• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.272-277
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• 1995

We report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, AlGaN/GaN double heterostructure (DH) and AlGaN/GaInN DH which prepared on a sapphire substrate using an AIN buffer-layer by the nietalorganic vapor phase epitaxy (MOVPE) method. The peak wavelength of the stimulated emission at RT from AIGaN/GaN DH is 369nm and the threshold of excitation pumping power density (P$\_$th/) is about 84kW/cm$\^$2/, and they from AlGaN/GaInN DH are 402nm and 130kW/cm$\^$2/ at the pumping power density of 200kW/cm$\^$2/, respectively. The P$\_$th/ of AIGaN/GaN and AlGaN/GaInN DHs are lower than the single layers of GaN and GaInN due to optical confinement within the active layers of GaN and GaInN, respectively.

• Current Optics and Photonics
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• 제3권3호
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• pp.248-255
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• 2019

Spherical $CeO_2:Ho^{3+}/Yb^{3+}$ particles were synthesized using spray pyrolysis, and the upconversion (UC) properties were investigated with changing the preparation conditions and the infrared pumping power. The resulting particles had a size of about $1{\mu}m$ and hollow structure. The prepared $CeO_2:Ho^{3+}/Yb^{3+}$ particles exhibited intense green emission due to the $^5F_4/^5S_2{\rightarrow}^5I_8$ transition of $Ho^{3+}$ and showed weak red or near-IR peaks. In terms of achieving the highest UC emission, the optimal concentrations of $Ho^{3+}$ and $Yb^{3+}$ were 0.3% and 2.0%, respectively. The UC emission intensity of prepared $CeO_2:Ho^{3+}/Yb^{3+}$ particles had a linear relationship with crystallite size and concentration quenching was caused by dipole-dipole interaction between the same ions. Based on the dependency of UC emission on the pumping power, the observed green upconversion was achieved through a typical two-photon process and concluded that the main energy transfer from $Yb^{3+}$ to $Ho^{3+}$ was involved in the ground-state adsorption (GSA) process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.126-126
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• 2009

Noninvasive plasma diagnostic technique is introduced to analyze and characterize HICP (Helmholtz Inductively Coupled Plasma) source during the plasma etching process. The HICP reactor generates plasma mainly through RF source power at 13.56MHz RF power and RF bias power of 12.56MHz is applied to the cathode to independently control ion density and ion energy. For noninvasive sensors, the RF sensor and the OES (Optical emission spectroscopy) were employed since it is possible to obtain both physical and chemical properties of the reactor with plasma etching. The plasma impedance and optical spectra were observed while altering process parameters such as pressure, gas flow, source and bias power during the poly silicon etching process. In this experiment, we have found that data measured from these noninvasive sensors can be correlated to etch results. In this paper, we discuss the relationship between process parameters and the measurement data from RF sensor and OES such as plasma impedance and optical spectra and using these relationships to analyze and characterize H-ICP source.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.74-74
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• 2010

The aqua-plasma is the non-thermal plasma in electrical conductive electrolyte by generates the vapor film layer on the immersed metal electrode surface. This plasma can generate the hydroxyl radical by dissociate the water molecule with the plasma electron. To develop the plasma discharge device for high efficiency in the hydroxyl radical generation, proper model for estimation of plasma power is necessary. In this work, the 1-D spherical model was developed, considering temperature dependence material constants. The relation between the plasma power and hydroxyl generation was also studied by the comparison between the optical emission intensity from the hydroxyl radical using monochromator and estimated plasma power. First, the thickness of vapor layer thickness was estimated using the Navier-Stokes fluid equation in order to calculate the discharge E-field inside vapor layer. Using the E-field magnitude and power balance on the plasma generation, it was possible to estimate the plasma power. The plasma power was assumed to uniformly fill the vapor layer and the temperature of vapor layer was fixed in the boiling temperature of electrolyte, 375K. In the experiment, the aqua-plasma was discharged in the saline by applied the voltage on the bipolar electrode. The range of applied voltage was 234 to 280V-rms in the frequency of 380 kHz. Two type electrodes were produced with two ${\Phi}0.2$ tungsten. The plasma power was estimated from the V-I signal from the two high voltage probes and current probe. The estimated plasma power agreed with the profile of emission intensity when the plasma discharged between the metal electrode and vapor layer surface. However, when the plasma discharged between the metal electrodes, the increasing rate of emission intensity was lower than the increase of plasma power. It implies that the surface reaction is more sufficient rather than the volume reaction in the radical generation, due to the high density of water molecule in the liquid.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.560-566
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• 2004

In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of －100V∼＋100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2004년도 학술대회 논문집
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• pp.145-150
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• 2004

The LED lighting used spot-light illuminate the limited surface. So it is a key-point to condense wide emission angle of high power light emitting diodes (LEDs) to narrow that angle. In this paper, the secondary optics was designed by lens-makers formula for concentration rays of LED into specific region. So, it simulated the optics that designed by lens makers-formula in the optical design program, LightTools. And then, show the p propriety of lens design utilizing simulation result, luminous intensity, emission angle.

• Transactions on Electrical and Electronic Materials
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• 제9권1호
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• pp.20-23
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• 2008

Organic light-emitting diodes (OLEDs) are attractive because of possible application in display with low-operating voltage, low-power consumption, self-emission and capability of multicolor emission by the selection of emissive materials. To investigated the optical effects, we studied the electrical and optical characteristics due to thickness variation of electron injection materials LiF on organic light-emitting diodes in the ITO (indium-tin-oxide)/N,N'-diphenyl-N, N'-bis(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline) aluminum $(Alq_3)/LiF$ layer/Al device. We maintained the thicknesses of TPD and $Alq_3$ layers at 40 nm and 60 nm, respectively. The deposition rates of TPD and $Alq_3$ were in the $1.5{\AA}/s$ under a base pressure of $5{\times}10^{-6}$ Torr. It was found that luminance and luminous efficiency of the device with 0.7 nm LiF layer improve 25 times and 7 times than the device without the LiF layer, respectively.

• 한국통신학회논문지
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• 제25권9B호
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• pp.1518-1526
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• 2000

본 논문은 기존 표준 단일모드 광섬유 링크를 통하여 초고속 광신호의 장거리 전송이 가능하도록 분산보상 광섬유를 이용한 최적 분산보상 기법에 기반을 둔 전송링크 설계 방법을 제안하였다. 제안한 방법에서는 광섬유의 비선형성에서 비롯되는 자기위상변조(Self-Phase Modulation: SPM)와 광증폭기에서 발생하는 증폭자연방출(Amplified Spontaneous Emission : ASE) 잡음에 대하여 증폭기간 거리와 중계기간 거리를 최적화함으로써 전송신호 속도에 따른 최대 전송거리를 제시하였다. 또한 주어진 증폭기간 거리와 중계기간 거리에 대하여 ASE 잡음과 SPM의 효과의 균형적 관계로부터 최적의 입력 신호전력의 범위가 있음을 제시하였다.

• 한국재료학회지
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• 제26권1호
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• pp.29-34
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• 2016

$NaLa_{1-x}{(MoO_4)}_2$:$Ho^{3+}/Yb^{3+}$ phosphors with the correct doping concentrations of $Ho^{3+}$ and $Yb^{3+}$ ($x=Ho^{3+}+Yb^{3+}$, $Ho^{3+}=0.05$ and $Yb^{3+}=0.35$, 0.40, 0.45 and 0.50) were successfully synthesized by the microwave-modified sol-gel method. Well-crystallized particles formed after heat-treatment at $900^{\circ}C$ for 16 h showed a fine and homogeneous morphology with particle sizes of $3-5{\mu}m$. The optical properties were examined using photoluminescence emission and Raman spectroscopy. Under excitation at 980 nm, the UC intensities of the doped samples exhibited strong yellow emissions based on the combination of strong emission bands at 545-nm and 655-nm emission bands in green and red spectral regions, respectively. The strong 545-nm emission band in the green region corresponds to the $^5S_2/^5F_4{\rightarrow}^5I_8$ transition in $Ho^{3+}$ ions, while the strong emission 655-nm band in the red region appears due to the $^5F_5{\rightarrow}^5I_8$ transition in $Ho^{3+}$ ions. Pump power dependence and Commission Internationale de L'Eclairage chromaticity of the upconversion emission intensity were evaluated in detail.

• Journal of the Optical Society of Korea
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• 제2권2호
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• pp.50-53
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• 1998

We report on the spectroscopic investigation of optical-field ionized plasmas in the soft X-ray spectral region. The experiment was carried out by focusing pulses of the high-power Ti:Sapphire laser with an energy of ~ 40 mJ and time duration of ~30 fs into a gas jet of krypton, xenon, and argon from a pulsed nozzle. Strong soft X-ray emission on lines from ionic stages of $Kr^{7+} , Kr^{8+} , Xe^{7+} , Ar^{7+} , and Ar^{8+}$ is reported. The experimental result was found to be in good agreement with theoretical prediction.