capacitor and MFS TFT (Metal-Ferroelectric-Semiconductor Thin Film transistor). For ferroelectric capacitor modeling, we adopted the equivalent circuit model which consists of a nonlear capacitor, a nonliner resistor, and a linear capacitor. MFS TFT have been modeled by combining the ferroelectric capacitor and Bsim3 MOSFET model. Our simulations show the characteristics of ferroelectric capacitor and MFS TFT.

Keywords