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Quantum Dot Optoelectronic Devices

  • P., Lever;K., Stewart;Q., Gao;L., Fu;J., Wong-Leung;M., Buda;H.H., Tan;C., Jagadish
    • Proceedings of the Optical Society of Korea Conference
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    • 2004.07a
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    • pp.4-5
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    • 2004
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Fabrication of metal structure using AI sacrificial layer (알루미늄 희생층을 이용한 금속 구조물의 제작)

  • Kim, Jung-Mu;Park, Jae-Hyoung;Lee, Sang-Ho;Sin, Dong-Sik;Kim, Yong-Kweon;Lee, Yoon-Sik
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1893-1895
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    • 2001
  • In this paper, novel release technique using wet etch is proposed. The results of this technique and the results of SAMs (Self-Assembled monolayers) coated after release using this technique are compared. Fabricated structure have 100 um in width and experimental length is from 100 um to 1 mm. Thickness of aluminum sacrificial layer is 2 um and structure thickness is 2.5 um. Cantilevers and bridges are fabricated with electroplated gold and silicon nitride deposited on substrate. An aluminium sacrificial layer was evaporated thermally and removed in various wet etching solutions. Detachment length of cantilever is 200 um and detachment length of bridge is 1 mm after isooctane rinsing. And the SAMs coating condition which is appropriate for gold and nitride are studied respectively.

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