Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2001.07c
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- Pages.1506-1508
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- 2001
Equivalent Circuit Modeling and Characteristics Simulation of Ferroelectric Switching Devices
강유전성 스위칭 소자의 등가회로 모델과 특성 시뮬레이션
- Kim, Jin-Hong (School of Electronics and Electrical Engineering Hongik University) ;
- Hong, Sung-Jin (School of Electronics and Electrical Engineering Hongik University) ;
- Choi, Jong-Sun (School of Electronics and Electrical Engineering Hongik University)
- Published : 2001.07.18
Abstract
We have investigated for the modeling and the simulation of the ferroelectric capacitor and MFS TFT (Metal-Ferroelectric-Semiconductor Thin Film transistor). For ferroelectric capacitor modeling, we adopted the equivalent circuit model which consists of a nonlear capacitor, a nonliner resistor, and a linear capacitor. MFS TFT have been modeled by combining the ferroelectric capacitor and Bsim3 MOSFET model. Our simulations show the characteristics of ferroelectric capacitor and MFS TFT.
Keywords