• Journal of Radiation Protection and Research
• /
• 제17권1호
• /
• pp.1-10
• /
• 1992

물분자와 전리방사선과의 상호작용에 의하여 생성된 방사능극소입자에 관한 많은 연구결과가 보고되어 왔으며, 특히 이전 연구에서는 물분자의 방사성분해에 의해 발생한 수산화라디칼의 높은 농도는, 유기물기체와 같은 실내기체와 반응즉시 낮은 증기압의 화학물로 변하여 극소입자가 된다고 알려져 왔다. 본 연구에서는, 라돈의 첫째딸핵종인 Po-218에 대한 물분자와의 의존성을 조사할 목적으로, 실내기체의 최적제어가 가능한 라돈챔버를 사용하여 일련의 실험들을 수행하였다. 특별히 설계 제작된 평행등급 금속망필터시스템을 사용하여, 서로 다른 습도조건하에서 0.5-100nm 크기의 라돈딸핵종에 대한 방사능크기분포도가 얻어졌으며, 그 결과가 분석되었다. 라든가스챔버내에 수증기분자의 첨가와 동 수증기분자의 방사성분해에 의하여 생성된 수산화라디칼에 의한 극소입자들의 형성을 확인하였는데 이는 수증기의 방사성분해과정에서 Po-218이온과 수증기분자 사이에 중화과정 때문인 것으로 밝혀졌다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2009년도 춘계학술발표대회
• /
• pp.29.1-29.1
• /
• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• 한국재료학회지
• /
• 제24권7호
• /
• pp.375-380
• /
• 2014

Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.

• Molecules and Cells
• /
• 제37권11호
• /
• pp.767-776
• /
• 2014

Alzheimer's disease (AD) is clinically characterized with progressive memory loss and cognitive decline. Synaptic dysfunction is an early pathological feature that occurs prior to neurodegeneration and memory dysfunction. Mounting evidence suggests that aggregation of amyloid-${\alpha}$ ($A{\alpha}$) and hyperphosphorylated tau leads to synaptic deficits and neurodegeneration, thereby to memory loss. Among the established genetic risk factors for AD, the ${\varepsilon}4$ allele of apolipoprotein E (APOE) is the strongest genetic risk factor. We and others previously demonstrated that apoE regulates $A{\alpha}$ aggregation and clearance in an isoform-dependent manner. While the effect of apoE on $A{\alpha}$ may explain how apoE isoforms differentially affect AD pathogenesis, there are also other underexplored pathogenic mechanisms. They include differential effects of apoE on cerebral energy metabolism, neuroinflammation, neurovascular function, neurogenesis, and synaptic plasticity. ApoE is a major carrier of cholesterols that are required for neuronal activity and injury repair in the brain. Although there are a few conflicting findings and the underlying mechanism is still unclear, several lines of studies demonstrated that apoE4 leads to synaptic deficits and impairment in long-term potentiation, memory and cognition. In this review, we summarize current understanding of apoE function in the brain, with a particular emphasis on its role in synaptic plasticity and the underlying cellular and molecular mechanisms, involving low-density lipoprotein receptor-related protein 1 (LRP1), syndecan, and LRP8/ApoER2.

• 한국정보통신학회논문지
• /
• 제22권7호
• /
• pp.949-955
• /
• 2018

HIL 시뮬레이션은 복잡한 실시간 임베디드 시스템을 개발하고 테스트하는 데 사용되는 기법이다. HIL 테스트는 해양플랜트와 같은 고부가가치 선박인 LNGC의 PMS 성능 검증을 위한 효율적인 플랫폼이 된다. 그러나 국내 조선소를 비롯한 연구기관에서 스스로 HIL 테스트를 수행하기에는 시간이 필요하다. 이 문제를 해결하기 위해, 본 연구는 전력 공급 장치 / 소비 장치, 제어콘솔, MSBD 로 구성된 FPGA 기반의 PMS-HIL 시뮬레이터를 제안한다. 제안된 HIL시뮬레이션 플랫폼은 실제 장비 데이터를 사용하였고, PMS의 부하 공유 테스트를 수행하였다. 제안된 시스템은 대칭, 비대칭 및 고정 부하분배를 통해 검증하였고 공장수락시험 대체 가능성을 보여 준다. 또한 향후 에너지관리시스템 개발을 비롯한 선박 자동화 및 자율운항을 위한 추가 시스템 개발 시 많은 도움을 줄 것으로 사료된다.

• E2M - 전기 전자와 첨단 소재
• /
• 제10권7호
• /
• pp.692-699
• /
• 1997

The silicon doped $Al_{0.33}$G $a_{0.67}$As were grown by molecular beam epitaxy. The electroreflectance(ER) spectra of Schottky barrier Au/n-Al/suu x/G $a_{1-x}$ As have been measured at various modulation voltage( $V_{ac}$ ) and dc bias voltage( $V_{bias}$). From the observed Franz-Keldysh oscillations(FKO) peak, the band gap energy of the $Al_{x}$G $a_{1-x}$ As is 1.91 eV which corresponds to an Al composition of 33%. The internal electric field( $E_{i}$)of this sample is 2.96$\times$10$^{5}$ V/cm. As the modulation voltage( $V_{ac}$ ) is changed, the line shape of ER signal does not change but its amplitude varies linearly. The amplitude as a function of modulation voltage has saturated at 0.8 V. The internal electric field has decreased from 6.47$\times$10$^{5}$ V/cm to 2.00$\times$10$^{5}$ V/cm as the dc bias voltage( $V_{bias}$) increases from -3.5 V to +0.8 V. The values of built-in voltage( $V_{bi}$ ) and carrier concentration(N) determined from the plot of $V_{bias}$ from the plot of $V_{bias}$ versus $E_{i}$$^{2}$ are 0.855 V and 3.83$\times$10$^{17}$ c $m^{-3}$ , respectively.ively.y.y.y.

• 한국전기전자재료학회논문지
• /
• 제24권9호
• /
• pp.755-759
• /
• 2011

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.

• 센서학회지
• /
• 제17권6호
• /
• pp.437-446
• /
• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• 센서학회지
• /
• 제5권5호
• /
• pp.1-10
• /
• 1996

EFG Si 태양전지를 전류-전압, 표면광전압, 전자빔유도_전류, 전자미세프로브, 전자역산란의 여러 가지 기술을 이용하여 분석하였다. 전류-전압 그래프를 여러 온도에서 측정한 결과 EFG-Si 태양전지는 전압에 따라 변하는 shunt 저항을 가진 것이 밝혀졌다. 이러한 shunt 저항은 precipitate와 grain boundary에 의해 생긴 것으로 공간전하영역 내의 불순물 에너지 준위로 tunneling에 의해 이동한 캐리어의 재결합으로 일어난 결과이다. 전류-전압 과 표면광전압 기술을 결합하면 태양전지의 pn접합과 기판 (substrate)을 동시에 분석할 수 있다. Diode ideality factor와 표면 광전압은 Pn접합의 특성을, 소수캐리어 확산거리는 substrate특성을 표시한다. EFG 태양 전지를 분석한 결과, 전압에 따라 변하는 shunt 저항은 효율에 따라 정도 차이는 있지만 모든 시편에서 발견되며, 태양전지의 성능을 저하시키는 중요한 원인 중의 하나가 된다.

• 한국전기전자재료학회논문지
• /
• 제22권10호
• /
• pp.814-820
• /
• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.