• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.27-28
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• 2008

We have studied an organic layer-thickness dependent electrical and optical properties of organic light-emitting diodes in a device structure of ITO/TPD/$Alq_3$/LiF/Al. While a hole-transport layer thickness of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. Current-voltage-luminance characteristics of the devices show that there are typical rectifying behaviors, and the luminance reaches about $30,000cd/m^2$. Thickness-dependent current efficiency shows that there is a gradual increase of the efficiency as the total layer thickness increases. The efficiency becomes saturated to be about 10cd/A when the total thickness is above 140nm. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.489-493
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• 2012

Green phosphors $K_2BaW_2O_8:Tb^{3+}$(1.0 mol%) were synthesized by solid state reaction method. Differential thermal analysis was applied to trace the reaction processes. Three endothermic values of 95, 706, and $1055^{\circ}C$ correspond to the loss of absorbed water, the release of carbon dioxide, and the beginning of the melting point, respectively. The phase purity of the powders was examined using powder X-ray diffraction(XRD). Two strong excitation bands in the wavelength region of 200-310 nm were found to be due to the ${WO_4}^{2-}$ exciton transition and the 4f-5d transition of $Tb^{3+}$ in $K_2BaW_2O_8$. The excitation spectrum presents several lines in the range of 310-380 nm; these are assigned to the 4f-4f transitions of the $Tb^{3+}$ ion. The strong emission line at around 550 nm, due to the $^5D_4{\rightarrow}^7F_5$ transition, is observed together with weak lines of the $^5D_4{\rightarrow}^7F_J$(J = 3, 4, and 6) transitions. A broad emission band peaking at 530 nm is observed at 10 K, while it disappears at room temperature. The decay times of $Tb^{3+}$ $^5D_4{\rightarrow}^7F_5$ emission are estimated to be 4.8 and 1.4 ms, respectively, at 10 and 295 K; those of the ${WO_4}^{2-}$ exciton emissions are 22 and 0.92 ${\mu}s$ at 10 and 200 K, respectively.

• Korean Journal of Materials Research
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• v.22 no.3
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• pp.145-149
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• 2012

Red phosphors of $Gd_{1-x}Al_3(BO_3)_4:{Eu_x}^{3+}$ were synthesized by using the solid-state reaction method. The phase structure and morphology of the phosphors were measured using X-ray diffraction (XRD) and field emission-scanning electron microscopy (FE-SEM), respectively. The optical properties of $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors with concentrations of $Eu^{3+}$ ions of 0, 0.05, 0.10, 0.15, and 0.20 mol were investigated at room temperature. The crystals were hexagonal with a rhombohedral lattice. The excitation spectra of all the phosphors, irrespective of the $Eu^{3+}$ concentrations, were composed of a broad band centered at 265 nm and a narrow band having peak at 274 nm. As for the emission spectra, the peak wavelength was 613 nm under a 274 nm ultraviolet excitation. The intensity ratio of the red emission transition ($^5D_0{\rightarrow}^7F_2$) to orange ($^5D_0{\rightarrow}^7F_1$) shows that the $Eu^{3+}$ ions occupy sites of no inversion symmetry in the host. In conclusion, the optimum doping concentration of $Eu^{3+}$ ions for preparing $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors was found to be 0.15 mol.

• Bulletin of the Korean Space Science Society
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• 2011.04a
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• pp.20.1-20.1
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• 2011

We present the results of far-ultraviolet (FUV) observations of comet C/2001 Q4 (NEAT) obtained with Far-ultraviolet Imaging Spectrograph (FIMS) on board the Korean microsatellite STSAT-1, which operated at an altitude of 700 km in a sun-synchronous orbit. FIMS is a dual-channel imaging spectrograph (S channel 900-1150 ${\AA}$, L channel 1350-1750 ${\AA}$, ${\lambda}/{\Box}{\lambda}$ ~ 550) with large image fields of view (S: $4^{\circ}.0{\times}4'.6$, L: $7^{\circ}.5{\times}4'.3$, angular resolution 5'-10') optimized for the observation of diffuse emission of astrophysical radiation. Comet C/2001 Q4 (NEAT) was observed with a scanning survey mode when it was located around the perihelion between 8 and 15 May 2004. Several important emission lines were detected including S I (1425, 1474 ${\AA}$), C I (1561, 1657 ${\AA}$) and several emission lines of CO $A1{\cap}-X1{\sum}+$ system in the L channel. We estimated QCO = ($2.58\;{\pm}\;0.64)\;{\times}\;1028$ s-1 from the production rate of CO 1510 ${\AA}$. We obtained L-channel image which have map size of $5^{\circ}{\times}5^{\circ}$. The image was constructed for the wavelength band of L-channel (1350-1750 ${\AA}$).We also obtained radial profile of S I, C I, CO with line fitting from central coma.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• Applied Biological Chemistry
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• v.51 no.4
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• pp.276-280
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• 2008

To elucidate the effects of ultraviolet (UV) irradiation on molecular properties of ovalbumin, the molecular weight profile, secondary structure and tertiary structure of proteins were examined after irradiation by UV with 254 nm wavelength for 4, 8, 16 and 32 hrs, respectively. UV irradiation of protein solution caused the disruption on the native state of protein molecules. SDS-PAGE and gel permeation chromatography indicated that radiation caused initial fragmentation of polypeptide chains and as a result subsequent aggregation due to cross-linking of protein molecules. Circular dichroism (CD) study showed that UV irradiation caused the change on the secondary structure resulting in decrease of helical structure or compact denature on structure of protein depending on irradiation period. Fluorescence spectroscopy indicated that irradiation quenched the emission intensity excited at 280 nm. These results suggest that UV irradiation affect the molecular properties of ovalbumin and may have potential as a means to change the antigenicity of protein allergen.

• Advances in nano research
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• v.5 no.3
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• Journal of The Korean Astronomical Society
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• v.48 no.5
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• pp.257-265
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• 2015

We present results of long-term multi-wavelength polarization observations of the powerful blazar 3C 279 after its γ-ray flare on 2013 December 20. We followed up this flare with single-dish polarization observations using two 21-m telescopes of the Korean VLBI Network. Observations carried out weekly from 2013 December 25 to 2015 January 11, at 22 GHz, 43 GHz, 86 GHz simultaneously, as part of the Monitoring Of GAmma-ray Bright AGN (MOGABA) program. We measured 3C 279 total flux densities of 22–34 Jy at 22 GHz, 15–28 Jy (43 GHz), and 10–21 Jy (86 GHz), showing mild variability of ≤ 50 % over the period of our observations. The spectral index between 22 GHz and 86 GHz ranged from −0.13 to −0.36. Linear polarization angles were 27°–38°, 30°–42°, and 33°–50° at 22 GHz, 43 GHz, and 86 GHz, respectively. The degree of linear polarization was in the range of 6–12 %, and slightly decreased with time at all frequencies. We investigated Faraday rotation and depolarization of the polarized emission at 22–86 GHz, and found Faraday rotation measures (RM) of −300 to −1200 rad m⁻² between 22 GHz and 43 GHz, and −800 to −5100 rad m⁻² between 43 GHz and 86 GHz. The RM values follow a power law with a mean power law index a of 2.2, implying that the polarized emission at these frequencies travels through a Faraday screen in or near the jet. We conclude that the regions emitting polarized radio emission may be different from the region responsible for the 2013 December γ-ray flare and are maintained by the dominant magnetic field perpendicular to the direction of the radio jet at milliarcsecond scales.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.219-223
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• 1998

Spectroscopic properties of $Eu^{3+}$, $Sm^{3+}$, $Tb^{3+}$ ions in silicate glasses have been studied. The absorption and emission properties were investigated with the wavelength and rare-earth element concentration. The results showed that the emission spectrum of $Sm^{3+}$ was a transition from $^{5}D_{o}$ excited level to ^{7}F$ ground state and $Sm^{3+}$ was from $4F_{5/2}$ to $^{6}H$ and $Tb^{3+}$ was from $^{5}D_{4}$ to ^{7}F$ The emission intensity was linearly increased with rare-earth element concentrations up to 10wt%.

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.192-197
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• 2014

Red-emitting nitride phosphors recently attracted considerable attention because of their high thermal stability and high color rendering index properties. For excellent phosphor of white light-emitting-diode, ternary nitride phosphor of $Sr/SmSi_5N_8:Eu^{2+}$ with different $Eu^{2+}$ ion concentration were synthesized by solid state reaction method. In this work, red-emitting nitride $Sr/SmSi_5N_8:Eu^{2+}$ phosphor was successfully synthesized by using multi-step high frequency induction heat treatment. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Sr/SmSi_5N_8:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Sr/SmSi_5N_8:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 300 - 550 nm, namely from UV to visible area with distinct enhanced emission peaks. With an increase of $Eu^{2+}$ ion concentration, the peak position of emission in spectra was red-shifted from 613 to 671 nm. After via multi-step heat treatment, prepared phosphor showed excellent luminescence properties, such as high emission intensity and low thermal quenching, better than commercial phosphor of $Y_3Al_5O_{12}:Ce^{3+}$. Using $Eu_2O_3$ as a raw material for $Eu^{2+}$ dopant with nitrogen gas flowing instead of using commercial EuN chemical for $Sr/SmSi_5N_8:Eu^{2+}$ synthesis is one of characteristic of this work.