• 제목/요약/키워드: Engineering School

검색결과 60,415건 처리시간 0.079초

A suspension type spiral inductor for multi-GHz applications

  • Lee, J.Y.;J.H., Kim;Kim, M.J.;Moon, S.S.;Kim, I.H.;Lee, Y.H.;Yook, Jong-Gwan;Chun, Kuk-Jin
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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    • pp.47-48
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    • 2002
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Quantum Dot Optoelectronic Devices

  • P., Lever;K., Stewart;Q., Gao;L., Fu;J., Wong-Leung;M., Buda;H.H., Tan;C., Jagadish
    • 한국광학회:학술대회논문집
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    • 한국광학회 2004년도 하계학술발표회
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    • pp.4-5
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    • 2004
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알루미늄 희생층을 이용한 금속 구조물의 제작 (Fabrication of metal structure using AI sacrificial layer)

  • 김정무;박재형;이상호;신동식;김용권;이윤식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 C
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    • pp.1893-1895
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    • 2001
  • In this paper, novel release technique using wet etch is proposed. The results of this technique and the results of SAMs (Self-Assembled monolayers) coated after release using this technique are compared. Fabricated structure have 100 um in width and experimental length is from 100 um to 1 mm. Thickness of aluminum sacrificial layer is 2 um and structure thickness is 2.5 um. Cantilevers and bridges are fabricated with electroplated gold and silicon nitride deposited on substrate. An aluminium sacrificial layer was evaporated thermally and removed in various wet etching solutions. Detachment length of cantilever is 200 um and detachment length of bridge is 1 mm after isooctane rinsing. And the SAMs coating condition which is appropriate for gold and nitride are studied respectively.

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Dry etching of SiC in inductively coupled $SF_6/O_2$ Plasma

  • Yim, Jeong-Hyuk;Lee, Jong-Ho;Song, Ho-Keun;Moon, Jeong-Hyun;Seo, Han-Seok;Oh, Myeong-Sook;Lee, Jae-Bin;Kim, Hyeong-Joon
    • 한국결정학회:학술대회논문집
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    • 한국결정학회 2007년도 추계학술연구발표회 및 정기총회
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    • pp.47-47
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    • 2007
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